This paper describes a method of reducing substrate noise and random variability utilizing a self-adjusted forward body bias (SA-FBB) circuit. To achieve this, we designed a test chip (130 nm CMOS 3-well) that contained an on-chip oscilloscope for detecting dynamic noise from various frequency noise sources, and another test chip (90 nm CMOS 2-well) that contained 10-M transistors for measuring random variability tendencies. Under SA-FBB conditions, it reduced noise by 35.3-69.8% and reduced random variability σ (Ids) by 23.2-57.9%.

This paper proposes Code-Modulated Synchronized (CMS) -OOK modulation scheme for normally-off wireless sensor networks, and demonstrates the operation of the transmitter for the CMS-OOK using 65nm SOTB (Silicon-On Thin Buried Oxide) CMOS technology. Based on investigating RF characteristics of SOTB CMOS, analog part of a CMS-OOK transmitter was designed, fabricated and evaluated in combination with based-FPGA digital part. With code modulation and controlling the carrier frequency by body bias of the SOTB devices, the spectrum of a CMS-OOK transmitter output is widen to achieve -62dBm/MHz peak power spectrum density at 15 MHz bandwidth. Chip of analog part on-board is supplied by 1V for power amplifier and 0.75V for the rest. It consumes average 83µW according to 83nJ/bit at 1kbps data transmission.

A 4-Mb CMOS SRAM with 3.84 µm2 TFT load cells is fabricated using 0.25-µm CMOS technology and achieves an address access time of 6 ns at a supply voltage of 2.7 V. The use of a current sense amplifier that is insensitive to its offset voltage enables the fast access time. A boosted cell array architecture allows low voltage operation of fast SRAM's using TFT load cells.

We fabricated a 16-kB cache macro using 0.35-µm quadruple-metal CMOS technology. This is a 285-MHz, two-port 16-kB (512256 b) cache macro that has a 2-ns access time. This high-speed performance is enabled by a hierarchical bit-line architecture that uses double global bit-line pairs (WGBs), and a high-speed timing-insensitive sense amplifier (ISA) that shortens the access time.

There are various kinds of analog CMOS circuits in microprocessors. IOs, clock distribution circuits including PLL, memories are the main analog circuits. The circuit techniques to achieve low power dissipation combined with high performance in newest prototype chip in the Super H RISC engines are described. A TLB delay can be decreased by using a CAM with a differential amplifier to generate the match signal. The accelerator circuit also helps to speed up the TLB circuit, enabling single-cycle operation. A fabricated 96- mm 2 test chip with the super H architecture using 0. 35-µm four metal CMOS technology is capable of 167-MHz operation at 300 Dhrystone MIPS with 2. 0-W power dissipation.

A 16-Mb CMOS SRAM using 0.4-µm CMOS technology has been developed. This SRAM features common-centroid-geometry (CCG) layout sense amplifiers which shorten the access time by 2.4 ns. A flexible redundancy technique achieves high efficiency without any access penalty. A memory cell with stacked capacitors is fabricated for high soft-error immunity. A 16-Mb SRAM with a chip size of 215 mm2 is fabricated and an address access time of 12.5 ns has been achieved.

An all-CMOS output buffer has been developed. The output buffer is composed of a voltage-follower and a source-follower circuit. The performance of the output buffer is characterized by a low-voltage operation of 1.7 V, a short delay of 1 ns, availability for the wired-OR connection, and adjustability to TTL, ECL, and a reduced swing level (RSL). The output buffer is incorporated into a 64-kb CMOS SRAM. This SRAM has achieved an access time of 4.3 ns at a supply voltage of -3.6 V.

This paper describes a soft error hardened latch (SEH-Latch) scheme that has an error correction function in the fine process. The storage node of the latch is separated into three electrodes and a soft error on one node is collected by the other two nodes despite the large amount and long-lasting influx of radiation-induced charges. To achieve this, we designed two types of SEH-Latch circuits and a standard latch circuit using 130-nm 2-well, 3-well, and also 90-nm 2-well CMOS processes. The proposed circuit demonstrated immunity that was two orders higher through an irradiation test using alpha-particles, and immunity that was one order higher through neutron irradiation. We also demonstrated forward body bias control, which improves alpha-ray immunity by 26% for a standard latch and achieves 44 times improvement in the proposed latch.

This parer describes high-speed CMOS SRAM circuit technologies used in cache memories. In recent years, high-speed SRAM technology has led to higher cycle frequencies, but the rate of increase in the SRAM density has slowed. Operating modes of high-speed SRAMs are compared and the advantage of wave-pipelined SRAMs in terms of cycle frequency is shown. Three types of sense amplifiers used in SRAMs are also compared from the viewpoint of speed and power dissipation. Current sense amplifiers provide high-speed operation with low power dissipation, while latch-type sense amplifiers appear most suitable for ultra-low-power SRAMs. Low voltage operation and size reduction of full CMOS cells are now the most pressing issues in the development of SRAMs for cache memories.

This paper presents a decoupling capacitance boosting method for the resonant supply noise reduction by fast voltage hopping of DVS systems. The proposed method utilizes a foot transistor as a switch between a conventional decoupling capacitor (decap) and GND. The switching controls of the foot transistor depending on the supply noise states achieve an effective noise reduction as well as fast settling time compared with the conventional passive decaps. The measurement results of a test chip fabricated in a 0.18 µm CMOS technology show 12X boost of effective decap value, and 65.8% supply noise reduction with 96% settling time improvement.

This paper presents an on-chip resonant supply noise canceller utilizing parasitic capacitance of sleep blocks. The test chip was fabricated in a 0.18 µm CMOS process and measurement results show 43.3% and 12.5% supply noise reduction on the abrupt supply voltage switching and the abrupt wake-up of a sleep block, respectively. The proposed method requires 1.5% area overhead for four 100 k-gate blocks, which is 7.1 X noise reduction efficient comparing with the conventional decap for the same power supply noise, while achieves 47% improvement of settling time. These results make fast switching of power mode possible for dynamic voltage scaling and power gating.

A highly reliable single-poly flash technology named ie-Flash (inverse gate electrode Flash), which can be embedded in a standard CMOS process without any process modifications, has been developed. The ie-flash cell consists of two elementary cells for OR-logical reading, resulting in significant improvement of reliability. 5 V-programming with 1 ms duration and 1.2 V-read operation of 35 bit memory modules fabricated by a 0.14 µ m CMOS process is demonstrated. This flash technology will extends not only testing cost reduction of the system-on-a chip by replacing laser-link but also provides flexibility of programmable logic applications.

Circuit techniques for realizing low-voltage and low-power SoCs for 90-nm CMOS technology and beyond are described. A proposed SAFBB (self-adjusted forward body bias techniques), ATC (Asymmetric Three transistor Cell) DRAM, and ADC using an offset canceling comparator deal with leakage and variability issues for these technologies. A 32-bit adder using SAFBB attained 353-µA at 400-MHz operation at 0.5-V supply voltage, and 1 Mb memory array using ATC DRAM cells achieved 1.5 mA at 50 MHz, 0.5 V. The 4-bit ADC attained 2 Gsample/s operation at a supply voltage of 0.9 V.

A high-performance microprocessor-compatible small size full CMOS SRAM cell technology for under 1.8-V operation has been developed. Less than 1-µm spacing between the n and pMOSFETs is achieved by using a retrograde well combined with SSS-OSELO technology. To connect the gates of a driver nMOSFET and a load pMOSFET directly, a 0.3-µm n-gate load pMOSFET, formed by amorphous-Si-film through-channel implantation, is merged with a 0.25-µm p-gate pMOSFET for the peripheral circuits. The memory cell area is reduced by using a mask-free contact process for the local interconnect, which includes titanium-nitride wet-etching using a plasma-TEOS silicone-dioxide mask. The newly developed memory cell was demonstrated using 0.25-µm CMOS process technology. A 6.93-µm2 and 1-V operation full CMOS SRAM cell with a high-performance circuit was achieved by a simple fabrication process.

Switched parasitic capacitors of sleep blocks with a tri-mode power gating structure are implemented to reduce on-chip resonant supply noise in 1.2 V, 65 nm standard CMOS process. The tri-mode power gating structure makes it possible to store charge into the parasitic capacitance of the power gated blocks. The proposed method achieves 53.1% and 57.9% noise reduction for wake-up noise and 130 MHz periodic supply noise, respectively. It also realizes noise cancelling without discharging time before using parasitic capacitors of sleep blocks, and shows 8.4x boost of the effective capacitance value with 2.1% chip area overhead. The proposed method can save the chip area for reducing resonant supply noise more effectively.

An embedded cache memory for low power RISC microprocessors is described. An automatic-power-save architecture (APSA) enables the cache memory to operate with high speed at high frequencies, and with low power dissipation at low frequencies. A pulsed word technique (PWT) and an isolated bit line technique (IBLT) reduce the power dissipation of the cache memory effectively. Using these three techniques, the power dissipation of the cache memory is reduced to almost 60% of the conventional cache memory at 60 MHz and to 20% at a clock frequency of 10 MHz. An 8 KByte test chip using 0.5 µm CMOS technology was fabricated, and it achieves 80 MHz operation at a supply voltage of 3.1 V, and 8 mW operation at a supply voltage of 2.5 V at 10 MHz.

A 32bit CPU, which can operate more than 15 years with 220mAH Li battery, or eternally operate with an energy harvester of in-door light is presented. The CPU was fabricated by using 65nm SOTB CMOS technology (Silicon on Thin Buried oxide) where gate length is 60nm and BOX layer thickness is 10nm. The threshold voltage was designed to be as low as 0.19V so that the CPU operates at over threshold region, even at lower supply voltages down to 0.22V. Large reverse body bias up to -2.5V can be applied to bodies of SOTB devices without increasing gate induced drain leak current to reduce the sleep current of the CPU. It operated at 14MHz and 0.35V with the lowest energy of 13.4 pJ/cycle. The sleep current of 0.14µA at 0.35V with the body bias voltage of -2.5V was obtained. These characteristics are suitable for such new applications as energy harvesting sensor network systems, and long lasting wearable computers.