There are enlarged requirements of millimeter-wave beamforming phased-array transceivers and high-order modulation multi-input multi-output (MIMO) transceivers. High-performance integrated RF switches are regarded as one of the most critical components for those transceivers to support signal channel distribution and path redundancy. This paper introduces a CMOS high-isolation and low-loss RF switch with a novel switched parallel LC resonance network. The proposed single-pole double-throw (SPDT) RF switch realizes 68dB port isolation and 1.0dB insertion loss with an active area of 0.034mm2. The SPDT RF switch is composed of two series-shunt transistor pairs with body-floating technology and a switched parallel LC network. The network uses a turned-off series transistor to resonate out off-capacitance Coff. The measured output third-order intercept (OIP3) is higher than 21dBm. The proposed SPDT RF switch maintains return losses of all working ports less than 10dB from 8GHz to 20GHz. The high-performance SPDT RF switch is fabricated in standard 65-nm CMOS technology.

This paper presents a high-resolution and low-insertion-loss CMOS hybrid phase shifter with a nonuniform matching technique for satellite communication (SATCOM). The proposed hybrid phase shifter includes three 45° coarse phase-shifting stages and one 45° fine phase-tuning stage. The coarse stages are realized by bridged-T switch-type phase shifters (STPS) with 45° phase steps. The fine-tuning stage is based on a reflective-type phase shifter (RTPS) with two identical LC load tanks for phase tuning. A 0.8° phase resolution is realized by this work to support fine beam steering for the SATCOM. To further reduce the chain insertion loss, a nonuniform matching technique is utilized at the coarse stages. For the coarse and fine stages, the measured RMS gain errors at 29GHz are 0.7dB and 0.3dB, respectively. The measured RMS phase errors are 0.8° and 0.4°, respectively. The proposed hybrid phase shifter maintains return losses of all phase states less than -12dB from 24GHz to 34GHz. The presented hybrid phase shifter is fabricated in a standard 65-nm CMOS technology with a 0.14mm2 active area.