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Niobium-Silicide Junction Technology for Superconducting Digital Electronics
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We present a technology based on Nb/NbxSi1-x/Nb junctions, with barriers near the metal-insulator transition, for applications in superconducting electronics (SCE) as an alternative to Nb/AlOx/Nb tunnel junctions. Josephson junctions with co-sputtered amorphous Nb-Si barriers can be made with a wide variety of electrical properties: critical current density (Jc), capacitance (C), and normal resistance (Rn) can be reliably selected within wide ranges by choosing both the barrier thickness and Nb concentration. Nonhysteretic Nb/NbxSi1-x/Nb junctions with IcRn products greater than 1 mV, where Ic is the critical current, and Jc values near 100 kA/cm2 have been fabricated and are promising for superconductive digital electronics. These barriers have thicknesses of several nanometers; this improves fabrication reproducibility and junction uniformity, both of which are necessary for complex digital circuits. Recent improvements to our deposition system have allowed us to obtain better uniformity across the wafer.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E93-C No.4 pp.463-467
- Publication Date
- 2010/04/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E93.C.463
- Type of Manuscript
- Special Section INVITED PAPER (Special Section on Frontiers of Superconductive Electronics)
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David OLAYA, Paul D. DRESSELHAUS, Samuel P. BENZ, "Niobium-Silicide Junction Technology for Superconducting Digital Electronics" in IEICE TRANSACTIONS on Electronics,
vol. E93-C, no. 4, pp. 463-467, April 2010, doi: 10.1587/transele.E93.C.463.
Abstract: We present a technology based on Nb/NbxSi1-x/Nb junctions, with barriers near the metal-insulator transition, for applications in superconducting electronics (SCE) as an alternative to Nb/AlOx/Nb tunnel junctions. Josephson junctions with co-sputtered amorphous Nb-Si barriers can be made with a wide variety of electrical properties: critical current density (Jc), capacitance (C), and normal resistance (Rn) can be reliably selected within wide ranges by choosing both the barrier thickness and Nb concentration. Nonhysteretic Nb/NbxSi1-x/Nb junctions with IcRn products greater than 1 mV, where Ic is the critical current, and Jc values near 100 kA/cm2 have been fabricated and are promising for superconductive digital electronics. These barriers have thicknesses of several nanometers; this improves fabrication reproducibility and junction uniformity, both of which are necessary for complex digital circuits. Recent improvements to our deposition system have allowed us to obtain better uniformity across the wafer.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E93.C.463/_p
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@ARTICLE{e93-c_4_463,
author={David OLAYA, Paul D. DRESSELHAUS, Samuel P. BENZ, },
journal={IEICE TRANSACTIONS on Electronics},
title={Niobium-Silicide Junction Technology for Superconducting Digital Electronics},
year={2010},
volume={E93-C},
number={4},
pages={463-467},
abstract={We present a technology based on Nb/NbxSi1-x/Nb junctions, with barriers near the metal-insulator transition, for applications in superconducting electronics (SCE) as an alternative to Nb/AlOx/Nb tunnel junctions. Josephson junctions with co-sputtered amorphous Nb-Si barriers can be made with a wide variety of electrical properties: critical current density (Jc), capacitance (C), and normal resistance (Rn) can be reliably selected within wide ranges by choosing both the barrier thickness and Nb concentration. Nonhysteretic Nb/NbxSi1-x/Nb junctions with IcRn products greater than 1 mV, where Ic is the critical current, and Jc values near 100 kA/cm2 have been fabricated and are promising for superconductive digital electronics. These barriers have thicknesses of several nanometers; this improves fabrication reproducibility and junction uniformity, both of which are necessary for complex digital circuits. Recent improvements to our deposition system have allowed us to obtain better uniformity across the wafer.},
keywords={},
doi={10.1587/transele.E93.C.463},
ISSN={1745-1353},
month={April},}
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TY - JOUR
TI - Niobium-Silicide Junction Technology for Superconducting Digital Electronics
T2 - IEICE TRANSACTIONS on Electronics
SP - 463
EP - 467
AU - David OLAYA
AU - Paul D. DRESSELHAUS
AU - Samuel P. BENZ
PY - 2010
DO - 10.1587/transele.E93.C.463
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E93-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 2010
AB - We present a technology based on Nb/NbxSi1-x/Nb junctions, with barriers near the metal-insulator transition, for applications in superconducting electronics (SCE) as an alternative to Nb/AlOx/Nb tunnel junctions. Josephson junctions with co-sputtered amorphous Nb-Si barriers can be made with a wide variety of electrical properties: critical current density (Jc), capacitance (C), and normal resistance (Rn) can be reliably selected within wide ranges by choosing both the barrier thickness and Nb concentration. Nonhysteretic Nb/NbxSi1-x/Nb junctions with IcRn products greater than 1 mV, where Ic is the critical current, and Jc values near 100 kA/cm2 have been fabricated and are promising for superconductive digital electronics. These barriers have thicknesses of several nanometers; this improves fabrication reproducibility and junction uniformity, both of which are necessary for complex digital circuits. Recent improvements to our deposition system have allowed us to obtain better uniformity across the wafer.
ER -
English
