An Ultra-Low-Voltage Ultra-Low-Power Weak Inversion Composite MOS Transistor: Concept and Applications

Luis H.C. FERREIRA; Tales C. PIMENTA; Robson L. MORENO

doi:10.1093/ietele/e91-c.4.662

An Ultra-Low-Voltage Ultra-Low-Power Weak Inversion Composite MOS Transistor: Concept and Applications

Luis H.C. FERREIRA, Tales C. PIMENTA, Robson L. MORENO

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This work presents an ultra-low-voltage ultra-low-power weak inversion composite MOS transistor. The steady state power consumption and the linear swing signal of the composite transistor are comparable to a single transistor, whereas presenting very high output impedance. This work also presents two interesting applications for the composite transistor; a 1:1 current mirror and an extremely low power temperature sensor, a thermistor. Both implementations are verified in a standard 0.35-µm TSMC CMOS process. The current mirror presents high output impedance, comparable to the cascode configuration, which is highly desirable to improve gain and PSRR of amplifiers circuits, and mirroring relation in current mirrors.

Publication: IEICE TRANSACTIONS on Electronics Vol.E91-C No.4 pp.662-665

Publication Date: 2008/04/01

Publicized

Online ISSN: 1745-1353

DOI: 10.1093/ietele/e91-c.4.662

Type of Manuscript: LETTER

Category: Electronic Circuits

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Luis H.C. FERREIRA, Tales C. PIMENTA, Robson L. MORENO, "An Ultra-Low-Voltage Ultra-Low-Power Weak Inversion Composite MOS Transistor: Concept and Applications" in IEICE TRANSACTIONS on Electronics, vol. E91-C, no. 4, pp. 662-665, April 2008, doi: 10.1093/ietele/e91-c.4.662.
Abstract: This work presents an ultra-low-voltage ultra-low-power weak inversion composite MOS transistor. The steady state power consumption and the linear swing signal of the composite transistor are comparable to a single transistor, whereas presenting very high output impedance. This work also presents two interesting applications for the composite transistor; a 1:1 current mirror and an extremely low power temperature sensor, a thermistor. Both implementations are verified in a standard 0.35-µm TSMC CMOS process. The current mirror presents high output impedance, comparable to the cascode configuration, which is highly desirable to improve gain and PSRR of amplifiers circuits, and mirroring relation in current mirrors.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e91-c.4.662/_p

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@ARTICLE{e91-c_4_662,
author={Luis H.C. FERREIRA, Tales C. PIMENTA, Robson L. MORENO, },
journal={IEICE TRANSACTIONS on Electronics},
title={An Ultra-Low-Voltage Ultra-Low-Power Weak Inversion Composite MOS Transistor: Concept and Applications},
year={2008},
volume={E91-C},
number={4},
pages={662-665},
abstract={This work presents an ultra-low-voltage ultra-low-power weak inversion composite MOS transistor. The steady state power consumption and the linear swing signal of the composite transistor are comparable to a single transistor, whereas presenting very high output impedance. This work also presents two interesting applications for the composite transistor; a 1:1 current mirror and an extremely low power temperature sensor, a thermistor. Both implementations are verified in a standard 0.35-µm TSMC CMOS process. The current mirror presents high output impedance, comparable to the cascode configuration, which is highly desirable to improve gain and PSRR of amplifiers circuits, and mirroring relation in current mirrors.},
keywords={},
doi={10.1093/ietele/e91-c.4.662},
ISSN={1745-1353},
month={April},}

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TY - JOUR
TI - An Ultra-Low-Voltage Ultra-Low-Power Weak Inversion Composite MOS Transistor: Concept and Applications
T2 - IEICE TRANSACTIONS on Electronics
SP - 662
EP - 665
AU - Luis H.C. FERREIRA
AU - Tales C. PIMENTA
AU - Robson L. MORENO
PY - 2008
DO - 10.1093/ietele/e91-c.4.662
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E91-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 2008
AB - This work presents an ultra-low-voltage ultra-low-power weak inversion composite MOS transistor. The steady state power consumption and the linear swing signal of the composite transistor are comparable to a single transistor, whereas presenting very high output impedance. This work also presents two interesting applications for the composite transistor; a 1:1 current mirror and an extremely low power temperature sensor, a thermistor. Both implementations are verified in a standard 0.35-µm TSMC CMOS process. The current mirror presents high output impedance, comparable to the cascode configuration, which is highly desirable to improve gain and PSRR of amplifiers circuits, and mirroring relation in current mirrors.
ER -