We report, in this paper, on a combined process of photo-oxidation and PECVD using TEOS and O2 gases to produce an SiO2 gate insulator for poly-Si TFTs. Light of 172 nm-wavelength from a Xe excimer lamp generates active oxygen radicals efficiently and selectively without producing ozone. These oxygen radicals efficiently oxidize silicon. In contrast to plasma oxidation, photo-oxidation offers the ability to produce gate oxides without ion bombardment. Oxide-silicon interfaces with interface trap densities of 2-3 1010 cm-2 eV-1 were obtained by photo-oxidation at 200-300. A stack structure was produced using 4.3-nm-thick photo-oxide topped with a 40-nm-thick PECVD oxide film deposited at 300. This stack structure without annealing exhibited excellent interface behavior and the same J-E characteristics as a 100-nm-thick PECVD film annealed at 600.

The authors have proposed a 1 m2 single-layer slotted waveguide array consisting of conducting baffles and quartz glass strips positioned in front of the slot aperture, which is referred to as a vacuum window, for microwave plasma excitation. The effect of the complicated outer vacuum window hinders the realization of uniform distribution. In this paper, a unit-cell of the alternating-phase fed single-layer slotted waveguide array with the vacuum window is analyzed by generalized scattering matrix method (GSM)-method of moments (MoM) hybridization analysis, and the array is designed to realize uniform aperture electromagnetic field distribution, where the plasma and the chamber is neglected. The GSM-MoM analysis gives reliable numerical results while the MoM has numerical errors due to singularities of Green's function for a long cavity. Uniform aperture EM field distribution outside of the vacuum window is observed in near field measurements using a 1/5 scale model antenna, and the validity of the analysis and design is verified.