We present a technology based on Nb/NbxSi1-x/Nb junctions, with barriers near the metal-insulator transition, for applications in superconducting electronics (SCE) as an alternative to Nb/AlOx/Nb tunnel junctions. Josephson junctions with co-sputtered amorphous Nb-Si barriers can be made with a wide variety of electrical properties: critical current density (Jc), capacitance (C), and normal resistance (Rn) can be reliably selected within wide ranges by choosing both the barrier thickness and Nb concentration. Nonhysteretic Nb/NbxSi1-x/Nb junctions with IcRn products greater than 1 mV, where Ic is the critical current, and Jc values near 100 kA/cm2 have been fabricated and are promising for superconductive digital electronics. These barriers have thicknesses of several nanometers; this improves fabrication reproducibility and junction uniformity, both of which are necessary for complex digital circuits. Recent improvements to our deposition system have allowed us to obtain better uniformity across the wafer.

The segregation of non-magnetic phases such as borosilicate and Cr was investigated by crystallization behavior during the surface and bulk crystallization of Co-based amorphous alloys. The concentration of metalloids (B and Si) determined the extent of grain boundary segregation of borosilicate glass during surface crystallization. During the bulk crystallization of (Co75Cr25)0.8Si5B15 amorphous alloy, solute rejection of Cr resulted in the nucleation of Cr-deficient ferromagnetic crystals and non-magnetic σ-phase was subsequently precipitated along the grain boundary. These results show that crystallization process, i.e. nucleation and growth can be controlled to optimize the microstructure to reduce media noises in Co-based recording media.