IEICE TRANSACTIONS on Electronics
High-Speed CMOS SRAM Technologies for Cache Applications
Summary :
This parer describes high-speed CMOS SRAM circuit technologies used in cache memories. In recent years, high-speed SRAM technology has led to higher cycle frequencies, but the rate of increase in the SRAM density has slowed. Operating modes of high-speed SRAMs are compared and the advantage of wave-pipelined SRAMs in terms of cycle frequency is shown. Three types of sense amplifiers used in SRAMs are also compared from the viewpoint of speed and power dissipation. Current sense amplifiers provide high-speed operation with low power dissipation, while latch-type sense amplifiers appear most suitable for ultra-low-power SRAMs. Low voltage operation and size reduction of full CMOS cells are now the most pressing issues in the development of SRAMs for cache memories.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E79-C No.6 pp.724-734
- Publication Date
- 1996/06/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section INVITED PAPER (Special Issue on ULSI Memory Technology)
- Category
- Static RAMs
Authors
Keyword
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Koichiro ISHIBASHI, "High-Speed CMOS SRAM Technologies for Cache Applications" in IEICE TRANSACTIONS on Electronics,
vol. E79-C, no. 6, pp. 724-734, June 1996, doi: .
Abstract: This parer describes high-speed CMOS SRAM circuit technologies used in cache memories. In recent years, high-speed SRAM technology has led to higher cycle frequencies, but the rate of increase in the SRAM density has slowed. Operating modes of high-speed SRAMs are compared and the advantage of wave-pipelined SRAMs in terms of cycle frequency is shown. Three types of sense amplifiers used in SRAMs are also compared from the viewpoint of speed and power dissipation. Current sense amplifiers provide high-speed operation with low power dissipation, while latch-type sense amplifiers appear most suitable for ultra-low-power SRAMs. Low voltage operation and size reduction of full CMOS cells are now the most pressing issues in the development of SRAMs for cache memories.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e79-c_6_724/_p
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@ARTICLE{e79-c_6_724,
author={Koichiro ISHIBASHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={High-Speed CMOS SRAM Technologies for Cache Applications},
year={1996},
volume={E79-C},
number={6},
pages={724-734},
abstract={This parer describes high-speed CMOS SRAM circuit technologies used in cache memories. In recent years, high-speed SRAM technology has led to higher cycle frequencies, but the rate of increase in the SRAM density has slowed. Operating modes of high-speed SRAMs are compared and the advantage of wave-pipelined SRAMs in terms of cycle frequency is shown. Three types of sense amplifiers used in SRAMs are also compared from the viewpoint of speed and power dissipation. Current sense amplifiers provide high-speed operation with low power dissipation, while latch-type sense amplifiers appear most suitable for ultra-low-power SRAMs. Low voltage operation and size reduction of full CMOS cells are now the most pressing issues in the development of SRAMs for cache memories.},
keywords={},
doi={},
ISSN={},
month={June},}
Copy
TY - JOUR
TI - High-Speed CMOS SRAM Technologies for Cache Applications
T2 - IEICE TRANSACTIONS on Electronics
SP - 724
EP - 734
AU - Koichiro ISHIBASHI
PY - 1996
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E79-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 1996
AB - This parer describes high-speed CMOS SRAM circuit technologies used in cache memories. In recent years, high-speed SRAM technology has led to higher cycle frequencies, but the rate of increase in the SRAM density has slowed. Operating modes of high-speed SRAMs are compared and the advantage of wave-pipelined SRAMs in terms of cycle frequency is shown. Three types of sense amplifiers used in SRAMs are also compared from the viewpoint of speed and power dissipation. Current sense amplifiers provide high-speed operation with low power dissipation, while latch-type sense amplifiers appear most suitable for ultra-low-power SRAMs. Low voltage operation and size reduction of full CMOS cells are now the most pressing issues in the development of SRAMs for cache memories.
ER -
English
