This paper proposes a cell layout synthesis method via Boolean Satisfiability (SAT). Cell layout synthesis problems are first transformed into SAT problems by our formulations. Our method realizes a high-speed layout synthesis for CMOS logic cells and guarantees to generate the minimum-width cells with routability under our layout styles. It considers complementary P-/N-MOSFETs individually during transistor placement, and can generate smaller width layout compared with pairing the complementary P-/N-MOSFETs case. To demonstrate the effectiveness of our SAT-based cell synthesis, we present experimental results which compare it with the 0-1 ILP-based transistor placement method and a commercial cell generation tool. The experimental results show that our SAT-based method can generate minimum-width placements in much shorter run time than the 0-1 ILP-based transistor placement method, and can generate the cell layouts of 32 static dual CMOS logic circuits in 54% run time compared with the commercial tool. Area increase of our method without compaction is only 3% compared with the commercial tool with compaction.

Character projection (CP) is a high-speed mask-less exposure technique for electron-beam direct writing (EBDW). In CP exposure of VIA layers, higher throughput is realized if more VIAs are exposed in each EB shot, but it will result in huge number of VIA characters to cover arbitrary VIA arrangements. We adopt one-dimensional VIA arrays as the basic CP character architecture to increase VIA numbers in an EB shot while saving the stencil area by superposed character arrangement. In addition, CP throughput is further improved by layout constraints on the VIA placement in the detail routing phase. Our experimental results proved the feasibility of our exposure strategy in the practical CP use in 14nm lithography.

This paper proposes an all-digital process variability monitor which utilizes a simple buffer ring with a pulse counter. The proposed circuit monitors the process variability according to a count number of a single pulse which propagates on the buffer ring and a fixed logic level after the pulse vanishes. The proposed circuit has been fabricated in 65 nm CMOS process and the measurement results demonstrate that we can monitor the PMOS and NMOS variabilities independently using the proposed monitoring circuit. The proposed monitoring technique is suitable not only for the on-chip process variability monitoring but also for the in-field monitoring of aging effects such as negative/positive bias instability (NBTI/PBTI).

This paper discusses a pulse generator implemented by CMOS flipped on a glass substrate aiming at low power applications with low duty cycle. The pulse generator is theoretically possible to generate a pulse at a frequency near and beyond Fmax. It also features a quick starting time and zero stand-by power. By using a simplified circuit model, analytical expressions for Q factor, energy conversion efficiency, output energy, and oscillation frequency of the pulse generator are derived. Pulse generator prototypes are designed on a 0.18 μm CMOS chip flipped over a transmission line resonator on a glass substrate. Measurement results of two different prototypes confirm the feasibility of the proposed circuit and the analytical model.

This paper proposes a sub-ps resolution TDC utilizing a differential pulse-shrinking buffer ring. This scheme uses two differentially-operated pulse-shrinking inverters and the TDC resolution is finely controlled by the transistor size ratio between them. The proposed TDC realizes 9 bit, 580 fs resolution in a 0.18 µm CMOS technology with 0.04 mm2 area, and achieves DNL and INL of +0.8/-0.8LSB and +4.3/-4.0LSB, respectively, without linearity calibration. A power dissipation at 1.5 MS/s ranges from 10.8 to 12.6 mW depending on the input time intervals.

This paper proposes an all-digital process variability monitor based on a shared structure of a buffer ring and a ring oscillator. The proposed circuit monitors the PMOS and NMOS process variabilities independently according to a count number of a single pulse which propagates on the ring during the buffer ring mode, and an oscillation period during the ring oscillator mode. Using this shared-ring structure, we reduce the occupation area about 40% without loss of process variability monitoring properties compared with the conventional circuit. The proposed shared-ring circuit has been fabricated in 65 nm CMOS process and the measurement results with two different wafer lots show the feasibility of the proposed process variability monitoring scheme.

To improve throughput of Electron Beam Direct Writing (EBDW) with Character Projection (CP) method, a structured routing architecture (SRA) has been proposed to restrict VIA placement and wire-track transition. It reduces possible layout patterns in the interconnect layers, and increases VIA and metal figure numbers in the EB shots while suppressing the CP character number explosion. In this paper, we discuss details of the SRA design methodology, and demonstrate the CP performance by SRA in comparison with other EBDW techniques. Our experimental results show viable CP performance for practical use, and prove SRA's feasibility in 14nm mass fabrication.

A frequently occurring subcircuit consists of a loop of a resistor (R), a field-effect transistor (FET), and a capacitor (C). The FET acts as a switch, controlled at its gate terminal by a clock voltage. This subcircuit may be acting as a sample-and-hold (S/H), as a passive mixer (P-M), or as a bandpass filter or bandpass impedance. In this work, we will present a useful analysis that leads to a simple signal flow graph (SFG), which captures the FET-R-C circuit's action completely across a wide range of design parameters. The SFG dissects the circuit into three filtering functions and ideal sampling. This greatly simplifies analysis of frequency response, noise, input impedance, and conversion gain, and leads to guidelines for optimum design. This paper focuses on the analysis of a single-path FET-R-C circuit's signal transfer characteristics including the reconstruction of the complete waveform from the discrete-time sampled voltage.

We introduce a 16 × cascaded time difference amplifier (TDA) using a differential logic delay cell with 0.18 µm CMOS process. By employing the differential logic delay cell in the delay chain instead of the CMOS logic delay cell, less than 8% TD gain offset with 150 ps input range is achieved. The input referred standard deviation of the output time difference error is 2.7 ps and the input referred is improved by 17% compared with that of the previous TDA using the CMOS logic delay cell.

A 369Kbit SRAM configurable up to four ports, namely, a Port-Configurable (PC) SRAM embedded in 235 KG track-free gate array has been newly developed. The chip fabricated with 0.5 µm double polysilicon and aluminum process technology showed 5 ns on-chip access time. This is considered to be one of the solutions for many applications that require memory system of high speed, large density and high flexibility in configuration such as number of ports, words and bits. The basic PC SRAM cell is a polysilicon resistor load SRAM cell with port customization terminals which are connected by standard gate array customization layers, first and second Al and via hole. In order that a high flexibility in column partitioning is available, a column-sliceable design is employed. Two column-sliceable sense amplifier, Trip Point Controlled CMOS (TPCC) sence amp and Symmetric Current Mirror (SCM) sense amp, are proposed to be laid out wihtin a single column pitch. One basic PC SRAM building block of 123 Kbit consists of 4 sets of decoders, 512 rows each, and 240 columns. For low power and high speed operation, double word line structure with section driving 40 columns are employed. Therefore, in addition to the port configurability, a high flexibility in row and column is available. The maximum word depth is 6 k words with 60 column single port memory. The maximum number of independently operating memory is twelve in case of single port. The chip contains three blocks of 369 kbit so that wide range of selection of cache, TLB and resistor files are integrated with MPU and other logic circuits.

This paper demonstrates a quick start method for Pulse-Width Controlled PLL (PWPLL). Our PLL converts the internal state into digital signals and stores them into a memory before getting into a sleep mode. The wakeup sequence reads the memory and presets the internal state so that our PLL can start the operation with close to the previously locked condition. Since the internal state includes not only the frequency control code but also the phase information, our quick start PLL locks in several clock cycles. A prototype chip fabricated in 0.18µm standard CMOS shows 50ns settling time (4 reference clock cycles), 18.5mW power consumption under 1.8V nominal supply voltage with 105µm×870µm silicon area.

In this paper, we propose a novel gate delay time mismatch tolerant time-mode signal accumulator whose input and output are represented by a time difference of two digital signal transitions. Within the proposed accumulator, the accumulated value is stored as the time difference between the two pulses running around the same ring of a delay line, so that there is no mismatch between the periods of the two pulses, thus the output drift of the accumulator is suppressed in principle without calibrating mismatch of two rings, which is used to store the accumulated value in the conventional one. A prototype of the proposed accumulator was fabricated in 180nm CMOS. The accumulating operation is confirmed by both time and frequency domain experiments. The standard deviation of the error of the accumulating operation is 9.8ps, and compared with the previous work, the peak error over full-scale is reduced by 46% without calibrating the output drift.

This paper proposes a time-to-digital converter (TDC) utilizing the cascaded time difference amplifier (TDA) and shows measurement results with 0.18 µm CMOS. The proposed TDC operates in two modes, a wide input range mode and a fine time resolution mode. We employ a non-linearity calibration technique based on a lookup table. The wide input range mode shows 10.2 ps time resolution over 1.3 ns input range with DNL and INL of +0.8/-0.7LSB and +0.8/-0.4LSB, respectively. The fine time resolution mode shows 1.0 ps time resolution over 60 ps input range with DNL and INL of +0.9/-0.9LSB and +0.8/-1.0LSB, respectively.

This paper proposes a triangular active charge injection method to reduce resonant power supply noise by injecting the adequate amount of charge into the supply line of the LSI in response to the current consumption of the core circuit. The proposed circuit is composed of three key components, a voltage drop detector, an injection controller circuit and a canceling capacitor circuit. In addition to the theoretical analysis of the proposed method, the measurement results indicate that our proposed method with active capacitor can realize about 14% noise reduction compared with the original noise amplitude. The proposed circuit consumes 25.2 mW in steady state and occupies 0.182 mm2.

An optimal design method for a sub-ranging Analog-to-Digital Converter (ADC) based on stochastic comparator is demonstrated by performing theoretical analysis of random comparator offset voltages. If the Cumulative Distribution Function (CDF) of the comparator offset is defined appropriately, we can calculate the PDFs of the output code and the effective resolution of a stochastic comparator. It is possible to model the analog-to-digital conversion accuracy (defined as yield) of a stochastic comparator by assuming that the correlations among the number of comparator offsets within different analog steps corresponding to the Least Significant Bit (LSB) of the output transfer function are negligible. Comparison with Monte Carlo simulation verifies that the proposed model precisely estimates the yield of the ADC when it is designed for a reasonable target yield of >0.8. By applying this model to a stochastic comparator we reveal that an additional calibration significantly enhances the resolution, i.e., it increases the Number of Bits (NOB) by ∼ 2 bits for the same target yield. Extending the model to a stochastic-comparator-based sub-ranging ADC indicates that the ADC design parameters can be tuned to find the optimal resource distribution between the deterministic coarse stage and the stochastic fine stage.

This paper proposes a cell layout synthesis technique to minimize the sensitivity to wiring faults due to spot defects. We modeled the sensitivity to faults on intra-cell routings with consideration to the spot defects size distribution and the end effect of critical areas. The effect of the sensitivity reduction on the yield is also discussed. By using the model as a cost function, we comprehensively generate the minimum width layout of CMOS logic cells and select the optimal layouts. Experimental results show that our technique reduces about 15% of the fault sensitivities compared with the wire-length-minimum layouts for benchmark CMOS logic circuits which have up to 14 transistors.

A 150 GHz fundamental oscillator employing an inter-stage matching network based on a transmission line is presented in this letter. The proposed oscillator consists of a two-stage common-emitter amplifier loop, whose inter-stage connections are optimized to meet the oscillation condition. The oscillator is designed in a 130-nm SiGe BiCMOS process that offers fT and fMAX of 350 GHz and 450 GHz. According to simulation results, an output power of 3.17 dBm is achieved at 147.6 GHz with phase noise of -115 dBc/Hz at 10 MHz offset and figure-of-merit (FoM) of -180 dBc/Hz.

Self-dithered digital delta-sigma modulators (DDSMs) are commonly used in fractional-N frequency synthesizers due to their ability to eliminate unwanted spurs from the synthesizer’s spectra without requiring additional hardware. However, when operating with a low-bit input, self-dithered DDSMs can still suffer from spurious tones at certain inputs. In this paper, we propose a self-dithered MASH 1-1-1-1 structure to mitigate the spur issue in the self-dithered MASH DDSMs. The proposed self-dithered MASH 1-1-1-1 suppresses the spurs with shaped dithering and achieves 4th order noise shaping.

This paper proposes flat and hierarchical approaches for generating a minimum-width transistor placement of CMOS cells in presence of non-dual P and N type transistors. Our approaches are the first exact method which can be applied to CMOS cells with any types of structure. Non-dual CMOS cells occupy a major part of an industrial standard-cell library. To generate the exact minimum-width transistor placement of non-dual CMOS cells, we formulate the transistor placement problem into Boolean Satisfiability (SAT) problem considering the P and N type transistors individually. Using the proposed method, the transistor placement problem of any types of CMOS cells can be solved exactly. In addition, the experimental results show that our flat approach generates smaller width placement for 29 out of 103 dual cells than that of the conventional method. Our hierarchical approach reduces the runtimes drastically. Although this approach has possibility to generate wider placements than that of the flat approach, the experimental results show that the width of only 3 out of 147 cells solved by our hierarchical approach are larger than that of the flat approach.

This paper proposes a reference-clock-less quick-start-up CDR that resumes from a stand-by state only with a 4-bit preamble utilizing a phase generator with an embedded Time-to-Digital Converter (TDC). The phase generator detects 1-UI time interval by using its internal TDC and works as a self-tunable digitally-controlled delay line. Once the phase generator coarsely tunes the recovered clock period, then the residual time difference is finely tuned by a fine Digital-to-Time Converter (DTC). Since the tuning resolution of the fine DTC is matched by design with the time resolution of the TDC that is used as a phase detector, the fine tuning completes instantaneously. After the initial coarse and fine delay tuning, the feedback loop for frequency tracking is activated in order to improve Consecutive Identical Digits (CID) tolerance of the CDR. By applying the frequency tracking architecture, the proposed CDR achieves more than 100bits of CID tolerance. A prototype implemented in a 65nm bulk CMOS process operates at a 0.9-2.15Gbps continuous rate. It consumes 5.1-8.4mA in its active state and 42μA leakage current in its stand-by state from a 1.0V supply.