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A 24-30GHz Power Amplifier with >20-dBm Psat and <0.1-dB AM-AM Distortion for 5G Applications in 130-nm SiGe BiCMOS
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This paper presents a power amplifier (PA) designed as a part of a transceiver front-end fabricated in 130-nm SiGe BiCMOS. The PA shares its output antenna port with a low noise amplifier using a low-loss transmission/reception switch. The output matching network of the PA is designed to provide high output power, low AM-AM distortion, and uniform performance over frequencies in the range of 24.25-29.5GHz. Measurements of the front-end in TX mode demonstrate peak S21 of 30.3dB at 26.7GHz, S21 3-dB bandwidth of 9.8GHz from 22.2to 32.0GHz, and saturated output power (Psat) above 20dBm with power-added efficiency (PAE) above 22% from 24 to 30GHz. For a 64-QAM 400MHz bandwidth orthogonal frequency division multiplexing (OFDM) signal, -25dBc error vector magnitude (EVM) is measured at an average output power of 12.3dBm and average PAE of 8.8%. The PA achieves a competitive ITRS FoM of 92.9.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E106-C No.11 pp.625-634
- Publication Date
- 2023/11/01
- Publicized
- 2023/05/12
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.2023MMI0003
- Type of Manuscript
- Special Section INVITED PAPER (Special Section on Microwave and Millimeter-Wave Technologies)
- Category
Authors
Chihiro KAMIDAKI
Fujikura Ltd.
Yuma OKUYAMA
Fujikura Ltd.
Tatsuo KUBO
Fujikura Ltd.
Wooram LEE
IBM Thomas J. Watson Research Center
Caglar OZDAG
IBM Thomas J. Watson Research Center
Bodhisatwa SADHU
IBM Thomas J. Watson Research Center
Yo YAMAGUCHI
Fujikura Ltd.
Ning GUAN
Fujikura Ltd.
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Chihiro KAMIDAKI, Yuma OKUYAMA, Tatsuo KUBO, Wooram LEE, Caglar OZDAG, Bodhisatwa SADHU, Yo YAMAGUCHI, Ning GUAN, "A 24-30GHz Power Amplifier with >20-dBm Psat and <0.1-dB AM-AM Distortion for 5G Applications in 130-nm SiGe BiCMOS" in IEICE TRANSACTIONS on Electronics,
vol. E106-C, no. 11, pp. 625-634, November 2023, doi: 10.1587/transele.2023MMI0003.
Abstract: This paper presents a power amplifier (PA) designed as a part of a transceiver front-end fabricated in 130-nm SiGe BiCMOS. The PA shares its output antenna port with a low noise amplifier using a low-loss transmission/reception switch. The output matching network of the PA is designed to provide high output power, low AM-AM distortion, and uniform performance over frequencies in the range of 24.25-29.5GHz. Measurements of the front-end in TX mode demonstrate peak S21 of 30.3dB at 26.7GHz, S21 3-dB bandwidth of 9.8GHz from 22.2to 32.0GHz, and saturated output power (Psat) above 20dBm with power-added efficiency (PAE) above 22% from 24 to 30GHz. For a 64-QAM 400MHz bandwidth orthogonal frequency division multiplexing (OFDM) signal, -25dBc error vector magnitude (EVM) is measured at an average output power of 12.3dBm and average PAE of 8.8%. The PA achieves a competitive ITRS FoM of 92.9.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2023MMI0003/_p
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@ARTICLE{e106-c_11_625,
author={Chihiro KAMIDAKI, Yuma OKUYAMA, Tatsuo KUBO, Wooram LEE, Caglar OZDAG, Bodhisatwa SADHU, Yo YAMAGUCHI, Ning GUAN, },
journal={IEICE TRANSACTIONS on Electronics},
title={A 24-30GHz Power Amplifier with >20-dBm Psat and <0.1-dB AM-AM Distortion for 5G Applications in 130-nm SiGe BiCMOS},
year={2023},
volume={E106-C},
number={11},
pages={625-634},
abstract={This paper presents a power amplifier (PA) designed as a part of a transceiver front-end fabricated in 130-nm SiGe BiCMOS. The PA shares its output antenna port with a low noise amplifier using a low-loss transmission/reception switch. The output matching network of the PA is designed to provide high output power, low AM-AM distortion, and uniform performance over frequencies in the range of 24.25-29.5GHz. Measurements of the front-end in TX mode demonstrate peak S21 of 30.3dB at 26.7GHz, S21 3-dB bandwidth of 9.8GHz from 22.2to 32.0GHz, and saturated output power (Psat) above 20dBm with power-added efficiency (PAE) above 22% from 24 to 30GHz. For a 64-QAM 400MHz bandwidth orthogonal frequency division multiplexing (OFDM) signal, -25dBc error vector magnitude (EVM) is measured at an average output power of 12.3dBm and average PAE of 8.8%. The PA achieves a competitive ITRS FoM of 92.9.},
keywords={},
doi={10.1587/transele.2023MMI0003},
ISSN={1745-1353},
month={November},}
Copy
TY - JOUR
TI - A 24-30GHz Power Amplifier with >20-dBm Psat and <0.1-dB AM-AM Distortion for 5G Applications in 130-nm SiGe BiCMOS
T2 - IEICE TRANSACTIONS on Electronics
SP - 625
EP - 634
AU - Chihiro KAMIDAKI
AU - Yuma OKUYAMA
AU - Tatsuo KUBO
AU - Wooram LEE
AU - Caglar OZDAG
AU - Bodhisatwa SADHU
AU - Yo YAMAGUCHI
AU - Ning GUAN
PY - 2023
DO - 10.1587/transele.2023MMI0003
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E106-C
IS - 11
JA - IEICE TRANSACTIONS on Electronics
Y1 - November 2023
AB - This paper presents a power amplifier (PA) designed as a part of a transceiver front-end fabricated in 130-nm SiGe BiCMOS. The PA shares its output antenna port with a low noise amplifier using a low-loss transmission/reception switch. The output matching network of the PA is designed to provide high output power, low AM-AM distortion, and uniform performance over frequencies in the range of 24.25-29.5GHz. Measurements of the front-end in TX mode demonstrate peak S21 of 30.3dB at 26.7GHz, S21 3-dB bandwidth of 9.8GHz from 22.2to 32.0GHz, and saturated output power (Psat) above 20dBm with power-added efficiency (PAE) above 22% from 24 to 30GHz. For a 64-QAM 400MHz bandwidth orthogonal frequency division multiplexing (OFDM) signal, -25dBc error vector magnitude (EVM) is measured at an average output power of 12.3dBm and average PAE of 8.8%. The PA achieves a competitive ITRS FoM of 92.9.
ER -
English
