Thin films of a divinyl derivative of tetraphenyldiaminobiphenyl DvTPD were prepared by vapor deposition followed by annealing. After annealing at 200°C for 1 h, the film became practically insoluble to organic solvents due to polymerization. Electrical characteristics of the films were measured by current-voltage measurement, time-of-flight measurement, and dielectric measurement. It was found that the hole mobility of DvTPD decreases when the film is polymerized. As a consequence of the decrease of hole mobility, carrier balance in the emissive layer of an organic light emitting diode (OLED) was improved, leading to a higher quantum efficiency and a pure emission spectrum. The dielectric measurement also confirmed the high thermal stability of the polymerized film.

Organic light emitting diodes (OLEDs) containing nanostructured cathode buffer layers were fabricated, and their electrical and emitting properties were investigated. The OLEDs have an ITO anode/CuPc/TPD/Alq3/buffer layer/Al cathode structure with the buffer layers made from nanostructured alternating layers Alq3 and Al. The driving voltage and the efficiency of the devices were improved by insertion of the buffer layer. It was estimated that some modulations of the Schottky barrier at the Alq3 and the Al cathode interface were induced due to the insertion of the buffer layer and it caused an enhancement of electron injection from the Al cathode.

We investigated the electrical properties of hole transport materials such as TPD, α-NPD and m-MTDATA using in-situ field effect measurement. TPD, α-NPD and m-MTDATA films showed p-type semiconducting properties, and their electrical parameters such as conductivity, carrier mobility and carrier concentration were obtained. We also examined the effect of the substrate temperature during vacuum deposition and the thermal treatment after deposition, on the electrical parameters of the films. Experimental results showed that conductivity and carrier mobility decreased as the substrate temperature increased over the glass transition temperature. These decreases in conductivity and carrier mobility as a result of thermal treatment appear to be strongly related to the degradation mechanism of organic electroluminescent devices.

In this paper, the efficiency of transferring non-realtime data over Wireless ATM (WATM) networks is studied. Non-realtime services are sensitive to bit error as well as cell loss. The loss or error of a single cell due to congestion or a line error will result in the retransmission of the entire protocol data unit (PDU) by the end user in ATM networks. In WATM, cells are subject to the influences of noise. In this paper, we propose an adaptive cell checking controller (ACCC) for WATM networks to early find out error PDUs and to drop all remaining cells of these frames. The proposed ACCC only needs several bits overhead for each PDU of size of several Kilobytes. The removable percentage of an erroneous PDU by ACCC is analyzed. Simulation results show that compared with a conventional early packet drop mechanism, the proposed ACCC can achieve superior network utilization while keeping the minimum overhead in WATM networks.

High performances of CMOS/SOI inverter by simulations of analytical model, reducing the poly-Si gate thickness (tm), and experiments are verified and proposed. It is shown that the tm and gate oxide thickness(tox) are correlated to gate fringing capacitance, which largely influences on the Propagation Delay Time(TPD). Contributions of gate fringing capacitance to CMOS/SIMOX inverter time delay in deep submicrometer gate devices are propounded. Measurements of the fifty-one stage ring oscillator's TPDs are completed for comparison with analytical model. Simulation results by the analytical model, including Time-Dependent Gate Capacitance (TDGC) model, agree well with the experimental results at the same conditions. Simulation results are also predicted that SOI technology is promising for speed enhancement by reducing the poly-Si gate thickness, while the tox remains constant. It is concluded that the TPDs by reducing the tm to zero are improved up to about two times faster than typically fabricated ring oscillator at 350 nm of the tm in deep-submicrometer gate CMOS/SIMOX inverters at room temperature.