In this paper, a four-quadrant analog multiplier consisting of four neuron-MOS transistors and two load resistors is proposed. The proposed multiplier can be operated at only 1 V. Furthermore, the input range of the multiplier is equal to 100% of the supply voltage. The theoretical harmonic distortion caused by mobility degradation and device mismatchs is derived in detail. The performance of the proposed multiplier is characterized through HSPICE simulations with a standard 2.0 µm CMOS process with a double-poly layer. Simulations of the proposed multiplier demonstrate that the linearity error of 0.77% and a total harmonic distortion of 0.62% are obtained with full-scale input conditions. The maximum power consumption and
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Copy
Koichi TANNO, Okihiko ISHIZUKA, Zheng TANG, "A 1-V, 1-Vp-p Input Range, Four-Quadrant Analog Multiplier Using Neuron-MOS Transistors" in IEICE TRANSACTIONS on Electronics,
vol. E82-C, no. 5, pp. 750-757, May 1999, doi: .
Abstract: In this paper, a four-quadrant analog multiplier consisting of four neuron-MOS transistors and two load resistors is proposed. The proposed multiplier can be operated at only 1 V. Furthermore, the input range of the multiplier is equal to 100% of the supply voltage. The theoretical harmonic distortion caused by mobility degradation and device mismatchs is derived in detail. The performance of the proposed multiplier is characterized through HSPICE simulations with a standard 2.0 µm CMOS process with a double-poly layer. Simulations of the proposed multiplier demonstrate that the linearity error of 0.77% and a total harmonic distortion of 0.62% are obtained with full-scale input conditions. The maximum power consumption and
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e82-c_5_750/_p
Copy
@ARTICLE{e82-c_5_750,
author={Koichi TANNO, Okihiko ISHIZUKA, Zheng TANG, },
journal={IEICE TRANSACTIONS on Electronics},
title={A 1-V, 1-Vp-p Input Range, Four-Quadrant Analog Multiplier Using Neuron-MOS Transistors},
year={1999},
volume={E82-C},
number={5},
pages={750-757},
abstract={In this paper, a four-quadrant analog multiplier consisting of four neuron-MOS transistors and two load resistors is proposed. The proposed multiplier can be operated at only 1 V. Furthermore, the input range of the multiplier is equal to 100% of the supply voltage. The theoretical harmonic distortion caused by mobility degradation and device mismatchs is derived in detail. The performance of the proposed multiplier is characterized through HSPICE simulations with a standard 2.0 µm CMOS process with a double-poly layer. Simulations of the proposed multiplier demonstrate that the linearity error of 0.77% and a total harmonic distortion of 0.62% are obtained with full-scale input conditions. The maximum power consumption and
keywords={},
doi={},
ISSN={},
month={May},}
Copy
TY - JOUR
TI - A 1-V, 1-Vp-p Input Range, Four-Quadrant Analog Multiplier Using Neuron-MOS Transistors
T2 - IEICE TRANSACTIONS on Electronics
SP - 750
EP - 757
AU - Koichi TANNO
AU - Okihiko ISHIZUKA
AU - Zheng TANG
PY - 1999
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E82-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 1999
AB - In this paper, a four-quadrant analog multiplier consisting of four neuron-MOS transistors and two load resistors is proposed. The proposed multiplier can be operated at only 1 V. Furthermore, the input range of the multiplier is equal to 100% of the supply voltage. The theoretical harmonic distortion caused by mobility degradation and device mismatchs is derived in detail. The performance of the proposed multiplier is characterized through HSPICE simulations with a standard 2.0 µm CMOS process with a double-poly layer. Simulations of the proposed multiplier demonstrate that the linearity error of 0.77% and a total harmonic distortion of 0.62% are obtained with full-scale input conditions. The maximum power consumption and
ER -