A hierarchical timing adjuster that operates with intermittent adjustment has been developed for use in low-power DDR SDRAMs. Intermittent adjustment reduces power consumption in both coarse- and fine-delay circuits. Furthermore, the current-controlled fine-tuning of delay is free of short-circuit current and achieves a resolution of about 0.1 ns. In a design with 0.16-µm node technology, these techniques make the hierarchical timing adjuster able to reduce the operating current to 4.8 mA, which is 20% for the value in a conventional scheme with every-cycle measurement. The proposed timing adjuster achieves a three-cycle lock-in and only generates an internal clock pulse that has coarse resolution in the second cycle. The circuit operates over the range from 60 to 150 MHz, and occupies 0.29 mm2.

A 16-Mb CMOS SRAM using 0.4-µm CMOS technology has been developed. This SRAM features common-centroid-geometry (CCG) layout sense amplifiers which shorten the access time by 2.4 ns. A flexible redundancy technique achieves high efficiency without any access penalty. A memory cell with stacked capacitors is fabricated for high soft-error immunity. A 16-Mb SRAM with a chip size of 215 mm2 is fabricated and an address access time of 12.5 ns has been achieved.