An Application of Laser Annealing Process in Low-Voltage Planar Power MOSFETs
Summary :
An application of laser annealing process, which is used to form the shallow P-type Base junction for 20-V planar power MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) is proposed. We demonstrated that the fabricated devices integrated with laser annealing process have superior electrical characteristics than those fabricated according to the standard process. Moreover, the threshold voltage variation of the devices applied by the new annealing process is effectively suppressed. This is due to that a uniform impurity distribution at the channel region is achieved by adopting laser annealing. Laser annealing technology can be applied as a reliable, effective, and advantageous process for the low-voltage power MOSFETs.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E99-C No.5 pp.601-603
- Publication Date
- 2016/05/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E99.C.601
- Type of Manuscript
- BRIEF PAPER
- Category
- Semiconductor Materials and Devices
Authors
Yi CHEN
University of the Ryukyus
Tatsuya OKADA
University of the Ryukyus
Takashi NOGUCHI
University of the Ryukyus
Keyword
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Yi CHEN, Tatsuya OKADA, Takashi NOGUCHI, "An Application of Laser Annealing Process in Low-Voltage Planar Power MOSFETs" in IEICE TRANSACTIONS on Electronics,
vol. E99-C, no. 5, pp. 601-603, May 2016, doi: 10.1587/transele.E99.C.601.
Abstract: An application of laser annealing process, which is used to form the shallow P-type Base junction for 20-V planar power MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) is proposed. We demonstrated that the fabricated devices integrated with laser annealing process have superior electrical characteristics than those fabricated according to the standard process. Moreover, the threshold voltage variation of the devices applied by the new annealing process is effectively suppressed. This is due to that a uniform impurity distribution at the channel region is achieved by adopting laser annealing. Laser annealing technology can be applied as a reliable, effective, and advantageous process for the low-voltage power MOSFETs.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E99.C.601/_p
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@ARTICLE{e99-c_5_601,
author={Yi CHEN, Tatsuya OKADA, Takashi NOGUCHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={An Application of Laser Annealing Process in Low-Voltage Planar Power MOSFETs},
year={2016},
volume={E99-C},
number={5},
pages={601-603},
abstract={An application of laser annealing process, which is used to form the shallow P-type Base junction for 20-V planar power MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) is proposed. We demonstrated that the fabricated devices integrated with laser annealing process have superior electrical characteristics than those fabricated according to the standard process. Moreover, the threshold voltage variation of the devices applied by the new annealing process is effectively suppressed. This is due to that a uniform impurity distribution at the channel region is achieved by adopting laser annealing. Laser annealing technology can be applied as a reliable, effective, and advantageous process for the low-voltage power MOSFETs.},
keywords={},
doi={10.1587/transele.E99.C.601},
ISSN={1745-1353},
month={May},}
Copy
TY - JOUR
TI - An Application of Laser Annealing Process in Low-Voltage Planar Power MOSFETs
T2 - IEICE TRANSACTIONS on Electronics
SP - 601
EP - 603
AU - Yi CHEN
AU - Tatsuya OKADA
AU - Takashi NOGUCHI
PY - 2016
DO - 10.1587/transele.E99.C.601
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E99-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2016
AB - An application of laser annealing process, which is used to form the shallow P-type Base junction for 20-V planar power MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) is proposed. We demonstrated that the fabricated devices integrated with laser annealing process have superior electrical characteristics than those fabricated according to the standard process. Moreover, the threshold voltage variation of the devices applied by the new annealing process is effectively suppressed. This is due to that a uniform impurity distribution at the channel region is achieved by adopting laser annealing. Laser annealing technology can be applied as a reliable, effective, and advantageous process for the low-voltage power MOSFETs.
ER -
English
