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A 24-30GHz Power Amplifier with >20-dBm Psat and <0.1-dB AM-AM Distortion for 5G Applications in 130-nm SiGe BiCMOS

Chihiro KAMIDAKI, Yuma OKUYAMA, Tatsuo KUBO, Wooram LEE, Caglar OZDAG, Bodhisatwa SADHU, Yo YAMAGUCHI, Ning GUAN

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Summary :

This paper presents a power amplifier (PA) designed as a part of a transceiver front-end fabricated in 130-nm SiGe BiCMOS. The PA shares its output antenna port with a low noise amplifier using a low-loss transmission/reception switch. The output matching network of the PA is designed to provide high output power, low AM-AM distortion, and uniform performance over frequencies in the range of 24.25-29.5GHz. Measurements of the front-end in TX mode demonstrate peak S21 of 30.3dB at 26.7GHz, S21 3-dB bandwidth of 9.8GHz from 22.2to 32.0GHz, and saturated output power (Psat) above 20dBm with power-added efficiency (PAE) above 22% from 24 to 30GHz. For a 64-QAM 400MHz bandwidth orthogonal frequency division multiplexing (OFDM) signal, -25dBc error vector magnitude (EVM) is measured at an average output power of 12.3dBm and average PAE of 8.8%. The PA achieves a competitive ITRS FoM of 92.9.

Publication
IEICE TRANSACTIONS on Electronics Vol.E106-C No.11 pp.625-634
Publication Date
2023/11/01
Publicized
2023/05/12
Online ISSN
1745-1353
DOI
10.1587/transele.2023MMI0003
Type of Manuscript
Special Section INVITED PAPER (Special Section on Microwave and Millimeter-Wave Technologies)
Category

Authors

Chihiro KAMIDAKI
  Fujikura Ltd.
Yuma OKUYAMA
  Fujikura Ltd.
Tatsuo KUBO
  Fujikura Ltd.
Wooram LEE
  IBM Thomas J. Watson Research Center
Caglar OZDAG
  IBM Thomas J. Watson Research Center
Bodhisatwa SADHU
  IBM Thomas J. Watson Research Center
Yo YAMAGUCHI
  Fujikura Ltd.
Ning GUAN
  Fujikura Ltd.

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