IEICE TRANSACTIONS on Fundamentals
Wide-Input Range Variable Resistor Circuit Using an FG-MOSFET
Summary :
In this letter, a linear variable resistor circuit using an FG-MOSFET (floating-gate MOSFET) is proposed. This is based on Schlarmann's variable resistor and is very simple. The advantage of the proposed circuit is a wide-input range. The utility of the proposed circuit was confirmed by HSPICE simulation with 1.2 µm CMOS process parameters. The simulation results are reported in this letter.
- Publication
- IEICE TRANSACTIONS on Fundamentals Vol.E86-A No.12 pp.3294-3296
- Publication Date
- 2003/12/01
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- LETTER
- Category
- Analog Signal Processing
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Muneo KUSHIMA, Koichi TANNO, Okihiko ISHIZUKA, "Wide-Input Range Variable Resistor Circuit Using an FG-MOSFET" in IEICE TRANSACTIONS on Fundamentals,
vol. E86-A, no. 12, pp. 3294-3296, December 2003, doi: .
Abstract: In this letter, a linear variable resistor circuit using an FG-MOSFET (floating-gate MOSFET) is proposed. This is based on Schlarmann's variable resistor and is very simple. The advantage of the proposed circuit is a wide-input range. The utility of the proposed circuit was confirmed by HSPICE simulation with 1.2 µm CMOS process parameters. The simulation results are reported in this letter.
URL: https://global.ieice.org/en_transactions/fundamentals/10.1587/e86-a_12_3294/_p
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@ARTICLE{e86-a_12_3294,
author={Muneo KUSHIMA, Koichi TANNO, Okihiko ISHIZUKA, },
journal={IEICE TRANSACTIONS on Fundamentals},
title={Wide-Input Range Variable Resistor Circuit Using an FG-MOSFET},
year={2003},
volume={E86-A},
number={12},
pages={3294-3296},
abstract={In this letter, a linear variable resistor circuit using an FG-MOSFET (floating-gate MOSFET) is proposed. This is based on Schlarmann's variable resistor and is very simple. The advantage of the proposed circuit is a wide-input range. The utility of the proposed circuit was confirmed by HSPICE simulation with 1.2 µm CMOS process parameters. The simulation results are reported in this letter.},
keywords={},
doi={},
ISSN={},
month={December},}
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TY - JOUR
TI - Wide-Input Range Variable Resistor Circuit Using an FG-MOSFET
T2 - IEICE TRANSACTIONS on Fundamentals
SP - 3294
EP - 3296
AU - Muneo KUSHIMA
AU - Koichi TANNO
AU - Okihiko ISHIZUKA
PY - 2003
DO -
JO - IEICE TRANSACTIONS on Fundamentals
SN -
VL - E86-A
IS - 12
JA - IEICE TRANSACTIONS on Fundamentals
Y1 - December 2003
AB - In this letter, a linear variable resistor circuit using an FG-MOSFET (floating-gate MOSFET) is proposed. This is based on Schlarmann's variable resistor and is very simple. The advantage of the proposed circuit is a wide-input range. The utility of the proposed circuit was confirmed by HSPICE simulation with 1.2 µm CMOS process parameters. The simulation results are reported in this letter.
ER -
English
