This paper theoretically revisits linear passive two-port systems from the viewpoint of power transfer. Instead of using the conventional S21 magnitude, we propose generalizing the kQ product as a figure of merit for two-port performance evaluation. We explore three examples of power transfer schemes, i.e. inductive, capacitive, and resistive channels. Starting from their voltage-current equations, the kQ formula is analytically derived for each scheme. The resultant formulas look different in appearance but are all physically consistent with ωM/R, which stems from the original definition of kQ product in a primitive transformer. After comprehensively learning from the three examples, we finally extend the theory to a black-box model that represents any kind of power transfer channel. In terms of general two-port Z-parameters, useful mathematical expressions are deduced for the optimum load, input impedance, and maximum power transfer efficiency. We also supplement the theory with helpful graphics that explain how the generalized kQ behaves as a function of the circuit parameters.

In this paper we clarify for the boost and the buck-boost converter that the ripple effect is not ignorable for the frequency response, and reveal that it causes the unexpected characteristics where either the phase lag or the phase lead appears depending on the shape of waveform of the ramp generator in the PWM circuit. Eventually the phase margin for the stability drastically changes depending on the slope direction (normal or reverse) of the sawtooth waveform of the ramp generator even in the same circuit configuration. For the ripple effects we propose the general analysis model and analyze them of the boost and the buck-boost converters. As the result we identify that the ripple effects are caused mainly by the variation of the slope and the average of the ripple, and reveal that the both converters have the asymmetric characteristics for the slope direction of the sawtooth waveform of the ramp generator and there is more advantage for the stability in case of the reverse slope direction than in case of the normal one. It also clarified that the effect of ESR of the output capacitor of the converter on the frequency response is different according to the shape of the sawtooth waveforms. The proposed analysis method is validated by the experiments and simulations.

When intermetal oxide film which contains much water deposited on MOSFET, degradation of hot carrier characteristics is enhanced. This mechanism is considered to be as follows. During the annealing process water is desorbed from the intermetal oxide. The desorbed water reaches the MOSFET and eventually hydrogens terminate silicon dangling bonds in the gate oxide. This paper describes a new approach which uses ESR to analyze this mechanism. The ESR measurement of number of the silicon dangling bonds in undoped polysilicon lying under the intermetal oxide shows that water diffuses from intermetal oxide to MOSFET during the annealing process. The water diffusion is blocked by introduction between the polysilicon and the intermetal oxides of P-SiN layer or CVD SiO2 damaged by implantation.