An Application of Laser Annealing Process in Low-Voltage Power MOSFETs
Summary :
An application of laser annealing process, which is used to form the P-type Base junction for high-performance low-voltage power MOSFETs (Metal Oxide Semiconductor Field Effect Transistors), is proposed. An equivalent shallow-junction structure for P-Base junction with uniform impurity distribution is achieved by adopting green laser annealing of pulsed mode. Higher impurity activation for the shallow junction has been achieved by the laser annealing of melted phase than by conventional RTA (Rapid Thermal Annealing) of solid phase. The application of the laser annealing technology in the fabrication process of Low-Voltage U-MOSFET is also examined.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E99-C No.5 pp.516-521
- Publication Date
- 2016/05/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E99.C.516
- Type of Manuscript
- Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
- Category
Authors
Yi CHEN
University of the Ryukyus
Tatsuya OKADA
University of the Ryukyus
Takashi NOGUCHI
University of the Ryukyus
Keyword
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Yi CHEN, Tatsuya OKADA, Takashi NOGUCHI, "An Application of Laser Annealing Process in Low-Voltage Power MOSFETs" in IEICE TRANSACTIONS on Electronics,
vol. E99-C, no. 5, pp. 516-521, May 2016, doi: 10.1587/transele.E99.C.516.
Abstract: An application of laser annealing process, which is used to form the P-type Base junction for high-performance low-voltage power MOSFETs (Metal Oxide Semiconductor Field Effect Transistors), is proposed. An equivalent shallow-junction structure for P-Base junction with uniform impurity distribution is achieved by adopting green laser annealing of pulsed mode. Higher impurity activation for the shallow junction has been achieved by the laser annealing of melted phase than by conventional RTA (Rapid Thermal Annealing) of solid phase. The application of the laser annealing technology in the fabrication process of Low-Voltage U-MOSFET is also examined.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E99.C.516/_p
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@ARTICLE{e99-c_5_516,
author={Yi CHEN, Tatsuya OKADA, Takashi NOGUCHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={An Application of Laser Annealing Process in Low-Voltage Power MOSFETs},
year={2016},
volume={E99-C},
number={5},
pages={516-521},
abstract={An application of laser annealing process, which is used to form the P-type Base junction for high-performance low-voltage power MOSFETs (Metal Oxide Semiconductor Field Effect Transistors), is proposed. An equivalent shallow-junction structure for P-Base junction with uniform impurity distribution is achieved by adopting green laser annealing of pulsed mode. Higher impurity activation for the shallow junction has been achieved by the laser annealing of melted phase than by conventional RTA (Rapid Thermal Annealing) of solid phase. The application of the laser annealing technology in the fabrication process of Low-Voltage U-MOSFET is also examined.},
keywords={},
doi={10.1587/transele.E99.C.516},
ISSN={1745-1353},
month={May},}
Copy
TY - JOUR
TI - An Application of Laser Annealing Process in Low-Voltage Power MOSFETs
T2 - IEICE TRANSACTIONS on Electronics
SP - 516
EP - 521
AU - Yi CHEN
AU - Tatsuya OKADA
AU - Takashi NOGUCHI
PY - 2016
DO - 10.1587/transele.E99.C.516
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E99-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2016
AB - An application of laser annealing process, which is used to form the P-type Base junction for high-performance low-voltage power MOSFETs (Metal Oxide Semiconductor Field Effect Transistors), is proposed. An equivalent shallow-junction structure for P-Base junction with uniform impurity distribution is achieved by adopting green laser annealing of pulsed mode. Higher impurity activation for the shallow junction has been achieved by the laser annealing of melted phase than by conventional RTA (Rapid Thermal Annealing) of solid phase. The application of the laser annealing technology in the fabrication process of Low-Voltage U-MOSFET is also examined.
ER -
English
