This paper represents a low noise second harmonic oscillator using mutually synchronized Gunn diodes. A multi-layer MIC technology is adopted to reduce the circuit size of the oscillator. The oscillator consists of Gunn diodes, slot line resonators and strip lines. By embedding Gunn diodes in the slot line resonators, a harmonic RF signal can be generated very easily. The strip lines are used for the power combining output circuit. The shape of slot line resonator is square in order to achieve the low phase noise and the suppression of undesired harmonics. The second harmonic oscillator is designed and fabricated in K band. The output power is +8.89 dBm at the design frequency of 18.75 GHz (2f0) with the phase noise of -116.2 dBc/Hz at the offset frequency of 1 MHz. Excellent suppression of the undesired fundamental frequency signal (f0) of -33 dBc is achieved. Also, the circuit size is reduced by three-tenths relative to that of the previously proposed circuit.

This paper represents a novel second harmonic power combining oscillator using mutually synchronized Gunn diodes embedded on slot line resonators. A both-sided MIC technology is adopted in the oscillator. The oscillator consists of Gunn diodes, slot line resonators and microstrip lines. By embedding Gunn diodes on the slot line resonators, the harmonic RF signal can be generated very easily. The microstrip lines are used for the power combining output circuit. This oscillator has advantages such as easy circuit design, simple circuit configuration and miniaturization of the circuit size. The second harmonic oscillator is designed and fabricated in K-Band. The output power is +5.75 dBm at the design frequency of 19.0 GHz (2f0) with the phase noise of -111.7 dBc/Hz at the offset frequency of 1 MHz. Excellent suppression of the undesired fundamental frequency signal (f0) of -39 dBc is achieved.