We report the control of threshold voltage (Vth) for low voltage (5V) operation in OFET by using double gate dielectric layers composed of poly (vinyl cinnamate) and SiO2. We succeeded in realizing a driving voltage of -5V and Vth shift by c.a. 1.0V. And programmed Vth was almost unchanged for 104s, where the relative change of Vth remains more than 99%.

An output voltage-current equation of charge pump DC-DC voltage multiplier using diodes is provided to cover wide clock frequency and output current ranges for designing energy harvester operating at a near-threshold voltage or in sub-threshold region. Equivalent circuits in slow and fast switching limits are extracted. The effective threshold voltage of the diode in slow switching limit is also derived as a function of electrical characteristics of the diodes, such as the saturation current and voltage slope parameter, and design parameters such as the number of stages, capacitance per stage, parasitic capacitance at the top plate of the main boosting capacitor, and the clock frequency. The model is verified compared with SPICE simulation.

We integrate a pressure sensing capacitor and a low operation voltage OFET to develop a pressure sensor. The OFET was used as a readout device and an external pressure was loaded on the sensing capacitor. The OFET operates at less than 5 V and the change in the drain current in response to the pressure load (100 kPa) is two orders of magnitude.

An application of laser annealing process, which is used to form the shallow P-type Base junction for 20-V planar power MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) is proposed. We demonstrated that the fabricated devices integrated with laser annealing process have superior electrical characteristics than those fabricated according to the standard process. Moreover, the threshold voltage variation of the devices applied by the new annealing process is effectively suppressed. This is due to that a uniform impurity distribution at the channel region is achieved by adopting laser annealing. Laser annealing technology can be applied as a reliable, effective, and advantageous process for the low-voltage power MOSFETs.

In this paper, we propose a low-power circuit-shared static flip-flop (CS2FF) for extremely low power digital VLSIs. The CS2FF consists of five static NORs and two inverters (INVs). The CS2FF utilizes a positive edge of a buffered clock signal, which is generated from a root clock, to take data into a master latch and a negative edge of the root clock to hold the data in a slave latch. The total number of transistors is only 24, which is the same as the conventional transmission-gate flip flop (TGFF) used in the most standard cell libraries. SPICE simulations in 0.18-µm standard CMOS process demonstrated that our proposed CS2FF achieved clock-to-Q delay of 18.3ns, setup time of 10.0ns, hold time of 5.5ns, and power dissipation of 9.7nW at 1-MHz clock frequency and 0.5-V power supply. The physical design area increased by 16% and power dissipation was reduced by 13% compared with those of conventional TGFF. Measurement results demonstrated that our proposed CS2FF can operate at 0.352V with extremely low energy of 5.93fJ.

An all-digital time-domain ADC, abbreviated as TAD, is presented in this paper. All-digital structure is intrinsically compatible with the scaling of CMOS technology, and can satisfy the great demand of miniaturized and low-voltage sensor interface. The proposed TAD uses an inverter-based Ring-Delay-Line (RDL) to transform the input signal from voltage domain to time domain. The voltage-modulated time information is then digitized by a composite architecture namely “4-Clock-Edge-Shift Construction” (4CKES). TAD features superior voltage sensitivity and 1st-order noise shaping, which can significantly simplify the power-hungry pre-conditioning circuits. Reconfigurable resolution can be easily achieved by applying different sampling rates. A TAD prototype is fabricated in 65nm CMOS, and consumes a small area of 0.016mm2. It achieves a voltage resolution of 82.7µV/LSB at 10MS/s and 1.96µV/LSB at 200kS/s in a narrow input range of 0.1Vpp, merely under 0.6V supply. The highest SNR of TAD prototype is 61.36dB in 20kHz bandwidth at 10MS/s. This paper also analyzes the nonideal effects of TAD and discusses the potential solutions. As the principal drawback, nonlinearity of TAD can be compensated by the differential-setup and digital calibration.

This paper proposes an ultra-low-voltage, wide signal swing, and clock-scalable differential dynamic amplifier using a common-mode voltage detection technique. The essential characteristics of an amplifier, such as gain, linearity, power consumption, noise, etc., are analyzed. In measurement, the proposed dynamic amplifier achieves a 13dB gain with less than 1dB drop over a differential output signal swing of 340mVpp with a supply voltage of 0.5V. The attained maximum operating frequency is 700MHz. With a 0.7V supply, the gain increases to 16dB with a signal swing of 700mVpp. The prototype amplifier is fabricated in 90nm CMOS technology with the low threshold voltage and the deep N-well options.

This paper reports a 65nm 8Mb spin transfer torque magnetoresistance random access memory (STT-MRAM) operating at a single supply voltage with a process-variation-tolerant sense amplifier. The proposed sense amplifier comprises a boosted-gate nMOS and negative-resistance pMOSs as loads, which maximizes the readout margin at any process corner. The STT-MRAM achieves a cycle time of 1.9µs (=0.526MHz) at 0.38V. The operating power is 1.70µW at this voltage. The minimum energy per access is 1.12 pJ/bit when the supply voltage is 0.44V. The proposed STT-MRAM operates at a lower energy than an SRAM when the utilization of the memory bandwidth is 14% or less.

The data rate of VLSI interconnections has been increasing according to the demand for high-speed operation of semiconductors such as CPUs. To realize high performance VLSI systems, high-speed data communication has become an important factor. However, at high-speed data rates, it is difficult to achieve accurate communication without bit errors because of inter-symbol interference (ISI). This paper presents high-speed data communication techniques for VLSI systems using Tomlinson-Harashima Precoding (THP). Since THP can eliminate the ISI with limiting average and peak power of transmitter signaling, THP is suitable for implementing advanced low-voltage VLSI systems. In this paper, 4-PAM (Pulse amplitude modulation) with THP has been employed to achieve high-speed data communication in VLSI systems. Simulation results show that THP can remove the ISI without increasing peak and average power of a transmitter. Moreover, simulation results clarify that multiple-valued data communication is very effective to reduce implementation costs for realizing high-speed serial links.

We report the successful operation of a low-power arithmetic logic unit (ALU) based on a low-voltage rapid single-flux-quantum (LV-RSFQ) logic circuit, whereby a dc bias current is fed to circuits from lowered constant-voltage sources through small resistors. Both the static and dynamic energy consumptions are reduced because of the reduction in the amplitudes of voltage pulses across the Josephson junctions, with a trade-off of slightly slower switching speeds. The designed bias voltage was set to 0.25mV, which is one-tenth that of our standard RSFQ circuit design. We investigated several issues related to such low-voltage operation, including margins and timing design. To achieve successful operation, we tuned the circuit parameters in the logic gate design and carefully controlled the timing by considering the interference of pulse signals. We show test results for the low-voltage ALU in on-chip high-speed testing. The circuit was fabricated using the AIST Nb/AlOx/Nb Advanced Process with a critical current density of 10kA/cm2. We verified that arithmetic and logical operations were correctly implemented and obtained dc bias margins of 18% at a target clock frequency of 20GHz and achieved a maximum clock frequency of 28GHz with a power consumption of 28µW. These experimental results indicate energy efficiency of 3.6 times that of the standard RSFQ circuit design.

This paper presents an adaptive cache architecture for wide-range reliable low-voltage operations. The proposed associativity-reconfigurable cache consists of pairs of cache ways so that it can exploit the recovery feature of the novel 7T/14T SRAM cell. Each pair has two operating modes that can be selected based upon the required voltage level of current operating conditions: normal mode for high performance and dependable mode for reliable low-voltage operations. We can obtain reliable low-voltage operations by application of the dependable mode to weaker pairs that cannot operate reliably at low voltages. Meanwhile leaving stronger pairs in the normal mode, we can minimize performance losses. Our chip measurement results show that the proposed cache can trade off its associativity with the minimum operating voltage. Moreover, it can decrease the minimum operating voltage by 140 mV achieving 67.48% and 26.70% reduction of the power dissipation and energy per instruction. Processor simulation results show that designing the on-chip caches using the proposed scheme results in 2.95% maximum IPC losses, but it can be chosen various performance levels. Area estimation results show that the proposed cache adds area overhead of 1.61% and 5.49% in 32-KB and 256-KB caches, respectively.

A gated sense amplifier (GSA) consisting of a low-Vt gated preamplifier (LGA) and a high-Vt sense amplifier (SA) is proposed. The gating scheme of the LGA enables quick amplification of an initial cell signal voltage (vS0) because of its low Vt and prevents the cell signal from degrading due to interference noise between data lines. As for a conventional sense amplifier (CSA), this new type of noise causes sensing error, and the noise-generation mechanism was clarified for the first time by analysis of vS0. The high-Vt SA holds the amplified signal and keeps subthreshold current low. Moreover, the gating scheme of the low-Vt MOSFETs in the LGA drives the I/O line quickly. The GSA thus simultaneously achieves fast sensing, low-leakage data holding, and fast I/O driving, even for sub-1-V mid-point sensing. The GSA is promising for future sub-1-V gigabit dynamic random-access memory (DRAM) because of reduced variations in the threshold voltage of MOSFETs; thus, the offset voltage of the LGA is reduced. The effectiveness of the GSA was verified with a 70-nm 512-Mbit DRAM chip. It demonstrated row access time (tRCD) of 16.4 ns and read access (tAA) of 14.3 ns at array voltage of 0.9 V.

In order to quickly discharge the electrostatic discharge (ESD) energy, an unassisted low-voltage-trigger ESD protection structure is proposed in this work. Under transmission line pulsing (TLP) stress, the trigger voltage, turn-on speed and second breakdown current can be obviously improved, as compared with the traditional protection structure. Moreover there is no need to add any extra mask or do any process modification for the new structure. The proposed structure has been verified in foundry's 0.18-µm CMOS process.

A low-voltage quadrature up-conversion CMOS mixer for 5-GHz wireless communication applications is designed with a TSMC 0.18-µm process. The fold-switching technique is used to implement the low-voltage double balanced quadrature mixer. A miniature lumped-element microwave broadband rat-race hybrid and RLC shift network are used for the local oscillator and the intermediate frequency port design, respectively. The measured results demonstrate that the mixer can reach a high conversion gain, a low noise figure (NF), and a high linearity. The mixer exhibits improvement in noise, conversion gain, and image rejection. The mixer shows a conversion gain of 16 dB, a noise figure of 12.8 dB, an image rejection of 45 dB, while dissipating 15.5 mW for an operating voltage at 1 V.

In this paper, a low-voltage, wide-common-mode-range and high-CMRR OTA is presented. The proposed OTA consists of two circuit blocks; one is the input stage and operates as a differential level shifter, and the other is a highly linear output stage. Furthermore, the OTA can be operated in both weak and strong inversion regions. The proposed OTA is evaluated through Star-HSPICE with 0.18 µm CMOS device parameters (LEVEL53). Simulation results demonstrate a CMRR of 158 dB, a common-mode-input-range of 65 mV to 720 mV and a current consumption of 1.2 µA when VDD=0.8 V.

A high-speed and ultra-low-voltage divide-by-4/5 counter with dynamic floating input D flip-flop (DFIDFF) is presented in this paper. The proposed DFIDFF and control logic gates are merged to reduce effective capacitance of internal and external nodes, and increase the operating speed of divide-by-4/5 counter. The proposed divide-by-4/5 counter is fabricated in a 0.13-µm CMOS process. The measured maximum operating frequency and power consumption of the counter are 600 MHz and 8.35 µW at a 0.5 V supply voltage. HSPICE simulations demonstrate that the proposed counter (divide-by-4) reduces power-delay product (PDP) by 37%, 71%, and 57% from those of the TGFF counter, Yang's counter [1], and the E-TSPC counter [2], respectively.

In this paper, a novel 800 mV beta-multiplier reference current source circuit is presented. In order to cope with the narrow input common-mode range of the Opamp in the reference circuit, the resistive voltage divider was employed. High gain Opamp was designed to compensate for the intrinsic low output resistance of the MOS transistors. The proposed reference circuit was designed in a standard 0.18 µm CMOS process with nominal Vth of 420 mV and -450 mV for n-MOS and p-MOS transistor, respectively. The total power consumption including Opamp is less than 50 µW.

In this letter, two OTAs with MOSFETs operating in the weak inversion region are proposed. One of the OTAs uses the exponential-logarithm transformation algorithm. Furthermore, the other realizes the high-linearity characteristics due to a small fluctuation of the common-terminal voltage of differential pair. The performance of the proposed OTAs was confirmed by HSPICE simulation.

This paper proposes a low-voltage high-speed sample-and-hold (S/H) structure with excellent power efficiency. Based on the switched-opamp technique, an inverse-flip-around architecture which maximizes the feedback factor is employed in the proposed S/H. A skew-insensitive double-sampling mechanism is presented to increase the throughput by a factor of two while eliminating the timing mismatch associated with double-sampling circuits. Furthermore, a dual-input dual-output opamp is proposed to incorporate double-sampling into the switched-opamp based S/H. This opamp also removes the memory effect in double-sampling circuitry and features fast turn-on time to improve the speed performance in switched-opamp circuits. Simulation results using a 0.13-µm CMOS process model demonstrates the proposed S/H circuit has a total-harmonic-distortion of -67.3 dB up to 250 MSample/s and a 0.8 VPP input range at 0.8 V supply. The power consumption is 3.5 mW and the figure-of-merit is only 7.4 fJ/step.

This work presents an ultra-low-voltage ultra-low-power weak inversion composite MOS transistor. The steady state power consumption and the linear swing signal of the composite transistor are comparable to a single transistor, whereas presenting very high output impedance. This work also presents two interesting applications for the composite transistor; a 1:1 current mirror and an extremely low power temperature sensor, a thermistor. Both implementations are verified in a standard 0.35-µm TSMC CMOS process. The current mirror presents high output impedance, comparable to the cascode configuration, which is highly desirable to improve gain and PSRR of amplifiers circuits, and mirroring relation in current mirrors.