This paper presents a miniaturized transformer-based ultra-low-power (ULP) LC-VCO with embedded supply pushing reduction techniques for IoT applications in 65-nm CMOS process. To reduce the on-chip area, a compact transformer patterned ground shield (PGS) is implemented. The transistors with switchable capacitor banks and associated components are placed underneath the transformer, which further shrinking the on-chip area. To lower the power consumption of VCO, a gm-stacked LC-VCO using the transformer embedded with PGS is proposed. The transformer is designed to provide large inductance to obtain a robust start-up within limited power consumption. Avoiding implementing an off/on-chip Low-dropout regulator (LDO) which requires additional voltage headroom, a low-power supply pushing reduction feedback loop is integrated to mitigate the current variation and thus the oscillation amplitude and frequency can be stabilized. The proposed ULP TF-based LC-VCO achieves phase noise of -114.8dBc/Hz at 1MHz frequency offset and 16kHz flicker corner with a 103µW power consumption at 2.6GHz oscillation frequency, which corresponds to a -193dBc/Hz VCO figure-of-merit (FoM) and only occupies 0.12mm2 on-chip area. The supply pushing is reduced to 2MHz/V resulting in a -50dBc spur, while 5MHz sinusoidal ripples with 50mVPP are added on the DC supply.

This paper presents an ultra-low power and temperature-independent voltage detector with a post-fabrication programming method, and presents a theoretical analysis and measurement results. The voltage detector is composed of a programmable voltage detector and a glitch-free voltage detector to realize both programmable and glitch-free operation. The programmable voltage detector enables the programmable detection voltages in the range from 0.52V to 0.85V in steps of less than 49mV. The glitch-free voltage detector enables glitch-free operation when the supply voltage is near 0V. A multiple voltage copier (MVC) in the programmable voltage detector is newly proposed to eliminate the tradeoff between the temperature dependence and power consumption. The design consideration and a theoretical analysis of the MVC are introduced to clarify the relationship between the current in the MVC and the accuracy of the duplication. From the analysis, the tradeoff between the duplication error and the current of MVC is introduced. The proposed voltage detector is fabricated in a 250nm CMOS process. The measurement results show that the power consumption is 248pW and the temperature coefficient is 0.11mV/°C.

This paper presents a high jitter performance injection-locked clock multiplier (ILCM) using an ultra-low power (ULP) voltage-controlled oscillator (VCO) for IoT application in 65-nm CMOS. The proposed transformer-based VCO achieves low flicker noise corner and sub-100µW power consumption. Double cross-coupled NMOS transistors sharing the same current provide high transconductance. The network using high-Q factor transformer (TF) provides a large tank impedance to minimize the current requirement. Thanks to the low current bias with a small conduction angle in the ULP VCO design, the proposed TF-based VCO's flicker noise can be suppressed, and a good PN can be achieved in flicker region (1/f3) with sub-100µW power consumption. Thus, a high figure-of-merit (FoM) can be obtained at both 100kHz and 1MHz without additional inductor. The proposed VCO achieves phase noise of -94.5/-115.3dBc/Hz at 100kHz/1MHz frequency offset with a 97µW power consumption, which corresponds to a -193/-194dBc/Hz VCO FoM at 2.62GHz oscillation frequency. The measurement results show that the 1/f3 corner is below 60kHz over the tuning range from 2.57GHz to 3.40GHz. Thanks to the proposed low power VCO, the total ILCM achieves 78 fs RMS jitter while using a high reference clock. A 960 fs RMS jitter can be achieved with a 40MHz common reference and 107µW corresponding power.

This paper presents a fully integrated yet compact receiver front-end for Sub-GHz applications such as Internet-of-Things (IoT). The low noise amplifier (LNA) matching network leverages an inductance boosting technique. A relatively small on-chip inductor with a compact area achieves impedance matching in such a low frequency. Moreover, a passive-mixer-first mode bypasses the LNA to extend the receiver dynamic-range. The passive mixer provides matching to the 50Ω antenna interface to eliminate the need for additional passive components. Therefore, the receiver can be fully-integrated without any off-chip matching components. The flipped-voltage-follower (FVF) cell is adopted in the low pass filter (LPF) and the variable gain amplifier (VGA) for its high linearity and low power consumption. Fabricated in 65nm LP CMOS process, the proposed receiver front-end occupies 0.37mm2 core area, with a tolerable input power ranging from -91.5dBm to -1dBm for 500kbps GMSK signal at 924MHz frequency. The power consumption is 1mW power under a 1.2V supply.