A New 1T DRAM Cell: Cone Type 1T DRAM Cell
Summary :
We propose a new cone-type DRAM cell as a 1T DRAM cell. The superiority of cone shape is already reported, in that the electric field concentration effect encourages impact ionization phenomenon. So the device has improved DRAM characteristics compared with cylinder type 1T DRAM Cell (SGVC Cell). To confirm the memory operation of the cone-type DRAM cell, simulation works were carried out. Also, retention characteristic shows the device can be used practically.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E94-C No.5 pp.681-685
- Publication Date
- 2011/05/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E94.C.681
- Type of Manuscript
- Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
- Category
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Gil Sung LEE, Doo-Hyun KIM, Seongjae CHO, Byung-Gook PARK, "A New 1T DRAM Cell: Cone Type 1T DRAM Cell" in IEICE TRANSACTIONS on Electronics,
vol. E94-C, no. 5, pp. 681-685, May 2011, doi: 10.1587/transele.E94.C.681.
Abstract: We propose a new cone-type DRAM cell as a 1T DRAM cell. The superiority of cone shape is already reported, in that the electric field concentration effect encourages impact ionization phenomenon. So the device has improved DRAM characteristics compared with cylinder type 1T DRAM Cell (SGVC Cell). To confirm the memory operation of the cone-type DRAM cell, simulation works were carried out. Also, retention characteristic shows the device can be used practically.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E94.C.681/_p
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@ARTICLE{e94-c_5_681,
author={Gil Sung LEE, Doo-Hyun KIM, Seongjae CHO, Byung-Gook PARK, },
journal={IEICE TRANSACTIONS on Electronics},
title={A New 1T DRAM Cell: Cone Type 1T DRAM Cell},
year={2011},
volume={E94-C},
number={5},
pages={681-685},
abstract={We propose a new cone-type DRAM cell as a 1T DRAM cell. The superiority of cone shape is already reported, in that the electric field concentration effect encourages impact ionization phenomenon. So the device has improved DRAM characteristics compared with cylinder type 1T DRAM Cell (SGVC Cell). To confirm the memory operation of the cone-type DRAM cell, simulation works were carried out. Also, retention characteristic shows the device can be used practically.},
keywords={},
doi={10.1587/transele.E94.C.681},
ISSN={1745-1353},
month={May},}
Copy
TY - JOUR
TI - A New 1T DRAM Cell: Cone Type 1T DRAM Cell
T2 - IEICE TRANSACTIONS on Electronics
SP - 681
EP - 685
AU - Gil Sung LEE
AU - Doo-Hyun KIM
AU - Seongjae CHO
AU - Byung-Gook PARK
PY - 2011
DO - 10.1587/transele.E94.C.681
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E94-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2011
AB - We propose a new cone-type DRAM cell as a 1T DRAM cell. The superiority of cone shape is already reported, in that the electric field concentration effect encourages impact ionization phenomenon. So the device has improved DRAM characteristics compared with cylinder type 1T DRAM Cell (SGVC Cell). To confirm the memory operation of the cone-type DRAM cell, simulation works were carried out. Also, retention characteristic shows the device can be used practically.
ER -
English
