We investigate the intrinsic current fluctuations in small Si-MOSFETs via the Monte Carlo device simulation. It is demonstrated that the temporal fluctuation of the drain current in Si-MOSFETs attains a significant fraction of the averaged drain current when the device width is scaled down to the deep sub-µm regime. This is caused by the drastic decrease in the number of channel electrons. This finding holds true whenever the device width is reduced to deep sub-µm, regardless of the channel length. Most importantly, current fluctuation is associated with the quasi-equilibrium thermal noise in the heavily-doped source and drain regions, whereas its magnitude with respect to the averaged drain current is directly related to the number of channel electrons underneath the gate.

This paper describes the higher-order moment analysis of superposed Markov jumping processes. A superposed Markov jumping process is defined as a linear superposition of a finite number of piecewise constant real valued stochastic process whose value changes are associated with state transitions in an underlying descrete state continuous time Markov process. Some phenomena are modeled well by the process such as membrane current fluctuations observed at bio-membranes or load fluctuations in electrical power systems. Theoretical formula of the moment function of any order k is derived and the parameter estimation problem utilizing higher-order moment functions is discussed. A new method of estimating the kinetic parameters of membrane current fluctuations is proposed as a possible application.