IEICE TRANSACTIONS on Fundamentals
1: n2 MOS Cascode Circuits and Their Applications
Summary :
This paper describes an N-type and a P-type MOS cascode circuit based on the square-law characteristics of an MOS transistor in saturation region. The transconductance parameter ratios of an upper and a lower MOS transistor are set to be 1: n2 for the N-type MOS cascode circuit and n2: 1 for the P-type MOS cascode circuit. The N and P-type MOS cascode circuits are divided to four types by the difference of connections of input terminals. We consider the input-output relations of each type circuit. The second-order effects of the circuit such as channel length modulation effect, mobility reduction effect and device mismatch are analyzed. As applications, an analog voltage adder and a VT level shifter using MOS cascode circuits are presented. All of the proposed circuits are very simple and consist of only the N and P-type MOS cascode circuits. The proposed circuits aer confirmed by SPICE simulation with MOSIS 1.2µm CMOS process parameters.
- Publication
- IEICE TRANSACTIONS on Fundamentals Vol.E79-A No.12 pp.2159-2165
- Publication Date
- 1996/12/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- PAPER
- Category
- Analog Signal Processing
Authors
Keyword
Latest Issue
Copyrights notice of machine-translated contents
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Cite this
Copy
Koichi TANNO, Okihiko ISHIZUKA, Zheng TANG, "1: n2 MOS Cascode Circuits and Their Applications" in IEICE TRANSACTIONS on Fundamentals,
vol. E79-A, no. 12, pp. 2159-2165, December 1996, doi: .
Abstract: This paper describes an N-type and a P-type MOS cascode circuit based on the square-law characteristics of an MOS transistor in saturation region. The transconductance parameter ratios of an upper and a lower MOS transistor are set to be 1: n2 for the N-type MOS cascode circuit and n2: 1 for the P-type MOS cascode circuit. The N and P-type MOS cascode circuits are divided to four types by the difference of connections of input terminals. We consider the input-output relations of each type circuit. The second-order effects of the circuit such as channel length modulation effect, mobility reduction effect and device mismatch are analyzed. As applications, an analog voltage adder and a VT level shifter using MOS cascode circuits are presented. All of the proposed circuits are very simple and consist of only the N and P-type MOS cascode circuits. The proposed circuits aer confirmed by SPICE simulation with MOSIS 1.2µm CMOS process parameters.
URL: https://global.ieice.org/en_transactions/fundamentals/10.1587/e79-a_12_2159/_p
Copy
@ARTICLE{e79-a_12_2159,
author={Koichi TANNO, Okihiko ISHIZUKA, Zheng TANG, },
journal={IEICE TRANSACTIONS on Fundamentals},
title={1: n2 MOS Cascode Circuits and Their Applications},
year={1996},
volume={E79-A},
number={12},
pages={2159-2165},
abstract={This paper describes an N-type and a P-type MOS cascode circuit based on the square-law characteristics of an MOS transistor in saturation region. The transconductance parameter ratios of an upper and a lower MOS transistor are set to be 1: n2 for the N-type MOS cascode circuit and n2: 1 for the P-type MOS cascode circuit. The N and P-type MOS cascode circuits are divided to four types by the difference of connections of input terminals. We consider the input-output relations of each type circuit. The second-order effects of the circuit such as channel length modulation effect, mobility reduction effect and device mismatch are analyzed. As applications, an analog voltage adder and a VT level shifter using MOS cascode circuits are presented. All of the proposed circuits are very simple and consist of only the N and P-type MOS cascode circuits. The proposed circuits aer confirmed by SPICE simulation with MOSIS 1.2µm CMOS process parameters.},
keywords={},
doi={},
ISSN={},
month={December},}
Copy
TY - JOUR
TI - 1: n2 MOS Cascode Circuits and Their Applications
T2 - IEICE TRANSACTIONS on Fundamentals
SP - 2159
EP - 2165
AU - Koichi TANNO
AU - Okihiko ISHIZUKA
AU - Zheng TANG
PY - 1996
DO -
JO - IEICE TRANSACTIONS on Fundamentals
SN -
VL - E79-A
IS - 12
JA - IEICE TRANSACTIONS on Fundamentals
Y1 - December 1996
AB - This paper describes an N-type and a P-type MOS cascode circuit based on the square-law characteristics of an MOS transistor in saturation region. The transconductance parameter ratios of an upper and a lower MOS transistor are set to be 1: n2 for the N-type MOS cascode circuit and n2: 1 for the P-type MOS cascode circuit. The N and P-type MOS cascode circuits are divided to four types by the difference of connections of input terminals. We consider the input-output relations of each type circuit. The second-order effects of the circuit such as channel length modulation effect, mobility reduction effect and device mismatch are analyzed. As applications, an analog voltage adder and a VT level shifter using MOS cascode circuits are presented. All of the proposed circuits are very simple and consist of only the N and P-type MOS cascode circuits. The proposed circuits aer confirmed by SPICE simulation with MOSIS 1.2µm CMOS process parameters.
ER -
English
