An Improved Bandgap Narrowing Model Based on Corrected Intrinsic Carrier Concentration
Summary :
We present a new apparent bandgap narrowing model for semiconductor device simulation. The new model is derived from revised data of previous measurements on the apparent bandgap narrowing by using a corrected intrinsic carrier concentration. The revised values reveal sufficient agreement with our theoretical calculation. The new model is implemented in a triangular mesh device simulator TRIMEDES. Simulated BJT current-voltage and current-temperature characteristics using the proposed model reveal excellent agreement with measurements.
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- IEICE TRANSACTIONS on Electronics Vol.E75-C No.2 pp.156-160
- Publication Date
- 1992/02/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on Selected Papers from '91 VPAD)
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Naoyuki SHIGYO, Noritoshi KONISHI, Hideki SATAKE, "An Improved Bandgap Narrowing Model Based on Corrected Intrinsic Carrier Concentration" in IEICE TRANSACTIONS on Electronics,
vol. E75-C, no. 2, pp. 156-160, February 1992, doi: .
Abstract: We present a new apparent bandgap narrowing model for semiconductor device simulation. The new model is derived from revised data of previous measurements on the apparent bandgap narrowing by using a corrected intrinsic carrier concentration. The revised values reveal sufficient agreement with our theoretical calculation. The new model is implemented in a triangular mesh device simulator TRIMEDES. Simulated BJT current-voltage and current-temperature characteristics using the proposed model reveal excellent agreement with measurements.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e75-c_2_156/_p
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@ARTICLE{e75-c_2_156,
author={Naoyuki SHIGYO, Noritoshi KONISHI, Hideki SATAKE, },
journal={IEICE TRANSACTIONS on Electronics},
title={An Improved Bandgap Narrowing Model Based on Corrected Intrinsic Carrier Concentration},
year={1992},
volume={E75-C},
number={2},
pages={156-160},
abstract={We present a new apparent bandgap narrowing model for semiconductor device simulation. The new model is derived from revised data of previous measurements on the apparent bandgap narrowing by using a corrected intrinsic carrier concentration. The revised values reveal sufficient agreement with our theoretical calculation. The new model is implemented in a triangular mesh device simulator TRIMEDES. Simulated BJT current-voltage and current-temperature characteristics using the proposed model reveal excellent agreement with measurements.},
keywords={},
doi={},
ISSN={},
month={February},}
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TY - JOUR
TI - An Improved Bandgap Narrowing Model Based on Corrected Intrinsic Carrier Concentration
T2 - IEICE TRANSACTIONS on Electronics
SP - 156
EP - 160
AU - Naoyuki SHIGYO
AU - Noritoshi KONISHI
AU - Hideki SATAKE
PY - 1992
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E75-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 1992
AB - We present a new apparent bandgap narrowing model for semiconductor device simulation. The new model is derived from revised data of previous measurements on the apparent bandgap narrowing by using a corrected intrinsic carrier concentration. The revised values reveal sufficient agreement with our theoretical calculation. The new model is implemented in a triangular mesh device simulator TRIMEDES. Simulated BJT current-voltage and current-temperature characteristics using the proposed model reveal excellent agreement with measurements.
ER -
English
