Two essential technologies for a 3D Solid State Drive (3D-SSD) with a boost converter are presented in this paper. The first topic is the spiral inductor design which determines the performance of the boost converter, and the second is the effect of TSV's on the boost converter. These techniques are very important in achieving a 3D-SSD with a boost converter. In the design of the inductor, the on-board inductor from 250 nH to 320 nH is the best design feature that meets all requirements, including high output voltage above 20 V, fast rise time, low energy consumption, and area smaller than 25 mm2. The use of a boost converter with the proposed inductor leads to a reduction of the energy consumption during the write operation of the proposed 1.8-V 3D-SSD by 68% compared with the conventional 3.3-V 3D-SSD with the charge pump. The feasibility of 3D-SSD's with Through Silicon Vias (TSV's) connections is also discussed. In order to maintain the advantages of the boost converter over the charge pump, the reduction of the parasitic resistance of TSV's is very important.

A wireless interface for stacked chips in System-in-a-Package is presented. The interface utilizes inductive coupling between metal inductors. S21 parameters of the inductive coupling are measured between chips stacked in face-up for the first time. Calculations from a theoretical model have good agreement with the measurements. A transceiver circuit for Non-Return-to-Zero signaling is developed to reduce power dissipation. The transceiver is implemented in a test chip fabricated in 0.35 µm CMOS and the chips are stacked in face-up. The chips communicate through the transceiver at 1.2 Gb/s/ch with 46 mW power dissipation at 3.3 V over 300 µm distance. A scaling scenario is derived based on the theoretical model and measurement results. It indicates that, if the communication distance is reduced to 13 µm in 70 nm CMOS, 34 Tbps/mm2 will be obtained.

Special memory and embedded memories used in a newly designed MPEG2 decorder LSI are described. Orthogonal memory, which has a functionality of parallel-to-serial transposition, is employed in a IDCT(Inverse Discrete Cosine Transform) block for small area and low-power. The orthogonal memory realizes the special pupose with 50% of the area and the power compared with using flip-flop array. FIFO's and other dual-port memories are designed by using a single-port RAM operated twice in one clock cycle to reduce cost. Flip-Flop cell is one of the important memory elements in the MPEG environment, and is also improved for the low-cost optimizing functionality for video processing. The area and power of the fabricated MPEG2 decoder chip are reduced by 20% using these techniques. As for testability, direct test mode is implemented for small area. An instruction RAM is placed outside the pad area in parallel to a normal instruction ROM and activated by Al-masterslice for extensive debugging and an early sampling. Other memory related techniques and the key features of the decoder LSI are also described.

In this paper, a 0.18-V input three-stage charge pump circuit applying forward body bias is proposed for energy harvesting applications. In the developed charge pump, all the MOSFETs are forward body biased by using the inter-stage/output voltages. By applying the proposed charge pump as the startup in the boost converter, the kick-up input voltage of the boost converter is reduced to 0.18 V. To verify the circuit characteristics, the conventional zero body bias charge pump and the proposed forward body bias charge pump were fabricated with 65 nm CMOS process. The measured output current of the proposed charge pump under 0.18-V input voltage is increased by 170% comparing to the conventional one at the output voltage of 0.5 V. In addition, the boost converter successfully boosts the 0.18-V input to higher than 0.65-V output.

In this paper, Digital Low Dropout Regulator (LDO) is proposed to provide the low noise and tunable power supply voltage to the 0.5-V near-threshold logic circuits. Because the conventional LDO feedback-controlled by the operational amplifier fail to operate at 0.5 V, the digital LDO eliminates all analog circuits and is controlled by digital circuits, which enables the 0.5-V operation. The developed digital LDO in 65 nm CMOS achieved the 0.5-V input voltage and 0.45-V output voltage with 98.7% current efficiency and 2.7-µA quiescent current at 200-µA load current. Both the input voltage and the quiescent current are the lowest values in the published LDO's, which indicates the good energy efficiency of the digital LDO at 0.5-V operation.

Dependence of within-die delay variations on power supply voltage (VDD) is measured down to 0.4 V. The VDD dependence of the within-die delay variation of manual layout and irregular auto place and route (P&R) layout are compared for the first time. The measured relative delay (=sigma/average) variation difference between the manual layout and the P&R layout decreases from 1.56% to 0.07% with reducing VDD from 1.2 V to 0.4 V, because the random delay variations due to the random transistor variations dominate total delay variations instead of the delay variations due to interconnect length variations at low VDD.

An on-chip power supply noise canceller with higher voltage supply and switching transistor is proposed and the effectiveness of the canceller is experimentally verified. The noise canceller is effective for nano-second order noise caused by circuit wakeup or step increase of frequency in frequency hopping. The principle of the noise canceller is to reduce the current flowing through the supply line of VDD by injecting additional current from the higher voltage supply, so that the voltage drop across the VDD supply line is reduced. As additional current flow from higher supply, switching transistor has to be turned off not to increase the power consumption. With turn-off time of 2L/R, this current can be turned off without inducting another droop due to the increase of current flowing through the power supply line. The measurement shows the canceller reduces 68% of the noise with load circuit equivalent to 530 k logic gates in 90-nm CMOS with 9% wire overhead, 1.5% area overhead, and 3% power overhead at 50 k wake-ups/s. Compared to passive noise reduction, proposed noise canceller reduces power supply noise by 64% without wire overhead and to achieve same noise reduction with passive method, 77 times more C or 45 times less L is required. Too large switching transistor results in saturated noise reduction effect and higher power consumption. A rule-of-thumb is to set the on-resistance to supply 100% of load current when turned-on.

A 315 MHz power-gated ultra low power transceiver for wireless sensor network is developed in 40 nm CMOS. The developed transceiver features an injection-locked frequency multiplier for carrier generation and a power-gated low noise amplifier with current second-reuse technique for receiver front-end. The injection-locked frequency multiplier implements frequency multiplication by edge-combining and thereby achieves 11 µW power consumption at 315 MHz. The proposed low noise amplifier achieves the lowest power consumption of 8.4 µW with 7.9 dB noise figure and 20.5 dB gain in state-of-the-art designs.

This paper presents an ultra-low power and temperature-independent voltage detector with a post-fabrication programming method, and presents a theoretical analysis and measurement results. The voltage detector is composed of a programmable voltage detector and a glitch-free voltage detector to realize both programmable and glitch-free operation. The programmable voltage detector enables the programmable detection voltages in the range from 0.52V to 0.85V in steps of less than 49mV. The glitch-free voltage detector enables glitch-free operation when the supply voltage is near 0V. A multiple voltage copier (MVC) in the programmable voltage detector is newly proposed to eliminate the tradeoff between the temperature dependence and power consumption. The design consideration and a theoretical analysis of the MVC are introduced to clarify the relationship between the current in the MVC and the accuracy of the duplication. From the analysis, the tradeoff between the duplication error and the current of MVC is introduced. The proposed voltage detector is fabricated in a 250nm CMOS process. The measurement results show that the power consumption is 248pW and the temperature coefficient is 0.11mV/°C.

The paper covers techniques to cope with ever-increasing leakage power as well as dynamic power of CMOS VLSI's. The techniques to be presented range from software, system, circuit to device level. The novel trend is to look into the cooperative approaches between disciplines such as software-circuit cooperation and circuit-technology cooperation. The biggest challenge that System-on-a-Chip designers should meet in the future is the fact that transistors go more and more leaky in digital and memory circuits as generation advances. The topics to break through this stringent problem are described. Approaches to lower power at the system level are also discussed. The paper touches on new applications and markets which will be open up by the low-power VLSI's.

A new Row-by-Row Dynamic Source-Line Voltage Control (RRDSV) scheme is proposed to suppress leakage current by two orders of magnitude in the SRAM's for sub-70 nm process technology with sub-1-V VDD. This two-order leakage reduction is caused from the cooperation of reverse body-to-source biasing and Drain Induced Barrier Lowering (DIBL) effects. In addition, metal shields are proposed to be inserted between the cell nodes and the bit lines not to allow the cell nodes to be flipped by the external bit-line coupling noise in this paper. A test chip has been fabricated to verify the effectiveness of the RRDSV scheme with the metal shields by using 0.18-µm CMOS process. The retention voltages of SRAM's with the metal shields are measured to be improved by as much as 40-60 mV without losing the stored data compared to the SRAM's without the shields.

We report an SRAM with a 90% reduction of active-leakage power achieved by controlling the supply voltage. In our design, the supply voltage of a selected row in the SRAM goes up to 1 V, while that in other memory cells that are not selected is kept at 0.3 V. This suppresses active leakage because of the drain-induced barrier lowering (DIBL) effect. To avoid unexpected flips in the memory cells, the wordline voltage is controlled so that it is always lower than the supply voltage in the proposed SRAM, with a self-alignment timing generator. The additional area overhead of the timing generator is 3.5%.

This paper describes a Variable Threshold-voltage CMOS technology (VTCMOS) which controls the threshold voltage (VTH) by means of substrate bias control. Circuit techniques to combine a switch circuit for an active mode and a pump circuit for a standby mode are presented. Design considerations, such as latch-up immunity and upper limit of reverse substrate bias, are discussed. Experimental results obtained from chips fabricated in a 0.3 µm VTCMOS technology are reported. VTH controllability including temperature dependence and influence on short channel effect, power penalty caused by the control circuit, substrate current dependence at low VTH, and substrate noise influence on circuit performance are investigated. A scaling theory is also presented for use in the discussion of future possibilities and problems involved in this technology.

A 4-way set associative TagRAM with 1.189-Mb capacity has been developed which can handle a secondary cache system of up to 16 Mbytes. A 9-ns cycle operation and clock to Dout of 4.7 ns are achieved by use of circuit techniques such as a pipelined decoding scheme, a single PMOS load BiCMOS main decoder, a BiCMOS sense-amplifying comparator, doubly placed self-timed write circuits, and highly linear VCO for a PLL. The device is successfully implemented with 0.7-µm double polysilicon double-metal BiCMOS technology.

Closed-form expressions for a crosstalk noise amplitude and worst-case delay in capacitively coupled two-line and three-line systems are derived assuming bus lines and other signal lines in a VLSI. Two modes are studied; a case that adjacent lines are driven from the same direction, and the other case that adjacent lines are driven from the opposite direction. Beside, a junction capacitance of a driver MOSFET is considered. The closed-form expressions are useful for circuit designers in an early stage of a VLSI design to give insight to interconnection problems. The expressions are extensively compared and fitted to SPICE simulations. The relative and absolute errors in the crosstalk noise amplitude are within 63.8% and 0.098 E (where E is a supply voltage), respectively. The relative error in the worst-case delay is less than 8.1%.

A simple analytical model based on Delayed Quadratic (DQ) Transfer Function approximation is proposed for estimating waveforms of inductive single-line interconnects in VLSI's. An expression for overshoot voltage is derived by the model within 17% error for the line width less than 10 times the minimum line width and typical input signal. A delay expression is also proposed within 15% for the same condition. The strength of the inductive effect is shown to be expressed by a closed-form expression, A=2(L(CT+0.5C))1/2/(RT(CT+CJ)+RTC+RCT+0.4RC). By using the criteria, a scaling trend of inductive effects in VLSI's is discussed. It is shown that the inductive effect of single-line, minimum-width VLSI interconnect peaks off at 90 nm based on the ITRS predicted parameters.

An LSI has been fabricated and measured to demonstrate feasibility of VDD-hopping scheme in an embedded system level by executing MPEG4 CODEC. In the VDD-hopping, supply voltage of a processor is dynamically controlled by a hardware-software cooperative mechanism depending on workload of the processor. When the workload is about a half, the VDD-hopping is shown to reduce power to less than a quarter compared to the conventional fixed-VDD scheme. The power saving is achieved without degrading real-time features of MPEG4 CODEC.

This paper surveys low-power circuit techniques for CMOS ULSIs. For many years a power supply voltage of 5 V was employed. During this period power dissipation of CMOS ICs as a whole increased four-fold every three years. It is predicted that by the year 2000 the power dissipation of high-end ICs will exceed the practical limits of ceramic packages, even if the supply voltage can be feasibly reduced. CMOS ULSIs now face a power dissipation crisis. A new philosophy of circuit design is required. The power dissipation can be minimized by reducing: 1) supply voltage, 2) load capacitance, or 3) switching activity. Reducing the supply voltage brings a quadratic improvement in power dissipation. This simple solution, however, comes at a cost in processing speed. We investigate the proposed methods of compensating for the increased delay at low voltage. Reducing the load capacitance is the principal area of interest because it contributes to the improvement of both power dissipation and circuit speed. Pass-transistor logic is attracting attention as it requires fewer transistors and exhibits less stray capacitance than conventional CMOS static cicuits. Variations in its circuit topology as well as a logic synthesis method are presented and studied. A great deal of research effort has been directed towards studying every portion of LSI circuits. The research achievements are categorized in this paper by parameters associated with the source of CMOS power dissipation and power use in a chip.

Future electronic systems can not be built only with System-on-a-Chip (SoC), since many SoC issues have become evident. Relatively low yield due to the larger die size and the huge investment in developing the process to embed different kinds of technologies are some of the issues. Instead, superconnect technology is getting more important as a viable solution in building electronic systems. The superconnect connects separately built and tested chips not by the printed circuit board but rather directly to construct high-performance yet low-cost electronic systems and may use around 10 micron level design rules. System-in-a-Package and stacked chips using interposers are some realization of the superconnect. The superconnect will also be used to mitigate IR-drop problems and RC delay problems in global on-chip interconnect.

Media processors have emerged so that a single LSI can realize multiple multimedia functions, such as graphics, video, audio and telecommunication with effectively shared hardware and flexible software. First, the difference between media processors and general-purpose microprocessors with multimedia extensions is clarified. Features for processes and data in the multimedia applications are summarized and are followed by the multimedia enhancements that the recent general-purpose microprocessors use. The architecture for media processors reflects the further optimized utilization of these features and realizes better price-performance ratio than the general-purpose microprocessors. Finally, the future directions of media processors are estimated, based on the performance, the power dissipation and the die size of the present microprocessors with multimedia extensions and the present media processors. The demand to improve the price-performance ratio for the whole system and to reduce the power consumption makes the media processor evolve into a system processor, which integrates not only the media processor but also the function of a general-purpose microprocessor, various interfaces and DRAMs.