An application of laser annealing process, which is used to form the P-type Base junction for high-performance low-voltage power MOSFETs (Metal Oxide Semiconductor Field Effect Transistors), is proposed. An equivalent shallow-junction structure for P-Base junction with uniform impurity distribution is achieved by adopting green laser annealing of pulsed mode. Higher impurity activation for the shallow junction has been achieved by the laser annealing of melted phase than by conventional RTA (Rapid Thermal Annealing) of solid phase. The application of the laser annealing technology in the fabrication process of Low-Voltage U-MOSFET is also examined.

An application of laser annealing process, which is used to form the shallow P-type Base junction for 20-V planar power MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) is proposed. We demonstrated that the fabricated devices integrated with laser annealing process have superior electrical characteristics than those fabricated according to the standard process. Moreover, the threshold voltage variation of the devices applied by the new annealing process is effectively suppressed. This is due to that a uniform impurity distribution at the channel region is achieved by adopting laser annealing. Laser annealing technology can be applied as a reliable, effective, and advantageous process for the low-voltage power MOSFETs.

The electrical characteristics of sealed CMOSFETs with gates crossing sources/drains at 90 and 45 are experimentally investigated using test devices fabricated by an n-well CMOS process with trench isolation. Gain factors of surface-channel 90 and 45 n-MOSFETs can be estimated by a simple correction theory based on the combination of a center MOSFET and two edge MOSFETs. However, relatively large departures from the theory are observed in buried-channel 90 and 45 p-MOSFETs with widths less than the channel length. The difference between n- and p-MOSFETs is mainly due to the channel type. Other basic device parameters such as saturation drain currents, threshold voltages, subthreshold swings, maximum substrate currents and substrate-voltage dependence of threshold voltages are also measured and qualitatively explained.