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InP-Based Photodetectors Monolithically Integrated with 90° Hybrid toward Over 400Gb/s Coherent Transmission Systems
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We present InP-based photodetectors monolithically integrated with a 90° hybrid toward over 400Gb/s coherent transmission systems. To attain a wide 3-dB bandwidth of more than 40GHz for 400Gb/s dual-polarization (DP)-16-ary quadrature amplitude modulation (16QAM) and 600Gb/s DP-64QAM through 64GBaud operation, A p-i-n photodiode structure consisting of a GaInAs thin absorption and low doping n-typed InP buffer layers was introduced to overcome the trade-off between short carrier transit time and low parasitic capacitance. Additionally, this InP buffer layer contributes to the reduction of propagation loss in the 90° hybrid waveguide, that is, this approach allows a high responsivity as well as wide 3-dB bandwidth operation. The coherent receiver module for the C-band (1530nm - 1570nm) operation indicated the wide 3-dB bandwidth of more than 40GHz and the high receiver responsivity of more than 0.070A/W (Chip responsivity within the C-band: 0.130A/W) thanks to photodetectors with this photodiode design. To expand the usable wavelengths in wavelength-division multiplexing toward large-capacity optical transmission, the photodetector integrated with the 90° hybrid optimized for the L-band (1565nm - 1612nm) operation was also fabricated, and exhibited the high responsivity of more than 0.120A/W over the L-band. Finally, the InP-based monolithically integrated photonic device consisting of eight-channel p-i-n photodiodes, two 90° hybrids and a beam splitter was realized for the miniaturization of modules and afforded the reduction of the total footprint by 70% in a module compared to photodetectors with the 90° hybrid and four-channel p-i-n photodiodes.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E102-C No.4 pp.347-356
- Publication Date
- 2019/04/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.2018ODI0006
- Type of Manuscript
- Special Section INVITED PAPER (Special Section on Progress in Optical Device Technology for Increasing Data Transmission Capacity)
- Category
Authors
Hideki YAGI
Sumitomo Electric Industries, Ltd.
Takuya OKIMOTO
Sumitomo Electric Device Innovations, Inc.
Naoko INOUE
Sumitomo Electric Industries, Ltd.
Koji EBIHARA
Sumitomo Electric Device Innovations, Inc.
Kenji SAKURAI
Sumitomo Electric Device Innovations, Inc.
Munetaka KUROKAWA
Sumitomo Electric Industries, Ltd.
Satoru OKAMOTO
Sumitomo Electric Device Innovations, Inc.
Kazuhiko HORINO
Sumitomo Electric Device Innovations, Inc.
Tatsuya TAKEUCHI
Sumitomo Electric Device Innovations, Inc.
Kouichiro YAMAZAKI
Sumitomo Electric Device Innovations, Inc.
Yoshifumi NISHIMOTO
Sumitomo Electric Device Innovations, Inc.
Yasuo YAMASAKI
Sumitomo Electric Device Innovations, Inc.
Mitsuru EKAWA
Sumitomo Electric Industries, Ltd.,Sumitomo Electric Device Innovations, Inc.
Masaru TAKECHI
Sumitomo Electric Industries, Ltd.
Yoshihiro YONEDA
Sumitomo Electric Device Innovations, Inc.
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Hideki YAGI, Takuya OKIMOTO, Naoko INOUE, Koji EBIHARA, Kenji SAKURAI, Munetaka KUROKAWA, Satoru OKAMOTO, Kazuhiko HORINO, Tatsuya TAKEUCHI, Kouichiro YAMAZAKI, Yoshifumi NISHIMOTO, Yasuo YAMASAKI, Mitsuru EKAWA, Masaru TAKECHI, Yoshihiro YONEDA, "InP-Based Photodetectors Monolithically Integrated with 90° Hybrid toward Over 400Gb/s Coherent Transmission Systems" in IEICE TRANSACTIONS on Electronics,
vol. E102-C, no. 4, pp. 347-356, April 2019, doi: 10.1587/transele.2018ODI0006.
Abstract: We present InP-based photodetectors monolithically integrated with a 90° hybrid toward over 400Gb/s coherent transmission systems. To attain a wide 3-dB bandwidth of more than 40GHz for 400Gb/s dual-polarization (DP)-16-ary quadrature amplitude modulation (16QAM) and 600Gb/s DP-64QAM through 64GBaud operation, A p-i-n photodiode structure consisting of a GaInAs thin absorption and low doping n-typed InP buffer layers was introduced to overcome the trade-off between short carrier transit time and low parasitic capacitance. Additionally, this InP buffer layer contributes to the reduction of propagation loss in the 90° hybrid waveguide, that is, this approach allows a high responsivity as well as wide 3-dB bandwidth operation. The coherent receiver module for the C-band (1530nm - 1570nm) operation indicated the wide 3-dB bandwidth of more than 40GHz and the high receiver responsivity of more than 0.070A/W (Chip responsivity within the C-band: 0.130A/W) thanks to photodetectors with this photodiode design. To expand the usable wavelengths in wavelength-division multiplexing toward large-capacity optical transmission, the photodetector integrated with the 90° hybrid optimized for the L-band (1565nm - 1612nm) operation was also fabricated, and exhibited the high responsivity of more than 0.120A/W over the L-band. Finally, the InP-based monolithically integrated photonic device consisting of eight-channel p-i-n photodiodes, two 90° hybrids and a beam splitter was realized for the miniaturization of modules and afforded the reduction of the total footprint by 70% in a module compared to photodetectors with the 90° hybrid and four-channel p-i-n photodiodes.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2018ODI0006/_p
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@ARTICLE{e102-c_4_347,
author={Hideki YAGI, Takuya OKIMOTO, Naoko INOUE, Koji EBIHARA, Kenji SAKURAI, Munetaka KUROKAWA, Satoru OKAMOTO, Kazuhiko HORINO, Tatsuya TAKEUCHI, Kouichiro YAMAZAKI, Yoshifumi NISHIMOTO, Yasuo YAMASAKI, Mitsuru EKAWA, Masaru TAKECHI, Yoshihiro YONEDA, },
journal={IEICE TRANSACTIONS on Electronics},
title={InP-Based Photodetectors Monolithically Integrated with 90° Hybrid toward Over 400Gb/s Coherent Transmission Systems},
year={2019},
volume={E102-C},
number={4},
pages={347-356},
abstract={We present InP-based photodetectors monolithically integrated with a 90° hybrid toward over 400Gb/s coherent transmission systems. To attain a wide 3-dB bandwidth of more than 40GHz for 400Gb/s dual-polarization (DP)-16-ary quadrature amplitude modulation (16QAM) and 600Gb/s DP-64QAM through 64GBaud operation, A p-i-n photodiode structure consisting of a GaInAs thin absorption and low doping n-typed InP buffer layers was introduced to overcome the trade-off between short carrier transit time and low parasitic capacitance. Additionally, this InP buffer layer contributes to the reduction of propagation loss in the 90° hybrid waveguide, that is, this approach allows a high responsivity as well as wide 3-dB bandwidth operation. The coherent receiver module for the C-band (1530nm - 1570nm) operation indicated the wide 3-dB bandwidth of more than 40GHz and the high receiver responsivity of more than 0.070A/W (Chip responsivity within the C-band: 0.130A/W) thanks to photodetectors with this photodiode design. To expand the usable wavelengths in wavelength-division multiplexing toward large-capacity optical transmission, the photodetector integrated with the 90° hybrid optimized for the L-band (1565nm - 1612nm) operation was also fabricated, and exhibited the high responsivity of more than 0.120A/W over the L-band. Finally, the InP-based monolithically integrated photonic device consisting of eight-channel p-i-n photodiodes, two 90° hybrids and a beam splitter was realized for the miniaturization of modules and afforded the reduction of the total footprint by 70% in a module compared to photodetectors with the 90° hybrid and four-channel p-i-n photodiodes.},
keywords={},
doi={10.1587/transele.2018ODI0006},
ISSN={1745-1353},
month={April},}
Copy
TY - JOUR
TI - InP-Based Photodetectors Monolithically Integrated with 90° Hybrid toward Over 400Gb/s Coherent Transmission Systems
T2 - IEICE TRANSACTIONS on Electronics
SP - 347
EP - 356
AU - Hideki YAGI
AU - Takuya OKIMOTO
AU - Naoko INOUE
AU - Koji EBIHARA
AU - Kenji SAKURAI
AU - Munetaka KUROKAWA
AU - Satoru OKAMOTO
AU - Kazuhiko HORINO
AU - Tatsuya TAKEUCHI
AU - Kouichiro YAMAZAKI
AU - Yoshifumi NISHIMOTO
AU - Yasuo YAMASAKI
AU - Mitsuru EKAWA
AU - Masaru TAKECHI
AU - Yoshihiro YONEDA
PY - 2019
DO - 10.1587/transele.2018ODI0006
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E102-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 2019
AB - We present InP-based photodetectors monolithically integrated with a 90° hybrid toward over 400Gb/s coherent transmission systems. To attain a wide 3-dB bandwidth of more than 40GHz for 400Gb/s dual-polarization (DP)-16-ary quadrature amplitude modulation (16QAM) and 600Gb/s DP-64QAM through 64GBaud operation, A p-i-n photodiode structure consisting of a GaInAs thin absorption and low doping n-typed InP buffer layers was introduced to overcome the trade-off between short carrier transit time and low parasitic capacitance. Additionally, this InP buffer layer contributes to the reduction of propagation loss in the 90° hybrid waveguide, that is, this approach allows a high responsivity as well as wide 3-dB bandwidth operation. The coherent receiver module for the C-band (1530nm - 1570nm) operation indicated the wide 3-dB bandwidth of more than 40GHz and the high receiver responsivity of more than 0.070A/W (Chip responsivity within the C-band: 0.130A/W) thanks to photodetectors with this photodiode design. To expand the usable wavelengths in wavelength-division multiplexing toward large-capacity optical transmission, the photodetector integrated with the 90° hybrid optimized for the L-band (1565nm - 1612nm) operation was also fabricated, and exhibited the high responsivity of more than 0.120A/W over the L-band. Finally, the InP-based monolithically integrated photonic device consisting of eight-channel p-i-n photodiodes, two 90° hybrids and a beam splitter was realized for the miniaturization of modules and afforded the reduction of the total footprint by 70% in a module compared to photodetectors with the 90° hybrid and four-channel p-i-n photodiodes.
ER -
English
