The search functionality is under construction.
The search functionality is under construction.

Increasing Importance of Electronic Thermal Noise in Sub-0.1 µm Si-MOSFETs

Nobuyuki SANO

  • Full Text Views

    0

  • Cite this

Summary :

We investigate the intrinsic current fluctuations in small Si-MOSFETs via the Monte Carlo device simulation. It is demonstrated that the temporal fluctuation of the drain current in Si-MOSFETs attains a significant fraction of the averaged drain current when the device width is scaled down to the deep sub-µm regime. This is caused by the drastic decrease in the number of channel electrons. This finding holds true whenever the device width is reduced to deep sub-µm, regardless of the channel length. Most importantly, current fluctuation is associated with the quasi-equilibrium thermal noise in the heavily-doped source and drain regions, whereas its magnitude with respect to the averaged drain current is directly related to the number of channel electrons underneath the gate.

Publication
IEICE TRANSACTIONS on Electronics Vol.E83-C No.8 pp.1203-1211
Publication Date
2000/08/25
Publicized
Online ISSN
DOI
Type of Manuscript
Special Section INVITED PAPER (Special Issue on 1999 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'99))
Category
Device Modeling and Simulation

Authors

Keyword