An experimental report was presented on a high temperature performance of a ZrN barrier in the model system of W/ZrN/poly-Si as a poly-metal gate electrode configuration. The absence of interdiffusion, reaction and/or mixing of the ZrN barrier with adjoining W and poly-Si layers resulted in a successful demonstration of the thermally stable poly-metal gate electrode configuration which tolerated annealing at 850 for 1 h.

The authors have studied the demagnetization phenomenon which is observed in a conventional CoCrTa/CoZrNb double-layered (DL) perpendicular recording medium. The authors have also investigated the effects of an in-plane hard magnetic layer in a triple-layered (TL) perpendicular recording medium. The in-plane hard magnetic underlayer is made of CoSm or CoCrTa/Cr and is laid under the CoZrNb soft magnetic layer. In the DL medium, a demagnetization phenomenon i.e. decrease of the readback signal, is observed when the CoCrTa layer has a strong perpendicular orientation and the CoZrNb underlayer has a low coercivity. The amount of the signal decrease depends strongly on the accumulated disk revolutions. This demagnetization is considered to be caused by fact that the recorded magnetization in the CoCrTa layer is reduced by the magnetic field generated from the domain walls in the CoZrNb layer, since the CoZrNb layer is very sensitive to a magnetic environment such as geo-magnetism and domain walls move as the disk rotates. On the other hand in the TL medium, the hard magnetic layer has an effect of pinning the magnetic domain in the CoZrNb layer, by which the demagnetization problem is successfully prevented. The hard magnetic layer remarkably reduces the domain walls in the CoZrNb layer and contributes to medium noise reduction. Thus the TL medium presents a higher SN ratio than DL medium.