This paper represents a low noise second harmonic oscillator using mutually synchronized Gunn diodes. A multi-layer MIC technology is adopted to reduce the circuit size of the oscillator. The oscillator consists of Gunn diodes, slot line resonators and strip lines. By embedding Gunn diodes in the slot line resonators, a harmonic RF signal can be generated very easily. The strip lines are used for the power combining output circuit. The shape of slot line resonator is square in order to achieve the low phase noise and the suppression of undesired harmonics. The second harmonic oscillator is designed and fabricated in K band. The output power is +8.89 dBm at the design frequency of 18.75 GHz (2f0) with the phase noise of -116.2 dBc/Hz at the offset frequency of 1 MHz. Excellent suppression of the undesired fundamental frequency signal (f0) of -33 dBc is achieved. Also, the circuit size is reduced by three-tenths relative to that of the previously proposed circuit.
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Kengo KAWASAKI, Takayuki TANAKA, Masayoshi AIKAWA, "Low Noise Second Harmonic Oscillator Using Mutually Synchronized Gunn Diodes" in IEICE TRANSACTIONS on Electronics,
vol. E93-C, no. 9, pp. 1460-1466, September 2010, doi: 10.1587/transele.E93.C.1460.
Abstract: This paper represents a low noise second harmonic oscillator using mutually synchronized Gunn diodes. A multi-layer MIC technology is adopted to reduce the circuit size of the oscillator. The oscillator consists of Gunn diodes, slot line resonators and strip lines. By embedding Gunn diodes in the slot line resonators, a harmonic RF signal can be generated very easily. The strip lines are used for the power combining output circuit. The shape of slot line resonator is square in order to achieve the low phase noise and the suppression of undesired harmonics. The second harmonic oscillator is designed and fabricated in K band. The output power is +8.89 dBm at the design frequency of 18.75 GHz (2f0) with the phase noise of -116.2 dBc/Hz at the offset frequency of 1 MHz. Excellent suppression of the undesired fundamental frequency signal (f0) of -33 dBc is achieved. Also, the circuit size is reduced by three-tenths relative to that of the previously proposed circuit.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E93.C.1460/_p
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@ARTICLE{e93-c_9_1460,
author={Kengo KAWASAKI, Takayuki TANAKA, Masayoshi AIKAWA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Low Noise Second Harmonic Oscillator Using Mutually Synchronized Gunn Diodes},
year={2010},
volume={E93-C},
number={9},
pages={1460-1466},
abstract={This paper represents a low noise second harmonic oscillator using mutually synchronized Gunn diodes. A multi-layer MIC technology is adopted to reduce the circuit size of the oscillator. The oscillator consists of Gunn diodes, slot line resonators and strip lines. By embedding Gunn diodes in the slot line resonators, a harmonic RF signal can be generated very easily. The strip lines are used for the power combining output circuit. The shape of slot line resonator is square in order to achieve the low phase noise and the suppression of undesired harmonics. The second harmonic oscillator is designed and fabricated in K band. The output power is +8.89 dBm at the design frequency of 18.75 GHz (2f0) with the phase noise of -116.2 dBc/Hz at the offset frequency of 1 MHz. Excellent suppression of the undesired fundamental frequency signal (f0) of -33 dBc is achieved. Also, the circuit size is reduced by three-tenths relative to that of the previously proposed circuit.},
keywords={},
doi={10.1587/transele.E93.C.1460},
ISSN={1745-1353},
month={September},}
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TY - JOUR
TI - Low Noise Second Harmonic Oscillator Using Mutually Synchronized Gunn Diodes
T2 - IEICE TRANSACTIONS on Electronics
SP - 1460
EP - 1466
AU - Kengo KAWASAKI
AU - Takayuki TANAKA
AU - Masayoshi AIKAWA
PY - 2010
DO - 10.1587/transele.E93.C.1460
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E93-C
IS - 9
JA - IEICE TRANSACTIONS on Electronics
Y1 - September 2010
AB - This paper represents a low noise second harmonic oscillator using mutually synchronized Gunn diodes. A multi-layer MIC technology is adopted to reduce the circuit size of the oscillator. The oscillator consists of Gunn diodes, slot line resonators and strip lines. By embedding Gunn diodes in the slot line resonators, a harmonic RF signal can be generated very easily. The strip lines are used for the power combining output circuit. The shape of slot line resonator is square in order to achieve the low phase noise and the suppression of undesired harmonics. The second harmonic oscillator is designed and fabricated in K band. The output power is +8.89 dBm at the design frequency of 18.75 GHz (2f0) with the phase noise of -116.2 dBc/Hz at the offset frequency of 1 MHz. Excellent suppression of the undesired fundamental frequency signal (f0) of -33 dBc is achieved. Also, the circuit size is reduced by three-tenths relative to that of the previously proposed circuit.
ER -