A feed-forward (FF) BiNMOS driver that combines a multi-stage CMOS inverter and a bipolar emitter-follower transistor is proposed as a low-voltage BiCMOS driver. High-speed and low-voltage operation is made possible by a multi-stage inverter and feed-forward control from the pre-stage inverters to the bipolar emitter-follower. Two key factors determining the driver delay time, output load capacitance and wiring resistance, are described and analyzed in detail. Experiments with a gate-chains test chip fabricated with 0.5-µm BiCMOS technology confirm the low-voltage operation of the FF-BiNMOS driver. Applications of the new driver to a BiCMOS SRAM are also described.

BiCMOS circuit performance at low supply voltages is discussed. The basic advantages of BiCMOS circuits are briefly reviewed, and then actual advantages of the BiCMOS gate and the BiCMOS sense circuits, which are typical BiCMOS circuits, are explained. Their advantages at low supply voltages are also discussed. BiCMOS gates, BiCMOS sense circuits, and combined circuits that include a BiCMOS sense circuit are two or three times faster than CMOS circuits down to a supply voltage of 2 V. BiCMOS circuits have high performance even at low supply voltages such as 2 V.