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Shoji SHUKURI Kazumasa YANAGISAWA Koichiro ISHIBASHI
A highly reliable single-poly flash technology named ie-Flash (inverse gate electrode Flash), which can be embedded in a standard CMOS process without any process modifications, has been developed. The ie-flash cell consists of two elementary cells for OR-logical reading, resulting in significant improvement of reliability. 5 V-programming with 1 ms duration and 1.2 V-read operation of 35 bit memory modules fabricated by a 0.14 µ m CMOS process is demonstrated. This flash technology will extends not only testing cost reduction of the system-on-a chip by replacing laser-link but also provides flexibility of programmable logic applications.
Yusuke KANNO Hiroyuki MIZUNO Nobuhiro OODAIRA Yoshihiko YASU Kazumasa YANAGISAWA
A power-aware interconnect circuit design--called µI/O architecture--has been developed to provide low-cost system solutions for System-on-Chip (SoC) and System-in-Package (SiP) technologies. The µI/O architecture provides a common interface throughout the module enabling hierarchical I/O design for SoC and SiP. The hierarchical I/O design allows the driver size to be optimized without increasing design complexity. Moreover, it includes a signal-level converter for integrating wide-voltage-range circuit blocks and a signal wall function for turning off each block independently--without invalid signal transmission--by using an internal power switch.
Takao WATANABE Ryo FUJITA Kazumasa YANAGISAWA
The advantages of DRAM-logic integration were demonstrated through a comparison with a conventional separate-chip architecture. Although the available DRAM capacity is restricted by chip size, the integration provides a high throughput and low I/O-power dissipation due to a large number of on-chip I/O lines with small load capacitance. These features result in smaller chip counts as well as lower power dissipation for systems requiring high data throughput and having relatively small memory capacity. The chip count and I/O-power dissipation were formulated for multimedia systems. For the 3-D computer graphics system with a frame of 12801024 pixels requiring a 60-Mbit memory capacity and a 4.8-Gbyte/s throughput, DRAM-logic integration enabled a 1/12 smaller chip count and 1/10 smaller I/O-power dissipation. For the 200-MIPS hand-held portable computing system that had a 16-Mbit memory capacity and required a 416-Mbyte/s throughput, DRAM-logic integration enabled a 1/4 smaller chip count and 1/17 smaller I/O-power dissipation. In addition, innovative architectures that enhance the advantages of DRAM-logic integration were discussed. Pipeline access for a DRAM macro having a cascaded multi-bank structure, an on-chip cache DRAM, and parallel processing with a reduced supply voltage were introduced.
Kan TAKEUCHI Kazumasa YANAGISAWA Kazuko SAKAMOTO Teruya TANAKA
The optimum tier architectures for ASICs are investigated by using a methodology for predicting packing efficiency of a logic block (the ratio of total cell area to the block area including space regions between cells). In the methodology based on Rent's rule, (1) the empirical parameters required for the prediction are derived from the results of our ASIC products. (2) The concept of logic distance, which is expressed in units of the number of cells rather than the absolute net length, is introduced. (3) Not only performance constraints but also reliability constraints are incorporated. These allow us to make a quantitative comparison of the packing efficiency between various cell and tier structures. It is found that, for mega-cell blocks, all minimum-pitch layer architecture with buffer insertion is expected to give more than 20% reduction in block areas compared to the minimum-pitch + bi-pitch architecture, while satisfying the performance and reliability constraints.
Hisako SATO Mariko OHTSUKA Kazuya MAKABE Yuichi KONDO Kazumasa YANAGISAWA Peter M. LEE
This paper presents an efficient application of hot-carrier reliability simulation to delay libraries of 0.18µm and 0.14µm gate length logic products. Using analysis of simple primitive inverter cells, a design rule was developed in restricting signal rise time, and delay libraries of actual products were screened to check whether the rise time restrictions were met. At 200MHz, maximum rise time (0-100%) triseMAX was 0.8nsec (17% of duty) under Δtd/td = 5%. For a 800,000 net product, only 25 simulations were done (each less than one minute CPU time) for the internal devices with screening done for this logic process. 30 nets were caught, but judged reliable due to their reduced duty.