We describe the design, fabrication, and characteristics of FDM/WDM coupler deposited by TEOS-O3 based APCVD method on silicon substrates. Due to drastically reduced birefringence by APCVD process, completely polarization independent narrow band (100 GHz) Mach-Zehnder type FDM coupler was obtained. We also fabricated 1.3/1.55 µm directional coupler type WDM coupler with very low insertion loss.