Increasing Importance of Electronic Thermal Noise in Sub-0.1 µm Si-MOSFETs

Nobuyuki SANO

Increasing Importance of Electronic Thermal Noise in Sub-0.1 µm Si-MOSFETs

Nobuyuki SANO

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We investigate the intrinsic current fluctuations in small Si-MOSFETs via the Monte Carlo device simulation. It is demonstrated that the temporal fluctuation of the drain current in Si-MOSFETs attains a significant fraction of the averaged drain current when the device width is scaled down to the deep sub-µm regime. This is caused by the drastic decrease in the number of channel electrons. This finding holds true whenever the device width is reduced to deep sub-µm, regardless of the channel length. Most importantly, current fluctuation is associated with the quasi-equilibrium thermal noise in the heavily-doped source and drain regions, whereas its magnitude with respect to the averaged drain current is directly related to the number of channel electrons underneath the gate.

Publication: IEICE TRANSACTIONS on Electronics Vol.E83-C No.8 pp.1203-1211

Publication Date: 2000/08/25

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Type of Manuscript: Special Section INVITED PAPER (Special Issue on 1999 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'99))

Category: Device Modeling and Simulation

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Nobuyuki SANO, "Increasing Importance of Electronic Thermal Noise in Sub-0.1 µm Si-MOSFETs" in IEICE TRANSACTIONS on Electronics, vol. E83-C, no. 8, pp. 1203-1211, August 2000, doi: .
Abstract: We investigate the intrinsic current fluctuations in small Si-MOSFETs via the Monte Carlo device simulation. It is demonstrated that the temporal fluctuation of the drain current in Si-MOSFETs attains a significant fraction of the averaged drain current when the device width is scaled down to the deep sub-µm regime. This is caused by the drastic decrease in the number of channel electrons. This finding holds true whenever the device width is reduced to deep sub-µm, regardless of the channel length. Most importantly, current fluctuation is associated with the quasi-equilibrium thermal noise in the heavily-doped source and drain regions, whereas its magnitude with respect to the averaged drain current is directly related to the number of channel electrons underneath the gate.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e83-c_8_1203/_p

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@ARTICLE{e83-c_8_1203,
author={Nobuyuki SANO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Increasing Importance of Electronic Thermal Noise in Sub-0.1 µm Si-MOSFETs},
year={2000},
volume={E83-C},
number={8},
pages={1203-1211},
abstract={We investigate the intrinsic current fluctuations in small Si-MOSFETs via the Monte Carlo device simulation. It is demonstrated that the temporal fluctuation of the drain current in Si-MOSFETs attains a significant fraction of the averaged drain current when the device width is scaled down to the deep sub-µm regime. This is caused by the drastic decrease in the number of channel electrons. This finding holds true whenever the device width is reduced to deep sub-µm, regardless of the channel length. Most importantly, current fluctuation is associated with the quasi-equilibrium thermal noise in the heavily-doped source and drain regions, whereas its magnitude with respect to the averaged drain current is directly related to the number of channel electrons underneath the gate.},
keywords={},
doi={},
ISSN={},
month={August},}

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TY - JOUR
TI - Increasing Importance of Electronic Thermal Noise in Sub-0.1 µm Si-MOSFETs
T2 - IEICE TRANSACTIONS on Electronics
SP - 1203
EP - 1211
AU - Nobuyuki SANO
PY - 2000
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E83-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 2000
AB - We investigate the intrinsic current fluctuations in small Si-MOSFETs via the Monte Carlo device simulation. It is demonstrated that the temporal fluctuation of the drain current in Si-MOSFETs attains a significant fraction of the averaged drain current when the device width is scaled down to the deep sub-µm regime. This is caused by the drastic decrease in the number of channel electrons. This finding holds true whenever the device width is reduced to deep sub-µm, regardless of the channel length. Most importantly, current fluctuation is associated with the quasi-equilibrium thermal noise in the heavily-doped source and drain regions, whereas its magnitude with respect to the averaged drain current is directly related to the number of channel electrons underneath the gate.
ER -