A High-Speed Feed-Forward BiNMOS Driver for Low-Voltage LSls
Summary :
A feed-forward (FF) BiNMOS driver that combines a multi-stage CMOS inverter and a bipolar emitter-follower transistor is proposed as a low-voltage BiCMOS driver. High-speed and low-voltage operation is made possible by a multi-stage inverter and feed-forward control from the pre-stage inverters to the bipolar emitter-follower. Two key factors determining the driver delay time, output load capacitance and wiring resistance, are described and analyzed in detail. Experiments with a gate-chains test chip fabricated with 0.5-µm BiCMOS technology confirm the low-voltage operation of the FF-BiNMOS driver. Applications of the new driver to a BiCMOS SRAM are also described.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E76-C No.5 pp.687-694
- Publication Date
- 1993/05/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Section on Low-Power and Low-Voltage Integrated Circuits)
- Category
Authors
Keyword
Latest Issue
Copyrights notice of machine-translated contents
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Cite this
Copy
Takakuni DOUSEKI, Shin'ichiro MUTOH, "A High-Speed Feed-Forward BiNMOS Driver for Low-Voltage LSls" in IEICE TRANSACTIONS on Electronics,
vol. E76-C, no. 5, pp. 687-694, May 1993, doi: .
Abstract: A feed-forward (FF) BiNMOS driver that combines a multi-stage CMOS inverter and a bipolar emitter-follower transistor is proposed as a low-voltage BiCMOS driver. High-speed and low-voltage operation is made possible by a multi-stage inverter and feed-forward control from the pre-stage inverters to the bipolar emitter-follower. Two key factors determining the driver delay time, output load capacitance and wiring resistance, are described and analyzed in detail. Experiments with a gate-chains test chip fabricated with 0.5-µm BiCMOS technology confirm the low-voltage operation of the FF-BiNMOS driver. Applications of the new driver to a BiCMOS SRAM are also described.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e76-c_5_687/_p
Copy
@ARTICLE{e76-c_5_687,
author={Takakuni DOUSEKI, Shin'ichiro MUTOH, },
journal={IEICE TRANSACTIONS on Electronics},
title={A High-Speed Feed-Forward BiNMOS Driver for Low-Voltage LSls},
year={1993},
volume={E76-C},
number={5},
pages={687-694},
abstract={A feed-forward (FF) BiNMOS driver that combines a multi-stage CMOS inverter and a bipolar emitter-follower transistor is proposed as a low-voltage BiCMOS driver. High-speed and low-voltage operation is made possible by a multi-stage inverter and feed-forward control from the pre-stage inverters to the bipolar emitter-follower. Two key factors determining the driver delay time, output load capacitance and wiring resistance, are described and analyzed in detail. Experiments with a gate-chains test chip fabricated with 0.5-µm BiCMOS technology confirm the low-voltage operation of the FF-BiNMOS driver. Applications of the new driver to a BiCMOS SRAM are also described.},
keywords={},
doi={},
ISSN={},
month={May},}
Copy
TY - JOUR
TI - A High-Speed Feed-Forward BiNMOS Driver for Low-Voltage LSls
T2 - IEICE TRANSACTIONS on Electronics
SP - 687
EP - 694
AU - Takakuni DOUSEKI
AU - Shin'ichiro MUTOH
PY - 1993
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E76-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 1993
AB - A feed-forward (FF) BiNMOS driver that combines a multi-stage CMOS inverter and a bipolar emitter-follower transistor is proposed as a low-voltage BiCMOS driver. High-speed and low-voltage operation is made possible by a multi-stage inverter and feed-forward control from the pre-stage inverters to the bipolar emitter-follower. Two key factors determining the driver delay time, output load capacitance and wiring resistance, are described and analyzed in detail. Experiments with a gate-chains test chip fabricated with 0.5-µm BiCMOS technology confirm the low-voltage operation of the FF-BiNMOS driver. Applications of the new driver to a BiCMOS SRAM are also described.
ER -
English
