The electrical characteristics of sealed CMOSFETs with gates crossing sources/drains at 90 and 45 are experimentally investigated using test devices fabricated by an n-well CMOS process with trench isolation. Gain factors of surface-channel 90 and 45 n-MOSFETs can be estimated by a simple correction theory based on the combination of a center MOSFET and two edge MOSFETs. However, relatively large departures from the theory are observed in buried-channel 90 and 45 p-MOSFETs with widths less than the channel length. The difference between n- and p-MOSFETs is mainly due to the channel type. Other basic device parameters such as saturation drain currents, threshold voltages, subthreshold swings, maximum substrate currents and substrate-voltage dependence of threshold voltages are also measured and qualitatively explained.