This paper demonstrates a pulse width controlled PLL without using an LPF. A pulse width controlled oscillator accepts the PFD output where its pulse width controls the oscillation frequency. In the pulse width controlled oscillator, the input pulse width is converted into soft thermometer code through a time to soft thermometer code converter and the code controls the ring oscillator frequency. By using this scheme, our PLL realizes LPF-less as well as quantization noise free operation. The prototype chip achieves 60 µm 20 µm layout area using 65 nm CMOS technology along with 1.73 ps rms jitter while consuming 2.81 mW under a 1.2 V supply with 3.125 GHz output frequency.

This paper demonstrates a PLL compiler that generates the final GDSII data from a specification of input and output frequencies with PVT corner conditions. A Pulse Width Controlled PLLs (PWPLL) is composed of digital blocks, and thus suitable for being designed using a standard cell library and being layed out with a commercially available place-and-route (P&R) tool. A PWPLL has 8 design parameters. Our PLL compiler decides the 8 parameters and confirms the PLL operation with the following functions: 1) calculates rough parameter values based on an analytical model, 2) generates SPICE and gate-level verilog netlists with given parameter values, 3) runs SPICE simulations and analyzes the waveform, to examine the oscillation frequency or the voltage of specified nodes at a given time, 4) changes the parameter values to an appropriate direction depending on the waveform analyses to obtain the optimized parameter values, 5) generates scripts that can be used in commercial design tools and invokes the tools with the gate-level verilog netlist to get the final LVS/DRC-verified GDSII data from a P&R and a verification tools, and finally 6) generates the necessary characteristic summary sheets from the post-layout SPICE simulations extracted from the GDSII. Our compiler was applied to an 0.18µm standard CMOS technology to design a PLL with 600MHz output, 600/16MHz input frequency, and confirms the PLL operation with 1.2mW power and 85µm×85µm layout area.

This paper demonstrates a power supply noise reduction using on-board stubs. A quarter-length stub attached to the power supply line of an LSI chip works as a band-eliminate filter, and suppresses the power supply noise of the designed frequency. Preliminary experiments show that 87% of the designed frequency noise component is suppressed when stub patterns are written on a power supply area on a PCB board for a 1.25 GHz operating LSI. The results show the possibility of the stub on-chip integration when the operating frequency of LSIs becomes higher and the stub length becomes shorter.

This paper proposes an on-chip measurement method of PLL through fully digital interface. For the measurement of the PLL transfer function, we modulated the phase of the PLL input in triangular form using Digital-to-Time Converter (DTC) and read out the response by Time-to-Digital Converter (TDC). Combination of the DTC and TDC can obtain the transfer function of the PLL both in the magnitude domain and the phase domain. Since the DTC and TDC can be controlled and observed by digital signals, the measurement can be conducted without any high speed analog signal. Moreover, since the DTC and TDC can be designed symmetrically, the measurement method is robust against Process, Voltage, and Temperature (PVT) variations. At the same time, the employment of the TDC also enables a measurement of the PLL lock range by changing the division ratio of the divider. Two time domain circuits were designed using 180nm CMOS process and the HSPICE simulation results demonstrated the measurement of the transfer function and lock range.

This paper demonstrates a feedforward active substrate noise cancelling technique using a power supply di/dt detector. Since the substrate is usually tied with the ground line with a low impedance, the substrate noise is closely related to the ground bounce which is proportional to the di/dt when inductance is dominant on the ground line impedance. Our active cancelling detects the di/dt of the power supply, and injects an anti-phase current into the substrate so that the di/dt-proportional substrate noise is cancelled out. Our first trial shows that 34% substrate noise reduction is achieved on our test circuit, and the theoretical analysis shows that the optimized canceller design will enhance the substrate noise suppression ratio up to 56%.

This paper presents a decoupling capacitance boosting method for the resonant supply noise reduction by fast voltage hopping of DVS systems. The proposed method utilizes a foot transistor as a switch between a conventional decoupling capacitor (decap) and GND. The switching controls of the foot transistor depending on the supply noise states achieve an effective noise reduction as well as fast settling time compared with the conventional passive decaps. The measurement results of a test chip fabricated in a 0.18 µm CMOS technology show 12X boost of effective decap value, and 65.8% supply noise reduction with 96% settling time improvement.

This paper presents an on-chip resonant supply noise canceller utilizing parasitic capacitance of sleep blocks. The test chip was fabricated in a 0.18 µm CMOS process and measurement results show 43.3% and 12.5% supply noise reduction on the abrupt supply voltage switching and the abrupt wake-up of a sleep block, respectively. The proposed method requires 1.5% area overhead for four 100 k-gate blocks, which is 7.1 X noise reduction efficient comparing with the conventional decap for the same power supply noise, while achieves 47% improvement of settling time. These results make fast switching of power mode possible for dynamic voltage scaling and power gating.

This paper proposes an all-digital process variability monitor which utilizes a simple buffer ring with a pulse counter. The proposed circuit monitors the process variability according to a count number of a single pulse which propagates on the buffer ring and a fixed logic level after the pulse vanishes. The proposed circuit has been fabricated in 65 nm CMOS process and the measurement results demonstrate that we can monitor the PMOS and NMOS variabilities independently using the proposed monitoring circuit. The proposed monitoring technique is suitable not only for the on-chip process variability monitoring but also for the in-field monitoring of aging effects such as negative/positive bias instability (NBTI/PBTI).

We detail a self synchronous field programmable gate array (SSFPGA) with dual-pipeline (DP) architecture to conceal pre-charge time for dynamic logic, and its throughput optimization by using pipeline alignment implemented on benchmark circuits. A self synchronous LUT (SSLUT) consists of a three input tree-type structure with 8 bits of SRAM for programming. A self synchronous switch box (SSSB) consists of both pass transistors and buffers to route signals, with 12 bits of SRAM. One common block with one SSLUT and one SSSB occupies 2.2 Mλ2 area with 35 bits of SRAM, and the prototype SSFPGA with 3430 (1020) blocks is designed and fabricated using 65 nm CMOS. Measured results show at 1.2 V 430 MHz and 647 MHz operation for a 3 bit ripple carry adder, without and with throughput optimization, respectively. We find that using the proposed pipeline alignment techniques we can perform at maximum throughput of 647 MHz in various benchmarks on the SSFPGA. We demonstrate up to 56.1 times throughput improvement with our pipeline alignment techniques. The pipeline alignment is carried out within the number of logic elements in the array and pipeline buffers in the switching matrix.

Switched parasitic capacitors of sleep blocks with a tri-mode power gating structure are implemented to reduce on-chip resonant supply noise in 1.2 V, 65 nm standard CMOS process. The tri-mode power gating structure makes it possible to store charge into the parasitic capacitance of the power gated blocks. The proposed method achieves 53.1% and 57.9% noise reduction for wake-up noise and 130 MHz periodic supply noise, respectively. It also realizes noise cancelling without discharging time before using parasitic capacitors of sleep blocks, and shows 8.4x boost of the effective capacitance value with 2.1% chip area overhead. The proposed method can save the chip area for reducing resonant supply noise more effectively.

This paper presents a Time Difference Amplifier (TDA) that amplifies the input time difference into the output time difference. Cross coupled chains of variable delay cells with the same number of stages are applicable for TDA, and the gain is adjusted via the closed-loop control. The TDA was fabricated using 65 nm CMOS and the measurement results show that the time difference gain is 4.78 at a nominal power supply while the designed gain is 4.0. The gain is stable enough to be less than 1.4% gain shift under 10% power supply voltage fluctuation.

A reliable and automatic parameter extraction technique for DFB lasers is developed. The parameter extraction program which is named "LAPAREX" is able to determine many device parameters from a measured sub-threshold spectrum only, including gain- and index-coupling coefficients, and spatial phases of the grating at front and rear facets. Injection current dependence of coupling coefficients in a gain-coupled DFBlaser is observed, for the first time, by making use of it.

This paper discusses a pulse generator implemented by CMOS flipped on a glass substrate aiming at low power applications with low duty cycle. The pulse generator is theoretically possible to generate a pulse at a frequency near and beyond Fmax. It also features a quick starting time and zero stand-by power. By using a simplified circuit model, analytical expressions for Q factor, energy conversion efficiency, output energy, and oscillation frequency of the pulse generator are derived. Pulse generator prototypes are designed on a 0.18 μm CMOS chip flipped over a transmission line resonator on a glass substrate. Measurement results of two different prototypes confirm the feasibility of the proposed circuit and the analytical model.

This paper presents a multi functional range finder employing dual imager core on a single chip. Each imager core has functionalities of 2-D imaging and 3-D capture using the light section method with combinations of the dual imager core. The presented chip achieves, 2-D imaging mode, 3-D capture mode with the conventional light-section method, high-speed 3-D capture mode with the stereo matching mode, and 2-D and 3-D simultaneous capture mode. We demonstrate 58 fps 2-D imaging with 8 bit gray scale, and 24.8 rangemaps/s 3-D range-finder with the maximum range error of 1.619 mm and the standard deviation of 0.385 mm at 700 mm.

We introduce a 16 × cascaded time difference amplifier (TDA) using a differential logic delay cell with 0.18 µm CMOS process. By employing the differential logic delay cell in the delay chain instead of the CMOS logic delay cell, less than 8% TD gain offset with 150 ps input range is achieved. The input referred standard deviation of the output time difference error is 2.7 ps and the input referred is improved by 17% compared with that of the previous TDA using the CMOS logic delay cell.

This paper demonstrates the resonant power supply noise reduction effects of STO thin film decoupling capacitors, which are embedded in interposers. The on-interposer STO capacitor consists of SrTiO2 whose dielectric constant is about 20 and is sandwitched by Cu films in an interposer. The on-interposer STO capacitors are directly connected to the LSI PADs so that they provide large decoupling capacitance without package leadframe/bonding wire inductance, resulting in the reduction of the resonant power supply noise. The measured power supply waveforms show significant reduction of the power supply noise, and the Shmoo plots also show the contribution of the STO capacitors to the robust operations of LSIs.

This paper demonstrates a quick start method for Pulse-Width Controlled PLL (PWPLL). Our PLL converts the internal state into digital signals and stores them into a memory before getting into a sleep mode. The wakeup sequence reads the memory and presets the internal state so that our PLL can start the operation with close to the previously locked condition. Since the internal state includes not only the frequency control code but also the phase information, our quick start PLL locks in several clock cycles. A prototype chip fabricated in 0.18µm standard CMOS shows 50ns settling time (4 reference clock cycles), 18.5mW power consumption under 1.8V nominal supply voltage with 105µm×870µm silicon area.

In this paper, we propose a novel gate delay time mismatch tolerant time-mode signal accumulator whose input and output are represented by a time difference of two digital signal transitions. Within the proposed accumulator, the accumulated value is stored as the time difference between the two pulses running around the same ring of a delay line, so that there is no mismatch between the periods of the two pulses, thus the output drift of the accumulator is suppressed in principle without calibrating mismatch of two rings, which is used to store the accumulated value in the conventional one. A prototype of the proposed accumulator was fabricated in 180nm CMOS. The accumulating operation is confirmed by both time and frequency domain experiments. The standard deviation of the error of the accumulating operation is 9.8ps, and compared with the previous work, the peak error over full-scale is reduced by 46% without calibrating the output drift.

This paper proposes a time-to-digital converter (TDC) utilizing the cascaded time difference amplifier (TDA) and shows measurement results with 0.18 µm CMOS. The proposed TDC operates in two modes, a wide input range mode and a fine time resolution mode. We employ a non-linearity calibration technique based on a lookup table. The wide input range mode shows 10.2 ps time resolution over 1.3 ns input range with DNL and INL of +0.8/-0.7LSB and +0.8/-0.4LSB, respectively. The fine time resolution mode shows 1.0 ps time resolution over 60 ps input range with DNL and INL of +0.9/-0.9LSB and +0.8/-1.0LSB, respectively.

This paper proposes a triangular active charge injection method to reduce resonant power supply noise by injecting the adequate amount of charge into the supply line of the LSI in response to the current consumption of the core circuit. The proposed circuit is composed of three key components, a voltage drop detector, an injection controller circuit and a canceling capacitor circuit. In addition to the theoretical analysis of the proposed method, the measurement results indicate that our proposed method with active capacitor can realize about 14% noise reduction compared with the original noise amplitude. The proposed circuit consumes 25.2 mW in steady state and occupies 0.182 mm2.