Theoretical calculation has been done on the decay time of photoluminescence of Ir(ppy)3 dissolved in tetrahydrofuran and its temperature dependence at 1.2-300 K. Taking into account that the emitting triplet state consists of three zero-field splitting substates and taking into account one-phonon non-radiative transitions among these substates, the rate equations for the populations of these substates have been obtained. Three decay components are derived by solving not only the secular equation but also the rate equations, where the slow decay time shows decrease from 145 to 2 µs with increasing temperature from 1.2 to 300 K. A good agreement has been obtained for the temperature dependence between the calculated slow decay time and the observed one.

Detailed investigations of the microstructural properties of SrGa2S4:Ce3+ thin films grown by deposition from binary vapors (DBV) were carried out by X-ray diffraction analysis (XRD), energy dispersive X-ray diffraction measurements (EDX), electron probe microanalysis (EPMA), and X-ray photoelectron spectroscopy (XPS) depth profiling. The results indicate uniform distribution of the constituent elements in the nearly stoichiometric structure of the thin films. Photoluminescence (PL) data including absorption and luminescence spectra in the temperature range of 10 to 300 K and decay characteristics show that an increase in Ce concentration from 0.2 to 3 mol% is accompanied with a marked increase in both the intensity of activator absorption and decay time, while the emission and excitation bands remain fixed in position. A mechanism involving the concentration-dependent interactions between different centers in the lattice is proposed, which may explain the experimentally observed behavior.