This paper presents an ultra-low power and temperature-independent voltage detector with a post-fabrication programming method, and presents a theoretical analysis and measurement results. The voltage detector is composed of a programmable voltage detector and a glitch-free voltage detector to realize both programmable and glitch-free operation. The programmable voltage detector enables the programmable detection voltages in the range from 0.52V to 0.85V in steps of less than 49mV. The glitch-free voltage detector enables glitch-free operation when the supply voltage is near 0V. A multiple voltage copier (MVC) in the programmable voltage detector is newly proposed to eliminate the tradeoff between the temperature dependence and power consumption. The design consideration and a theoretical analysis of the MVC are introduced to clarify the relationship between the current in the MVC and the accuracy of the duplication. From the analysis, the tradeoff between the duplication error and the current of MVC is introduced. The proposed voltage detector is fabricated in a 250nm CMOS process. The measurement results show that the power consumption is 248pW and the temperature coefficient is 0.11mV/°C.

Body-biasing is expected to be a common design technique, and then area efficient implementation in layout has been demanded. Body-biasing outside standard cells is one of possible layouts. However in this case body-bias controllability, especially when forward bias is applied, is a concern. To investigate the controllability, we fabricated and measured a ring oscillator in a 90 nm technology. Our measurement result and evaluation of area efficiency reveal that body-biased circuits can be implemented with area overhead of less than 1% yet with sufficient speed controllability.

Timing margin of a chip varies chip by chip due to manufacturing variability, and depends on operating environment and aging. Adaptive speed control with timing error prediction is promising to mitigate the timing margin variation, whereas it inherently has a critical risk of timing error occurrence when a circuit is slowed down. This paper presents how to evaluate the relation between timing error rate and power dissipation in self-adaptive circuits with timing error prediction. The discussion is experimentally validated using adders in subthreshold operation in a 90 nm CMOS process. We show a trade-off between timing error rate and power dissipation, and reveal the dependency of the trade-off on design parameters.