A 150 GHz fundamental oscillator employing an inter-stage matching network based on a transmission line is presented in this letter. The proposed oscillator consists of a two-stage common-emitter amplifier loop, whose inter-stage connections are optimized to meet the oscillation condition. The oscillator is designed in a 130-nm SiGe BiCMOS process that offers fT and fMAX of 350 GHz and 450 GHz. According to simulation results, an output power of 3.17 dBm is achieved at 147.6 GHz with phase noise of -115 dBc/Hz at 10 MHz offset and figure-of-merit (FoM) of -180 dBc/Hz.

A wireless sensor terminal module of 5cc size (2.5 cm × 2.5 cm × 0.8 cm) that does not require a battery is proposed by integrating three kinds of circuit technologies. (i) a low-power sensor interface: an FM modulation type CMOS sensor interface circuit that can operate with a typical power consumption of 24.5 μW was fabricated by the 0.7-μm CMOS process technology. (ii) power supply to the sensor interface circuit: a wireless power transmission characteristic to a small-sized PCB spiral coil antenna was clarified and applied to the module. (iii) wireless sensing from the module: backscatter communication technology that modulates the signal from the base terminal equipment with sensor information and reflects it, which is used for the low-power sensing operation. The module fabricated includes a rectifier circuit with the PCB spiral coil antenna that receives wireless power transmitted from base terminal equipment by electromagnetic resonance coupling and converts it into DC power and a sensor interface circuit that operates using the power. The interface circuit modulates the received signal with the sensor information and reflects it back to the base terminal. The module could achieve 100 mm communication distance when 0.4 mW power is feeding to the sensor terminal.

This paper presents a power amplifier (PA) designed as a part of a transceiver front-end fabricated in 130-nm SiGe BiCMOS. The PA shares its output antenna port with a low noise amplifier using a low-loss transmission/reception switch. The output matching network of the PA is designed to provide high output power, low AM-AM distortion, and uniform performance over frequencies in the range of 24.25-29.5GHz. Measurements of the front-end in TX mode demonstrate peak S21 of 30.3dB at 26.7GHz, S21 3-dB bandwidth of 9.8GHz from 22.2to 32.0GHz, and saturated output power (Psat) above 20dBm with power-added efficiency (PAE) above 22% from 24 to 30GHz. For a 64-QAM 400MHz bandwidth orthogonal frequency division multiplexing (OFDM) signal, -25dBc error vector magnitude (EVM) is measured at an average output power of 12.3dBm and average PAE of 8.8%. The PA achieves a competitive ITRS FoM of 92.9.

This paper presents a compact fully-differential distributed amplifier using a coupled inductor. Differential distributed amplifiers are widely required in optical communication systems. Most of the distributed amplifiers reported in the past are single-ended or pseudo-differential topologies. In addition, the differential distributed amplifiers require many inductors, which increases the silicon cost. In this study, we use differentially coupled inductors to reduce the chip area to less than half and eliminate the difficulties in layout design. The challenge in using coupled inductors is the capacitive parasitic coupling that degrades the flatness of frequency response. To address this challenge, the odd-mode image parameters of a differential artificial transmission line are derived using a simple loss-less model. Based on the analytical results, we optimize the dimensions of the inductor with the gradient descent algorithm to achieve accurate impedance matching and phase matching. The amplifier was fabricated in 0.18-µm CMOS technology. The core area of the amplifier is 0.27 mm2, which is 57% smaller than the previous work. Besides, we demonstrated a small group delay variation of ±2.7 ps thanks to the optimization. the amplifier successfully performed 30-Gbps NRZ and PAM4 transmissions with superior jitter performance. The proposed technique will promote the high-density integration of differential traveling wave devices.

A power-scalable sub-sampling phase-locked loop (SSPLL) is proposed for realizing dual-mode operation; high-performance mode with good phase noise and power-saving mode with moderate phase noise. It is the most efficient way to reduce power consumption by lowering the supply voltage. However, there are several issues with the low-supply millimeter-wave (mmW) SSPLL. This work discusses some techniques, such as a back-gate forward body bias (FBB) technique, in addition to employing a CMOS deeply depleted channel process (DDC).

We developed a self-controllable voltage level (SVL) circuit and applied this circuit to a single-power-supply, six-transistor complementary metal-oxide-semiconductor static random-access memory (SRAM) to not only improve both write and read performances but also to achieve low standby power and data retention (holding) capability. The SVL circuit comprises only three MOSFETs (i.e., pull-up, pull-down and bypass MOSFETs). The SVL circuit is able to adaptively generate both optimal memory cell voltages and word line voltages depending on which mode of operation (i.e., write, read or hold operation) was used. The write margin (VWM) and read margin (VRM) of the developed (dvlp) SRAM at a supply voltage (VDD) of 1V were 0.470 and 0.1923V, respectively. These values were 1.309 and 2.093 times VWM and VRM of the conventional (conv) SRAM, respectively. At a large threshold voltage (Vt) variability (=+6σ), the minimum power supply voltage (VMin) for the write operation of the conv SRAM was 0.37V, whereas it decreased to 0.22V for the dvlp SRAM. VMin for the read operation of the conv SRAM was 1.05V when the Vt variability (=-6σ) was large, but the dvlp SRAM lowered it to 0.41V. These results show that the SVL circuit expands the operating voltage range for both write and read operations to lower voltages. The dvlp SRAM reduces the standby power consumption (PST) while retaining data. The measured PST of the 2k-bit, 90-nm dvlp SRAM was only 0.957µW at VDD=1.0V, which was 9.46% of PST of the conv SRAM (10.12µW). The Si area overhead of the SVL circuits was only 1.383% of the dvlp SRAM.

Hardware oriented security and trust of semiconductor integrated circuit (IC) chips have been highly demanded. This paper outlines the requirements and recent developments in circuits and packaging systems of IC chips for security applications, with the particular emphasis on protections against physical implementation attacks. Power side channels are of undesired presence to crypto circuits once a crypto algorithm is implemented in Silicon, over power delivery networks (PDNs) on the frontside of a chip or even through the backside of a Si substrate, in the form of power voltage variation and electromagnetic wave emanation. Preventive measures have been exploited with circuit design and packaging technologies, and partly demonstrated with Si test vehicles.

This paper presents a Ka-band high-efficiency power amplifier (PA) with a novel adaptively controlled gate capacitor circuit and a two-step adaptive bias circuit for 5th generation (5G) mobile terminal applications fabricated using a 45-nm silicon on insulator (SOI) CMOS process. The PA adopts a stacked FET structure to increase the output power because of the low breakdown voltage issue of scaled MOSFETs. The novel adaptive gate capacitor circuit properly controls the RF swing for each stacked FET to achieve high efficiency in the several-dB back-off region. Further, the novel two-step adaptive bias circuit effectively controls the gate voltage for each stacked FET for high linearity and high back-off efficiency. At a supply voltage of 4 V, the fabricated PA has exhibited a saturated output power of 20.0 dBm, a peak power added efficiency (PAE) of 42.7%, a 3dB back-off efficiency of 32.7%, a 6dB back-off efficiency of 22.7%, and a gain of 15.6 dB. The effective PA area was 0.82 mm by 0.74 mm.

We have developed a Si-CMOS terahertz image sensor to address the paucity of low-cost terahertz detectors. Our imaging pixel directly connects to a VCO-based ADC and achieves pixel parallel ADC architecture for high-speed global shutter THz imaging. In this paper, we propose a digital calibration technique for offset and gain variation of each pixel using global shutter operation. The calibration technique gives reference signal to all pixels simultaneously and takes reference frames as a part of the high-speed image captures. Using this technique, we achieve offset/non-linear gain variation suppression of 85.7% compared to without correction.

This paper proposes a low-power 100Gb/s four-level pulse amplitude modulation driver (PAM-4 Driver) based on linear distortion compensation structure for thin-film Lithium Niobate (LiNbO3) modulators, which manages to achieve high linearity in the output. The inductive peaking technology and open drain structure enable the overall circuit to achieve a 31-GHz bandwidth. With an area of 0.292 mm2, the proposed PAM-4 driver chip is designed in a 65-nm process to achieve power consumption of 37.7 mW. Post-layout simulation results show that the power efficiency is 0.37 mW/Gb/s, RLM is more than 96%, and the FOM value is 8.84.

A power-scalable wideband distributed amplifier is proposed. For reducing the power consumption of this power-hungry amplifier, it is efficient to lower the supply voltage. However, there is a hurdle owing to the transistor threshold voltage. In this work, a CMOS deeply depleted channel process is employed to overcome the hurdle.

This paper presents a high-resolution and low-insertion-loss CMOS hybrid phase shifter with a nonuniform matching technique for satellite communication (SATCOM). The proposed hybrid phase shifter includes three 45° coarse phase-shifting stages and one 45° fine phase-tuning stage. The coarse stages are realized by bridged-T switch-type phase shifters (STPS) with 45° phase steps. The fine-tuning stage is based on a reflective-type phase shifter (RTPS) with two identical LC load tanks for phase tuning. A 0.8° phase resolution is realized by this work to support fine beam steering for the SATCOM. To further reduce the chain insertion loss, a nonuniform matching technique is utilized at the coarse stages. For the coarse and fine stages, the measured RMS gain errors at 29GHz are 0.7dB and 0.3dB, respectively. The measured RMS phase errors are 0.8° and 0.4°, respectively. The proposed hybrid phase shifter maintains return losses of all phase states less than -12dB from 24GHz to 34GHz. The presented hybrid phase shifter is fabricated in a standard 65-nm CMOS technology with a 0.14mm2 active area.

This paper presents a fully integrated yet compact receiver front-end for Sub-GHz applications such as Internet-of-Things (IoT). The low noise amplifier (LNA) matching network leverages an inductance boosting technique. A relatively small on-chip inductor with a compact area achieves impedance matching in such a low frequency. Moreover, a passive-mixer-first mode bypasses the LNA to extend the receiver dynamic-range. The passive mixer provides matching to the 50Ω antenna interface to eliminate the need for additional passive components. Therefore, the receiver can be fully-integrated without any off-chip matching components. The flipped-voltage-follower (FVF) cell is adopted in the low pass filter (LPF) and the variable gain amplifier (VGA) for its high linearity and low power consumption. Fabricated in 65nm LP CMOS process, the proposed receiver front-end occupies 0.37mm2 core area, with a tolerable input power ranging from -91.5dBm to -1dBm for 500kbps GMSK signal at 924MHz frequency. The power consumption is 1mW power under a 1.2V supply.

Time-of-flight (TOF) range imaging is a promising technology for various applications such as touchless control, augmented reality interface, and automotive. The TOF range imagers are classified into two methods: direct TOF with single photo avalanche diodes and indirect TOF with lock-in pixels. The indirect TOF range imagers have advantages in terms of a high spatial resolution and high depth precision because their pixels are simple and can handle many photons at one time. This paper reviews and discusses principal lock-in pixels reported both in the past and present, including circuit-based and charge-modulator-based lock-in pixels. In addition, key technologies that include enhancing sensitivity and background suppression techniques are also discussed.

This brief proposes a solar-cell-assisted wireless biosensing system that operates using a biofuel cell (BFC). To facilitate BFC area reduction for the use of this system in area-constrained continuous glucose monitoring contact lenses, an energy harvester combined with an on-chip solar cell is introduced as a dedicated power source for the transmitter. A dual-oscillator-based supply voltage monitor is employed to convert the BFC output into digital codes. From measurements of the test chip fabricated in 65-nm CMOS technology, the proposed system can achieve 99% BFC area reduction.

This paper proposes novel test techniques for high accuracy measurement of ADCs and a ramp generator on a CMOS image sensor (CIS) chip. The test circuit for the ADCs has a dual path and has an ability of multi-functional fine pattern generator that can define any input for each column to evaluate CIS specific characteristics electrically. The test circuit for the ramp generator can realize an on-chip current cell test and reject the current cell failure within 1LSB accuracy. We fabricated the test sensor using 55nm CIS process and measured the IP characteristics. Measured results show INL of 14.6LSB, crosstalk of 14.9LSB and column interference noise of 5.4LSB. These measured results agree with the designed values. By using this technique, we confirmed the accurate ADC measurement can be realized without being affected by the ambiguity of the optical input.

A linear and broadband power amplifier (PA) for 5G phased-array is presented. The design improves the linearity by operating the transistors in deep class AB region. The design broadens the bandwidth by applying the inter-stage weakly-coupled transformer. The theory of transformers is illustrated by analyzing the odd- and even-mode model. Based on this, the odd-mode Q factor is used to evaluate the quality of impedance matching. Weakly- and strongly-coupled transformers are compared and analyzed in both the design process and applicable characteristics. Besides, a well-founded method to achieve the transformer-based balanced-unbalanced transformation is proposed. The fully integrated two-stage PA is designed and implemented in a 65-nm CMOS process with a 1-V power supply to provide a maximum small-signal gain of 19dB. The maximum output 1-dB compressed power (P1dB) of 17.4dBm and the saturated output power (PSAT) of 18dBm are measured at 28GHz. The power-added efficiency (PAE) of the P1dB is 26.5%. From 23 to 32GHz, the measured P1dB is above 16dBm, covering the potential 5G bands worldwide around 28GHz.

This paper introduces a high-resolution and compact CMOS switch-type phase shifter (STPS) for the 5th generation mobile network (5G) n260 band. In this work, totally four coarse phase shifting stages and a high-resolution tuning stage are included. The coarse stages based on the bridged-T topology is capable of providing 202.5° phase coverage with a 22.5° tuning step. To further improve the phase shifting resolution, a compact fine-tuning stage covering 23° is also integrated with the coarse stages. Sub-degree phase shifting resolution is realized for supporting the fine beam-steering and high-accuracy phase calibration in the 5G new radio. Simplified phase control algorithm and suppressed insertion loss can also be maintained by the proposed fine-tuning stage. In the measurement, the achieved RMS gain errors at 39 GHz are 0.1 dB and 0.4 dB for the coarse stages and fine stage, respectively. The achieved RMS phase errors at 39 GHz are 3.1° for the coarse stages and 0.1° for the fine stage. Within 37 GHz to 40 GHz, the measured return loss within all phase-tuning states is always better than -14 dB. The proposed phase shifter consumes a core area of only 0.12mm2 with 65-nm CMOS process, which is area-efficient.

In order to expect the single event occurrence on highly integrated CMOS memory circuit, quantitative evaluation of charge sharing between memory cells is needed. In this study, charge sharing area induced by heavy ion incident is quantitatively calculated by using device-simulation-based method. The validity of this method is experimentally confirmed using the charged heavy ion accelerator.

This paper demonstrates that a 360° radio-frequency phase detector consisting of a combination of symmetrical mixers and 45° phase shifters with tunable devices can achieve a low phase-detection error over a wide frequency range. It is shown that the phase detection error does not depend on the voltage gain of the 45° phase shifter. This allows the usage of tunable devices as 45° phase shifters for a wide frequency range with low phase-detection errors. The fabricated phase detector having tunable low-pass filters as the tunable device demonstrates phase detection errors lower than 2.0° rms in the frequency range from 3.0 GHz to 10.5 GHz.