Electrical Characteristics of n- and p-MOSFETs with Gates Crossing Source/Drain Regions at 90<cd0216b.gif>and 45<cd0216b.gif>

Takashi OHZONE; Naoko MATSUYAMA

Electrical Characteristics of n- and p-MOSFETs with Gates Crossing Source/Drain Regions at 90and 45

Takashi OHZONE, Naoko MATSUYAMA

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The electrical characteristics of sealed CMOSFETs with gates crossing sources/drains at 90 and 45 are experimentally investigated using test devices fabricated by an n-well CMOS process with trench isolation. Gain factors of surface-channel 90 and 45 n-MOSFETs can be estimated by a simple correction theory based on the combination of a center MOSFET and two edge MOSFETs. However, relatively large departures from the theory are observed in buried-channel 90 and 45 p-MOSFETs with widths less than the channel length. The difference between n- and p-MOSFETs is mainly due to the channel type. Other basic device parameters such as saturation drain currents, threshold voltages, subthreshold swings, maximum substrate currents and substrate-voltage dependence of threshold voltages are also measured and qualitatively explained.

Publication: IEICE TRANSACTIONS on Electronics Vol.E79-C No.2 pp.172-178

Publication Date: 1996/02/25

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Type of Manuscript: Special Section PAPER (Special Issue on Microelectronic Test Structures)

Category: Device and Circuit Characterization

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Takashi OHZONE, Naoko MATSUYAMA, "Electrical Characteristics of n- and p-MOSFETs with Gates Crossing Source/Drain Regions at 90and 45" in IEICE TRANSACTIONS on Electronics, vol. E79-C, no. 2, pp. 172-178, February 1996, doi: .
Abstract: The electrical characteristics of sealed CMOSFETs with gates crossing sources/drains at 90 and 45 are experimentally investigated using test devices fabricated by an n-well CMOS process with trench isolation. Gain factors of surface-channel 90 and 45 n-MOSFETs can be estimated by a simple correction theory based on the combination of a center MOSFET and two edge MOSFETs. However, relatively large departures from the theory are observed in buried-channel 90 and 45 p-MOSFETs with widths less than the channel length. The difference between n- and p-MOSFETs is mainly due to the channel type. Other basic device parameters such as saturation drain currents, threshold voltages, subthreshold swings, maximum substrate currents and substrate-voltage dependence of threshold voltages are also measured and qualitatively explained.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e79-c_2_172/_p

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@ARTICLE{e79-c_2_172,
author={Takashi OHZONE, Naoko MATSUYAMA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Electrical Characteristics of n- and p-MOSFETs with Gates Crossing Source/Drain Regions at 90and 45},
year={1996},
volume={E79-C},
number={2},
pages={172-178},
abstract={The electrical characteristics of sealed CMOSFETs with gates crossing sources/drains at 90 and 45 are experimentally investigated using test devices fabricated by an n-well CMOS process with trench isolation. Gain factors of surface-channel 90 and 45 n-MOSFETs can be estimated by a simple correction theory based on the combination of a center MOSFET and two edge MOSFETs. However, relatively large departures from the theory are observed in buried-channel 90 and 45 p-MOSFETs with widths less than the channel length. The difference between n- and p-MOSFETs is mainly due to the channel type. Other basic device parameters such as saturation drain currents, threshold voltages, subthreshold swings, maximum substrate currents and substrate-voltage dependence of threshold voltages are also measured and qualitatively explained.},
keywords={},
doi={},
ISSN={},
month={February},}

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TY - JOUR
TI - Electrical Characteristics of n- and p-MOSFETs with Gates Crossing Source/Drain Regions at 90and 45
T2 - IEICE TRANSACTIONS on Electronics
SP - 172
EP - 178
AU - Takashi OHZONE
AU - Naoko MATSUYAMA
PY - 1996
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E79-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 1996
AB - The electrical characteristics of sealed CMOSFETs with gates crossing sources/drains at 90 and 45 are experimentally investigated using test devices fabricated by an n-well CMOS process with trench isolation. Gain factors of surface-channel 90 and 45 n-MOSFETs can be estimated by a simple correction theory based on the combination of a center MOSFET and two edge MOSFETs. However, relatively large departures from the theory are observed in buried-channel 90 and 45 p-MOSFETs with widths less than the channel length. The difference between n- and p-MOSFETs is mainly due to the channel type. Other basic device parameters such as saturation drain currents, threshold voltages, subthreshold swings, maximum substrate currents and substrate-voltage dependence of threshold voltages are also measured and qualitatively explained.
ER -