This work presents an ultra-low-voltage ultra-low-power weak inversion composite MOS transistor. The steady state power consumption and the linear swing signal of the composite transistor are comparable to a single transistor, whereas presenting very high output impedance. This work also presents two interesting applications for the composite transistor; a 1:1 current mirror and an extremely low power temperature sensor, a thermistor. Both implementations are verified in a standard 0.35-µm TSMC CMOS process. The current mirror presents high output impedance, comparable to the cascode configuration, which is highly desirable to improve gain and PSRR of amplifiers circuits, and mirroring relation in current mirrors.

This paper describes a CMOS voltage reference that makes use of weak inversion CMOS transistors and linear resistors, without the need for bipolar transistors. Its operation is analogous to the bandgap reference voltage, but the reference voltage is based on the threshold voltage of an nMOS transistor. The circuit implemented using 0.35 µm n-well CMOS TSMC process generates a reference of 741 mV under just 390 nW for a power supply of only 950 mV. The circuit presented a variation of 39 ppm/ for the -20 to +80 temperature range, and produced a line regulation of 25 mV/V for a power supply of up to 3 V.