To realize a high-density on-chip memory, the authors have proposed a novel logic-process-compatible memory cell. This cell consists of two logic transistors, and placing a planar MIM (metal insulator metal) capacitor on a copper wire above the transistors produces a memory area of 26 F2, which is approximately 60% smaller than a 6T SRAM cell. A suitable cell-bias design and a dual precharge scheme solve the coupling problem inherent in the cell and allow standard logic transistors to be used. This cell--applying the proposed schemes--can handle 10-ns cycle time at a bit-line voltage of 0.7 V. The random cycle is about three times faster than that of a conventional VBL precharge scheme. These results indicate that the umbrella cell is a strong candidate for providing a high-density memory for SOC applications.

A power-aware interconnect circuit design--called µI/O architecture--has been developed to provide low-cost system solutions for System-on-Chip (SoC) and System-in-Package (SiP) technologies. The µI/O architecture provides a common interface throughout the module enabling hierarchical I/O design for SoC and SiP. The hierarchical I/O design allows the driver size to be optimized without increasing design complexity. Moreover, it includes a signal-level converter for integrating wide-voltage-range circuit blocks and a signal wall function for turning off each block independently--without invalid signal transmission--by using an internal power switch.