1-1hit |
Naoyuki SHIGYO Noritoshi KONISHI Hideki SATAKE
We present a new apparent bandgap narrowing model for semiconductor device simulation. The new model is derived from revised data of previous measurements on the apparent bandgap narrowing by using a corrected intrinsic carrier concentration. The revised values reveal sufficient agreement with our theoretical calculation. The new model is implemented in a triangular mesh device simulator TRIMEDES. Simulated BJT current-voltage and current-temperature characteristics using the proposed model reveal excellent agreement with measurements.