In this letter, a linear variable resistor circuit using an FG-MOSFET (floating-gate MOSFET) is proposed. This is based on Schlarmann's variable resistor and is very simple. The advantage of the proposed circuit is a wide-input range. The utility of the proposed circuit was confirmed by HSPICE simulation with 1.2 µm CMOS process parameters. The simulation results are reported in this letter.

In this letter, two kinds of MOS operational transconductance amplifiers (OTAs) based on combiners are presented. Each OTA has the following advantages; one of the proposed OTAs (OTA-1) can be operated at low supply voltage and the other OTA (OTA-2) has wide bandwidth. Through HSPICE simulations with a standard 0.35 µm CMOS device parameters, the operation under the supply voltage of 1.5 V for OTA-1 and the -3 dB bandwidth of several gigahertz for OTA-2 are confirmed.

In this paper, we present a new analog multiplier with wide input range which is achieved by utilizing the variable threshold voltage characteristics of FG-MOSFET's. The performance of the proposed multiplier is evaluated through HSPICE simulation with 2.0 µm CMOS process parameters. From HSPICE simulation, we can find that the proposed multiplier can be operated at the supply voltage of 3.0 V with 3.0 Vp-p input range. Namely, the input voltage range of the multiplier is equal to the supply voltage. The maximum power consumption of the multiplier is 8.8 mW. The THD is 1.36% under the condition that the amplitude of the input signal is 3.0 Vp-p and the frequency is 1 MHz. Under the same condition, the linearity error is less than 0.5%. The -3 dB bandwidth of the proposed multiplier is 23 MHz.

In this letter, we describe a low power current to time converter for wireless sensor networks. The proposed circuit has some advantages of high linearity and wide measurement range. From the evaluation using HSPICE with 0.18 µm CMOS device parameters, the output differential error for the input current variation is approximately 0.1 µs/nA under the condition that the current is varied from 100 nA to 500 nA. The idle power consumption is approximately zero.

This paper describes a new model of multiple-valued immune network based on biological immune response network. The model of multiple-valued immune network is formulated based on the analogy with the interaction between B cells and T cells in immune system. The model has a property that resembles immune response quite well. The immunity of the network is simulated and makes several experimentally testable predictions. Simulation results are given to a letter recognition application of the network and compared with binary ones. The simulations show that, beside the advantages of less categories, improved memory pattern and good memory capacity, the multiple-valued immune network produces a stronger noise immunity than binary one.

In this paper, optimization and verification of the current-mode multiple-valued digit ORNS arithmetic circuits are presented. The multiple-valued digit ORNS is the redundant number system using digit values in the multiple-valued logic and it realizes the full-parallel calculation without any ripple carry propagation. First, the 4-bit addition and multiplication algorithms employing the multiple-valued digit ORNS are optimized through logic-level analyses. In the multiplier, the maximum digit value and the number of modulo operations in series are successfully reduced from 49 to 29 and from 3 to 2, respectively, by the arrangement of addition lines. Next, circuit components such as a current mirror are verified using HSPICE. The proposed switched current mirror which has functions of a current mirror and an analog switch is effective to reduce the minimum operation voltage by about 0.13 volt. Besides an ordinary strong-inversion region, the circuit components operated under the weak-inversion region show good simulation results with the unit current of 10 nanoamperes, and it brings both of the lower power dissipation and the stable operation under the lower supply voltage.

In this letter, we propose high-speed binary to residue converters for moduli 2n, 2n 1 without using look-up table. For integration of residue arithmetic circuit using a signed-digit (SD) number representation with ordinary binary system, the proposed circuits carry out the efficient conversion. Using SD adders instead of ordinary adders that are used in conventional binary to residue converter, the high-speed conversion without the carry propagation can be achieved. Thus, the proposed converter is independent of the size of modulus and can speed up the binary to residue conversion. On the simulation, the conversion delay times are 1.78 ns for modulus 210-1 and 1.73 ns for modulus 210+1 under the condition of 0.6 µm CMOS technology, respectively. The active area of the proposed converter for moduli 210 1 is 335 µm325 µm.

A neuron-MOS transistor (νMOS) is applied to current-mode multi-valued logic (MVL) circuits. First, a novel low-voltage and low-power νMOS current mirror is presented. Then, a threshold detector and a quaternary T-gate using the proposed νMOS current mirrors are proposed. The minimum output voltage of the νMOS current mirror is decreased by VT (threshold voltage), compared with the conventional double cascode current mirror. The νMOS threshold detector is built on a νMOS current comparator originally composed of νMOS current mirrors. It has a high output swing and sharp transfer characteristics. The gradient of the proposed comparator output in the transfer region can be increased 6.3-fold compared with that in the conventional comparator. Along with improved operation of the novel current comparator, the discriminative ability of the proposed νMOS threshold detector is also increased. The performances of the proposed circuits are validated by HSPICE with Motorola 1.5 µm CMOS device parameters. Furthermore, the operation of a νMOS current mirror is also confirmed through experiments on test chips fabricated by VDEC*. The active area of the proposed νMOS current mirror is 63 µm 51 µm.

In this paper, we propose a midpoint-validation method which improves the generalization of Support Vector Machine. The proposed method creates midpoint data, as well as a turning adjustment parameter of Support Vector Machine using midpoint data and previous training data. We compare its performance with the original Support Vector Machine, Multilayer Perceptron, Radial Basis Function Neural Network and also tested our proposed method on several benchmark problems. The results obtained from the simulation shows the effectiveness of the proposed method.

In this letter, we propose a sample and hold circuit (S/H circuit) with the clock boost technique and the input signal tracking technique. The proposed circuit block generates the clock with the amplitude of VDD + vin, and the clock is used to control the MOS switch. By applying this circuit to a S/H circuit, we can deal with the rail-to-rail signal with maintaining low distortion. Furthermore, the hold error caused by the charge injection and the clock feedthrough can be also reduced by using the dummy switch. The Star-HSPICE simulation results are reported in this letter.

The aim of this study is to present electrooculogram signals that can be used for human computer interface efficiently. Establishing an efficient alternative channel for communication without overt speech and hand movements is important to increase the quality of life for patients suffering from Amyotrophic Lateral Sclerosis or other illnesses that prevent correct limb and facial muscular responses. In this paper, we introduce the gaze estimation system of electrooculogram signals. Using this system, the electrooculogram signals can be recorded when the patients focused on each direct. All these recorded signals could be analyzed using math-method and the mathematical model will be set up. Gaze estimation can be recognized using electrooculogram signals follow these models.

A calibrating analog-to digital (A/D) converter employing a T-Model neural network is described. The T-Model neural-based A/D converter architecure is presented with particular emphasis on the elimination of local minimum of the Hopfield neural network. Furthermore, a teacher forcing algorithm is presented and used to synthesize the A/D converter and correct errors of the converter due to offset and device mismatch. An experimental A/D converter using standard 5-µm CMOS discrete IC circuits demonstrates high-performance analog-to-digital conversion and calibrating.

This paper describes a novel input-free MOS VT extractor circuit. The circuit consists of a bias voltage block and a novel VT extractor block. The proposed VT extractor block has the advantages of the ground-referenced output, low influence of the nonideality, few numbers of transistors and no influence of the PMOS process. The PSpice simulations show the supply voltage range and the bias voltage range of the proposed circuit are wider than those of Johnson's or Wang's.

In this paper, a voltage-controlled linear variable resistor (VCLVR) using a floating-gate MOSFET (FG-MOSFET) is proposed. First, the grounded VCLVR realization is discussed. The proposed circuit consists of only an ordinary MOSFET and an FG-MOSFET. The advantages of the proposed VCLVR are low-power and wide-input range and also the power consumption of the proposed VCLVR is the same as an ordinary passive resistor. The performance of the proposed circuits are confirmed by HSPICE simulations with a standard 0.6 µm CMOS process parameters. Simulations of the proposed VCLVR demonstrate a resistance value of 40 kΩ to 338 kΩ and an input range of 4.34 V within THD of less than 1.1%. Next, we proposed a new floating node linear variable resistor using the proposed VCLVR. The performance of the circuit is also evaluated through HSPICE.

In this paper, a four-quadrant analog multiplier consisting of four neuron-MOS transistors and two load resistors is proposed. The proposed multiplier can be operated at only 1 V. Furthermore, the input range of the multiplier is equal to 100% of the supply voltage. The theoretical harmonic distortion caused by mobility degradation and device mismatchs is derived in detail. The performance of the proposed multiplier is characterized through HSPICE simulations with a standard 2.0 µm CMOS process with a double-poly layer. Simulations of the proposed multiplier demonstrate that the linearity error of 0.77% and a total harmonic distortion of 0.62% are obtained with full-scale input conditions. The maximum power consumption and 3 dB bandwidth are 9.56 µW and 107 MHz, respectively. The active area of the proposed multiplier is 210 µm 140 µm.

In this letter, my proposals for a Floating node voltage-controlled Variable Resistor circuit (FVR) are based upon its advantages as linear and compact. The performance of the proposed circuit was confirmed by PSpice simulation. The simulation results are reported in this letter.

In this paper, we propose the low voltage CMOS current mode reference circuit using self-regulator with adaptive biasing technique. It drastically reduces the line sensitivity (LS) of the output voltage and the power supply voltage dependence of the temperature coefficient (TC). The self-regulator used in the proposed circuit adaptively generates the minimum voltage required the reference core circuit following the PVT (process, voltage and temperature) conditions. It makes possible to improve circuit performances instead of slightly increasing minimum power supply voltage. This proposed circuit has been designed and evaluated by SPICE simulation using TSMC 65nm CMOS process with 3.3V (2.5V over-drive) transistor option. From simulation results, LS is reduced to 0.0065%/V under 0.8V < VDD < 3.0V. TC is 67.6ppm/°C under the condition that the temperature range is from -40°C to 125°C and VDD range is from 0.8V to 3.0V. The power supply rejection ratio (PSRR) is less than -80.4dB when VDD is higher than 0.8V and the noise frequency is 100Hz. According to the simulation results, we could confirm that the performances of the proposed circuit are improved compared with the conventional circuit.

This paper describes an N-type and a P-type MOS cascode circuit based on the square-law characteristics of an MOS transistor in saturation region. The transconductance parameter ratios of an upper and a lower MOS transistor are set to be 1: n2 for the N-type MOS cascode circuit and n2: 1 for the P-type MOS cascode circuit. The N and P-type MOS cascode circuits are divided to four types by the difference of connections of input terminals. We consider the input-output relations of each type circuit. The second-order effects of the circuit such as channel length modulation effect, mobility reduction effect and device mismatch are analyzed. As applications, an analog voltage adder and a VT level shifter using MOS cascode circuits are presented. All of the proposed circuits are very simple and consist of only the N and P-type MOS cascode circuits. The proposed circuits aer confirmed by SPICE simulation with MOSIS 1.2µm CMOS process parameters.

The analog inverter for realization of the NOT function is the indispensable circuit element in the voltage-mode analog and digital signal processing. In this paper, we propose a novel analog inverter composed of only two neuron-MOS transistors. The analog inverter has the weighted negative feedback mechanism to operate both of neuron-MOS transistors under the saturation region in all input ranges. In verification using HSPICE simulations, the analog inverter performs the high linearity with errors of approximately 40 [mV] in all input ranges, particularly errors of less than 19 [mV] in more than 90% of input ranges. And, the maximum power consumption of the analog inverter is less than 1.5 [µW] although a peak of a standard CMOS inverter is around 30 [µW] under the supply voltage of 3.0 [V]. These good stability and results are produced by the negative feedback. Furthermore, fabrication costs of the analog inverters can be kept at the minimum because neuron-MOS transistors can be actualized in a conventional CMOS process without any additional process. For applications of the analog inverter, the voltage comparator with high noise margins is designed and is applied to the two-input MAX and the two-input MIN circuits in the voltage-mode. The MAX and the MIN circuits for realization of the MAX and the MIN functions, respectively, can be composed of total ten transistors each. They also perform well in verifications. On the basis of the proposed circuits, almost all of voltage-mode multi-valued logic circuits with high-performance can be realized like present binary logic systems. And, the proposed circuits can give full play to the high linearity and advantages for the arbitrary transformation of signal forms in the analog signal processing such as the fuzzy control.

This paper describes the Fractional-N All Digital Frequency Locked Loop (ADFLL) with Robustness for PVT variation and its application for the microcontroller unit. The conventional FLL is difficult to achieve the required specification by using the fine CMOS process. Especially, the conventional FLL has some problems such as unexpected operation and long lock time that are caused by PVT variation. To overcome these problems, we propose a new ADFLL which uses dynamic selecting digital filter coefficients. The proposed ADFLL was evaluatied through the HSPICE simulation and fabricating chips using a 0.13 µm CMOS process. From these results, we observed the proposed ADFLL has robustness for PVT variation by using dynamic selecting digital filter coefficient, and the lock time is improved up to 57%, clock jitter is 0.85 nsec.