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[Author] Jian PANG(7hit)

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  • A Compact TF-Based LC-VCO with Ultra-Low-Power Operation and Supply Pushing Reduction for IoT Applications

    Zheng SUN  Dingxin XU  Hongye HUANG  Zheng LI  Hanli LIU  Bangan LIU  Jian PANG  Teruki SOMEYA  Atsushi SHIRANE  Kenichi OKADA  

     
    PAPER-Electronic Circuits

      Pubricized:
    2020/04/15
      Vol:
    E103-C No:10
      Page(s):
    505-513

    This paper presents a miniaturized transformer-based ultra-low-power (ULP) LC-VCO with embedded supply pushing reduction techniques for IoT applications in 65-nm CMOS process. To reduce the on-chip area, a compact transformer patterned ground shield (PGS) is implemented. The transistors with switchable capacitor banks and associated components are placed underneath the transformer, which further shrinking the on-chip area. To lower the power consumption of VCO, a gm-stacked LC-VCO using the transformer embedded with PGS is proposed. The transformer is designed to provide large inductance to obtain a robust start-up within limited power consumption. Avoiding implementing an off/on-chip Low-dropout regulator (LDO) which requires additional voltage headroom, a low-power supply pushing reduction feedback loop is integrated to mitigate the current variation and thus the oscillation amplitude and frequency can be stabilized. The proposed ULP TF-based LC-VCO achieves phase noise of -114.8dBc/Hz at 1MHz frequency offset and 16kHz flicker corner with a 103µW power consumption at 2.6GHz oscillation frequency, which corresponds to a -193dBc/Hz VCO figure-of-merit (FoM) and only occupies 0.12mm2 on-chip area. The supply pushing is reduced to 2MHz/V resulting in a -50dBc spur, while 5MHz sinusoidal ripples with 50mVPP are added on the DC supply.

  • A Compact and High-Resolution CMOS Switch-Type Phase Shifter Achieving 0.4-dB RMS Gain Error for 5G n260 Band

    Jian PANG  Xueting LUO  Zheng LI  Atsushi SHIRANE  Kenichi OKADA  

     
    PAPER-Microwaves, Millimeter-Waves

      Pubricized:
    2021/08/31
      Vol:
    E105-C No:3
      Page(s):
    102-109

    This paper introduces a high-resolution and compact CMOS switch-type phase shifter (STPS) for the 5th generation mobile network (5G) n260 band. In this work, totally four coarse phase shifting stages and a high-resolution tuning stage are included. The coarse stages based on the bridged-T topology is capable of providing 202.5° phase coverage with a 22.5° tuning step. To further improve the phase shifting resolution, a compact fine-tuning stage covering 23° is also integrated with the coarse stages. Sub-degree phase shifting resolution is realized for supporting the fine beam-steering and high-accuracy phase calibration in the 5G new radio. Simplified phase control algorithm and suppressed insertion loss can also be maintained by the proposed fine-tuning stage. In the measurement, the achieved RMS gain errors at 39 GHz are 0.1 dB and 0.4 dB for the coarse stages and fine stage, respectively. The achieved RMS phase errors at 39 GHz are 3.1° for the coarse stages and 0.1° for the fine stage. Within 37 GHz to 40 GHz, the measured return loss within all phase-tuning states is always better than -14 dB. The proposed phase shifter consumes a core area of only 0.12mm2 with 65-nm CMOS process, which is area-efficient.

  • A Low-Jitter Injection-Locked Clock Multiplier Using 97-µW Transformer-Based VCO with 18-kHz Flicker Noise Corner Open Access

    Zheng SUN  Hanli LIU  Dingxin XU  Hongye HUANG  Bangan LIU  Zheng LI  Jian PANG  Teruki SOMEYA  Atsushi SHIRANE  Kenichi OKADA  

     
    PAPER

      Pubricized:
    2021/01/08
      Vol:
    E104-C No:7
      Page(s):
    289-299

    This paper presents a high jitter performance injection-locked clock multiplier (ILCM) using an ultra-low power (ULP) voltage-controlled oscillator (VCO) for IoT application in 65-nm CMOS. The proposed transformer-based VCO achieves low flicker noise corner and sub-100µW power consumption. Double cross-coupled NMOS transistors sharing the same current provide high transconductance. The network using high-Q factor transformer (TF) provides a large tank impedance to minimize the current requirement. Thanks to the low current bias with a small conduction angle in the ULP VCO design, the proposed TF-based VCO's flicker noise can be suppressed, and a good PN can be achieved in flicker region (1/f3) with sub-100µW power consumption. Thus, a high figure-of-merit (FoM) can be obtained at both 100kHz and 1MHz without additional inductor. The proposed VCO achieves phase noise of -94.5/-115.3dBc/Hz at 100kHz/1MHz frequency offset with a 97µW power consumption, which corresponds to a -193/-194dBc/Hz VCO FoM at 2.62GHz oscillation frequency. The measurement results show that the 1/f3 corner is below 60kHz over the tuning range from 2.57GHz to 3.40GHz. Thanks to the proposed low power VCO, the total ILCM achieves 78 fs RMS jitter while using a high reference clock. A 960 fs RMS jitter can be achieved with a 40MHz common reference and 107µW corresponding power.

  • A 28GHz High-Accuracy Phase and Amplitude Detection Circuit for Dual-Polarized Phased-Array Calibration Open Access

    Yudai YAMAZAKI  Joshua ALVIN  Jian PANG  Atsushi SHIRANE  Kenichi OKADA  

     
    PAPER-Electronic Circuits

      Pubricized:
    2022/10/13
      Vol:
    E106-C No:4
      Page(s):
    149-156

    This article presents a 28GHz high-accuracy phase and amplitude detection circuit for dual-polarized phased-array calibration. With dual-polarized calibration scheme, external LO signal is not required for calibration. The proposed detection circuit detects phase and amplitude independently, using PDC and ADC. By utilizing a 28GHz-to-140kHz downconversion scheme, the phase and amplitude are detected more accurately. In addition, reference signal for PDC and ADC is generated from 28GHz LO signal with divide-by-6 dual-step-mixing injection locked frequency divider (ILFD). This ILFD achieves 24.5-32.5GHz (28%) locking range with only 3.0mW power consumption and 0.01mm2 area. In the measurement, the detection circuit achieves phase and amplitude detections with RMS errors of 0.17degree and 0.12dB, respectively. The total power consumption of the proposed circuit is 59mW with 1-V supply voltage.

  • A 28-GHz CMOS Vector-Summing Phase Shifter Featuring I/Q Imbalance Calibration Supporting 11.2Gb/s in 256QAM for 5G New Radio

    Jian PANG  Ryo KUBOZOE  Zheng LI  Masaru KAWABUCHI  Atsushi SHIRANE  Kenichi OKADA  

     
    PAPER-Electronic Circuits

      Pubricized:
    2019/08/19
      Vol:
    E103-C No:2
      Page(s):
    39-47

    Regarding the enlarged array size for the 5G new radio (NR) millimeter-wave phased-array transceivers, an improved phase tuning resolution will be required to support the accurate beam control. This paper introduces a CMOS implementation of an active vector-summing phase shifter. The proposed phase shifter realizes a 6-bit phase shifting with an active area of 0.32mm2. To minimize the gain variation during the phase tuning, a gain error compensation technique is proposed. After the compensation, the measured gain variation within the 5G NR band n257 is less than 0.9dB. The corresponding RMS gain error is less than 0.2dB. The measured RMS phase error from 26.5GHz to 29.5GHz is less than 1.2°. Gain-invariant, high-resolution phase tuning is realized by this work. Considering the error vector magnitude (EVM) performance, the proposed phase shifter supports a maximum data rate of 11.2Gb/s in 256QAM with a power consumption of 25.2mW.

  • A Low-Power Pulse-Shaped Duobinary ASK Modulator for IEEE 802.11ad Compliant 60GHz Transmitter in 65nm CMOS

    Bangan LIU  Yun WANG  Jian PANG  Haosheng ZHANG  Dongsheng YANG  Aravind Tharayil NARAYANAN  Dae Young LEE  Sung Tae CHOI  Rui WU  Kenichi OKADA  Akira MATSUZAWA  

     
    PAPER-Electronic Circuits

      Vol:
    E101-C No:2
      Page(s):
    126-134

    An energy efficient modulator for an ultra-low-power (ULP) 60-GHz IEEE transmitter is presented in this paper. The modulator consists of a differential duobinary coder and a semi-digital finite-impulse-response (FIR) pulse-shaping filter. By virtue of differential duobinary coding and pulse shaping, the transceiver successfully solves the adjacent-channel-power-ratio (ACPR) issue of conventional on-off-keying (OOK) transceivers. The proposed differential duobinary code adopts an over-sampling precoder, which relaxes timing requirement and reduces power consumption. The semi-digital FIR eliminates the power hungry digital multipliers and accumulators, and improves the power efficiency through optimization of filter parameters. Fabricated in a 65nm CMOS process, this modulator occupies a core area of 0.12mm2. With a throughput of 1.7Gbps/2.6Gbps, power consumption of modulator is 24.3mW/42.8mW respectively, while satisfying the IEEE 802.11ad spectrum mask.

  • An 8.5-dB Insertion Loss and 0.8° RMS Phase Error Ka-Band CMOS Hybrid Phase Shifter Featuring Nonuniform Matching for Satellite Communication

    Xi FU  Yun WANG  Xiaolin WANG  Xiaofan GU  Xueting LUO  Zheng LI  Jian PANG  Atsushi SHIRANE  Kenichi OKADA  

     
    PAPER

      Pubricized:
    2022/04/11
      Vol:
    E105-C No:10
      Page(s):
    552-560

    This paper presents a high-resolution and low-insertion-loss CMOS hybrid phase shifter with a nonuniform matching technique for satellite communication (SATCOM). The proposed hybrid phase shifter includes three 45° coarse phase-shifting stages and one 45° fine phase-tuning stage. The coarse stages are realized by bridged-T switch-type phase shifters (STPS) with 45° phase steps. The fine-tuning stage is based on a reflective-type phase shifter (RTPS) with two identical LC load tanks for phase tuning. A 0.8° phase resolution is realized by this work to support fine beam steering for the SATCOM. To further reduce the chain insertion loss, a nonuniform matching technique is utilized at the coarse stages. For the coarse and fine stages, the measured RMS gain errors at 29GHz are 0.7dB and 0.3dB, respectively. The measured RMS phase errors are 0.8° and 0.4°, respectively. The proposed hybrid phase shifter maintains return losses of all phase states less than -12dB from 24GHz to 34GHz. The presented hybrid phase shifter is fabricated in a standard 65-nm CMOS technology with a 0.14mm2 active area.