1-2hit |
Gil Sung LEE Doo-Hyun KIM Seongjae CHO Byung-Gook PARK
We propose a new cone-type DRAM cell as a 1T DRAM cell. The superiority of cone shape is already reported, in that the electric field concentration effect encourages impact ionization phenomenon. So the device has improved DRAM characteristics compared with cylinder type 1T DRAM Cell (SGVC Cell). To confirm the memory operation of the cone-type DRAM cell, simulation works were carried out. Also, retention characteristic shows the device can be used practically.
Woojun LEE Kwangsoo KIM Woo Young CHOI
A novel one-transistor dynamic random access memory (1T DRAM) cell has been proposed for a low-voltage operation and longer data retention time. The proposed 1T DRAM cell has three features compared with a conventional 1T DRAM cell: low body doping concentration, a recessed gate structure, and a P + poly-Si gate. Simulation results show that the proposed 1T DRAM cell has < 1-ns program time and > 100-ms data retention time under the condition of sub-1-V operating voltage.