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Thermal Stability of ZrN Barrier in W/ZrN/poly-Si Gate Electrode Configuration

Atsushi NOYA, Mayumi B. TAKEYAMA

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Summary :

An experimental report was presented on a high temperature performance of a ZrN barrier in the model system of W/ZrN/poly-Si as a poly-metal gate electrode configuration. The absence of interdiffusion, reaction and/or mixing of the ZrN barrier with adjoining W and poly-Si layers resulted in a successful demonstration of the thermally stable poly-metal gate electrode configuration which tolerated annealing at 850 for 1 h.

Publication
IEICE TRANSACTIONS on Electronics Vol.E84-C No.5 pp.704-706
Publication Date
2001/05/01
Publicized
Online ISSN
DOI
Type of Manuscript
LETTER
Category
Electronic Materials

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