IEICE TRANSACTIONS on Fundamentals
Low-Power and Wide-Input Range Voltage Controlled Linear Variable Resistor Using an FG-MOSFET and Its Application
Summary :
In this paper, a voltage-controlled linear variable resistor (VCLVR) using a floating-gate MOSFET (FG-MOSFET) is proposed. First, the grounded VCLVR realization is discussed. The proposed circuit consists of only an ordinary MOSFET and an FG-MOSFET. The advantages of the proposed VCLVR are low-power and wide-input range and also the power consumption of the proposed VCLVR is the same as an ordinary passive resistor. The performance of the proposed circuits are confirmed by HSPICE simulations with a standard 0.6 µm CMOS process parameters. Simulations of the proposed VCLVR demonstrate a resistance value of 40 kΩ to 338 kΩ and an input range of 4.34 V within THD of less than 1.1%. Next, we proposed a new floating node linear variable resistor using the proposed VCLVR. The performance of the circuit is also evaluated through HSPICE.
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- IEICE TRANSACTIONS on Fundamentals Vol.E86-A No.2 pp.342-349
- Publication Date
- 2003/02/01
- Publicized
- Online ISSN
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- Type of Manuscript
- Special Section PAPER (Special Section on Analog Circuit Techniques and Related Topics)
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Muneo KUSHIMA, Koichi TANNO, Okihiko ISHIZUKA, "Low-Power and Wide-Input Range Voltage Controlled Linear Variable Resistor Using an FG-MOSFET and Its Application" in IEICE TRANSACTIONS on Fundamentals,
vol. E86-A, no. 2, pp. 342-349, February 2003, doi: .
Abstract: In this paper, a voltage-controlled linear variable resistor (VCLVR) using a floating-gate MOSFET (FG-MOSFET) is proposed. First, the grounded VCLVR realization is discussed. The proposed circuit consists of only an ordinary MOSFET and an FG-MOSFET. The advantages of the proposed VCLVR are low-power and wide-input range and also the power consumption of the proposed VCLVR is the same as an ordinary passive resistor. The performance of the proposed circuits are confirmed by HSPICE simulations with a standard 0.6 µm CMOS process parameters. Simulations of the proposed VCLVR demonstrate a resistance value of 40 kΩ to 338 kΩ and an input range of 4.34 V within THD of less than 1.1%. Next, we proposed a new floating node linear variable resistor using the proposed VCLVR. The performance of the circuit is also evaluated through HSPICE.
URL: https://global.ieice.org/en_transactions/fundamentals/10.1587/e86-a_2_342/_p
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@ARTICLE{e86-a_2_342,
author={Muneo KUSHIMA, Koichi TANNO, Okihiko ISHIZUKA, },
journal={IEICE TRANSACTIONS on Fundamentals},
title={Low-Power and Wide-Input Range Voltage Controlled Linear Variable Resistor Using an FG-MOSFET and Its Application},
year={2003},
volume={E86-A},
number={2},
pages={342-349},
abstract={In this paper, a voltage-controlled linear variable resistor (VCLVR) using a floating-gate MOSFET (FG-MOSFET) is proposed. First, the grounded VCLVR realization is discussed. The proposed circuit consists of only an ordinary MOSFET and an FG-MOSFET. The advantages of the proposed VCLVR are low-power and wide-input range and also the power consumption of the proposed VCLVR is the same as an ordinary passive resistor. The performance of the proposed circuits are confirmed by HSPICE simulations with a standard 0.6 µm CMOS process parameters. Simulations of the proposed VCLVR demonstrate a resistance value of 40 kΩ to 338 kΩ and an input range of 4.34 V within THD of less than 1.1%. Next, we proposed a new floating node linear variable resistor using the proposed VCLVR. The performance of the circuit is also evaluated through HSPICE.},
keywords={},
doi={},
ISSN={},
month={February},}
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TY - JOUR
TI - Low-Power and Wide-Input Range Voltage Controlled Linear Variable Resistor Using an FG-MOSFET and Its Application
T2 - IEICE TRANSACTIONS on Fundamentals
SP - 342
EP - 349
AU - Muneo KUSHIMA
AU - Koichi TANNO
AU - Okihiko ISHIZUKA
PY - 2003
DO -
JO - IEICE TRANSACTIONS on Fundamentals
SN -
VL - E86-A
IS - 2
JA - IEICE TRANSACTIONS on Fundamentals
Y1 - February 2003
AB - In this paper, a voltage-controlled linear variable resistor (VCLVR) using a floating-gate MOSFET (FG-MOSFET) is proposed. First, the grounded VCLVR realization is discussed. The proposed circuit consists of only an ordinary MOSFET and an FG-MOSFET. The advantages of the proposed VCLVR are low-power and wide-input range and also the power consumption of the proposed VCLVR is the same as an ordinary passive resistor. The performance of the proposed circuits are confirmed by HSPICE simulations with a standard 0.6 µm CMOS process parameters. Simulations of the proposed VCLVR demonstrate a resistance value of 40 kΩ to 338 kΩ and an input range of 4.34 V within THD of less than 1.1%. Next, we proposed a new floating node linear variable resistor using the proposed VCLVR. The performance of the circuit is also evaluated through HSPICE.
ER -
English
