IEICE TRANSACTIONS on Electronics
Electrical Characterization of Hole Transport Materials Using In-situ Field Effect Measurement
Summary :
We investigated the electrical properties of hole transport materials such as TPD, α-NPD and m-MTDATA using in-situ field effect measurement. TPD, α-NPD and m-MTDATA films showed p-type semiconducting properties, and their electrical parameters such as conductivity, carrier mobility and carrier concentration were obtained. We also examined the effect of the substrate temperature during vacuum deposition and the thermal treatment after deposition, on the electrical parameters of the films. Experimental results showed that conductivity and carrier mobility decreased as the substrate temperature increased over the glass transition temperature. These decreases in conductivity and carrier mobility as a result of thermal treatment appear to be strongly related to the degradation mechanism of organic electroluminescent devices.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E85-C No.6 pp.1311-1316
- Publication Date
- 2002/06/01
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on Recent Progress in Organic Molecular Electronics)
- Category
- Fabrication and Characterization of Thin Films
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Masaaki IIZUKA, Masakazu NAKAMURA, Kazuhiro KUDO, Kuniaki TANAKA, "Electrical Characterization of Hole Transport Materials Using In-situ Field Effect Measurement" in IEICE TRANSACTIONS on Electronics,
vol. E85-C, no. 6, pp. 1311-1316, June 2002, doi: .
Abstract: We investigated the electrical properties of hole transport materials such as TPD, α-NPD and m-MTDATA using in-situ field effect measurement. TPD, α-NPD and m-MTDATA films showed p-type semiconducting properties, and their electrical parameters such as conductivity, carrier mobility and carrier concentration were obtained. We also examined the effect of the substrate temperature during vacuum deposition and the thermal treatment after deposition, on the electrical parameters of the films. Experimental results showed that conductivity and carrier mobility decreased as the substrate temperature increased over the glass transition temperature. These decreases in conductivity and carrier mobility as a result of thermal treatment appear to be strongly related to the degradation mechanism of organic electroluminescent devices.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e85-c_6_1311/_p
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@ARTICLE{e85-c_6_1311,
author={Masaaki IIZUKA, Masakazu NAKAMURA, Kazuhiro KUDO, Kuniaki TANAKA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Electrical Characterization of Hole Transport Materials Using In-situ Field Effect Measurement},
year={2002},
volume={E85-C},
number={6},
pages={1311-1316},
abstract={We investigated the electrical properties of hole transport materials such as TPD, α-NPD and m-MTDATA using in-situ field effect measurement. TPD, α-NPD and m-MTDATA films showed p-type semiconducting properties, and their electrical parameters such as conductivity, carrier mobility and carrier concentration were obtained. We also examined the effect of the substrate temperature during vacuum deposition and the thermal treatment after deposition, on the electrical parameters of the films. Experimental results showed that conductivity and carrier mobility decreased as the substrate temperature increased over the glass transition temperature. These decreases in conductivity and carrier mobility as a result of thermal treatment appear to be strongly related to the degradation mechanism of organic electroluminescent devices.},
keywords={},
doi={},
ISSN={},
month={June},}
Copy
TY - JOUR
TI - Electrical Characterization of Hole Transport Materials Using In-situ Field Effect Measurement
T2 - IEICE TRANSACTIONS on Electronics
SP - 1311
EP - 1316
AU - Masaaki IIZUKA
AU - Masakazu NAKAMURA
AU - Kazuhiro KUDO
AU - Kuniaki TANAKA
PY - 2002
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E85-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 2002
AB - We investigated the electrical properties of hole transport materials such as TPD, α-NPD and m-MTDATA using in-situ field effect measurement. TPD, α-NPD and m-MTDATA films showed p-type semiconducting properties, and their electrical parameters such as conductivity, carrier mobility and carrier concentration were obtained. We also examined the effect of the substrate temperature during vacuum deposition and the thermal treatment after deposition, on the electrical parameters of the films. Experimental results showed that conductivity and carrier mobility decreased as the substrate temperature increased over the glass transition temperature. These decreases in conductivity and carrier mobility as a result of thermal treatment appear to be strongly related to the degradation mechanism of organic electroluminescent devices.
ER -
English
