Thermal Stability of ZrN Barrier in W/ZrN/poly-Si Gate Electrode Configuration

Atsushi NOYA; Mayumi B. TAKEYAMA

Thermal Stability of ZrN Barrier in W/ZrN/poly-Si Gate Electrode Configuration

Atsushi NOYA, Mayumi B. TAKEYAMA

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An experimental report was presented on a high temperature performance of a ZrN barrier in the model system of W/ZrN/poly-Si as a poly-metal gate electrode configuration. The absence of interdiffusion, reaction and/or mixing of the ZrN barrier with adjoining W and poly-Si layers resulted in a successful demonstration of the thermally stable poly-metal gate electrode configuration which tolerated annealing at 850 for 1 h.

Publication: IEICE TRANSACTIONS on Electronics Vol.E84-C No.5 pp.704-706

Publication Date: 2001/05/01

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Type of Manuscript: LETTER

Category: Electronic Materials

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Atsushi NOYA, Mayumi B. TAKEYAMA, "Thermal Stability of ZrN Barrier in W/ZrN/poly-Si Gate Electrode Configuration" in IEICE TRANSACTIONS on Electronics, vol. E84-C, no. 5, pp. 704-706, May 2001, doi: .
Abstract: An experimental report was presented on a high temperature performance of a ZrN barrier in the model system of W/ZrN/poly-Si as a poly-metal gate electrode configuration. The absence of interdiffusion, reaction and/or mixing of the ZrN barrier with adjoining W and poly-Si layers resulted in a successful demonstration of the thermally stable poly-metal gate electrode configuration which tolerated annealing at 850 for 1 h.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e84-c_5_704/_p

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@ARTICLE{e84-c_5_704,
author={Atsushi NOYA, Mayumi B. TAKEYAMA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Thermal Stability of ZrN Barrier in W/ZrN/poly-Si Gate Electrode Configuration},
year={2001},
volume={E84-C},
number={5},
pages={704-706},
abstract={An experimental report was presented on a high temperature performance of a ZrN barrier in the model system of W/ZrN/poly-Si as a poly-metal gate electrode configuration. The absence of interdiffusion, reaction and/or mixing of the ZrN barrier with adjoining W and poly-Si layers resulted in a successful demonstration of the thermally stable poly-metal gate electrode configuration which tolerated annealing at 850 for 1 h.},
keywords={},
doi={},
ISSN={},
month={May},}

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TY - JOUR
TI - Thermal Stability of ZrN Barrier in W/ZrN/poly-Si Gate Electrode Configuration
T2 - IEICE TRANSACTIONS on Electronics
SP - 704
EP - 706
AU - Atsushi NOYA
AU - Mayumi B. TAKEYAMA
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E84-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2001
AB - An experimental report was presented on a high temperature performance of a ZrN barrier in the model system of W/ZrN/poly-Si as a poly-metal gate electrode configuration. The absence of interdiffusion, reaction and/or mixing of the ZrN barrier with adjoining W and poly-Si layers resulted in a successful demonstration of the thermally stable poly-metal gate electrode configuration which tolerated annealing at 850 for 1 h.
ER -