IEICE TRANSACTIONS on Electronics
Microstructural Characterization and Photoluminescence of SrGa2S4:Ce3+ Thin Films Grown by Deposition from Binary Vapors
Summary :
Detailed investigations of the microstructural properties of SrGa2S4:Ce3+ thin films grown by deposition from binary vapors (DBV) were carried out by X-ray diffraction analysis (XRD), energy dispersive X-ray diffraction measurements (EDX), electron probe microanalysis (EPMA), and X-ray photoelectron spectroscopy (XPS) depth profiling. The results indicate uniform distribution of the constituent elements in the nearly stoichiometric structure of the thin films. Photoluminescence (PL) data including absorption and luminescence spectra in the temperature range of 10 to 300 K and decay characteristics show that an increase in Ce concentration from 0.2 to 3 mol% is accompanied with a marked increase in both the intensity of activator absorption and decay time, while the emission and excitation bands remain fixed in position. A mechanism involving the concentration-dependent interactions between different centers in the lattice is proposed, which may explain the experimentally observed behavior.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E80-C No.8 pp.1101-1108
- Publication Date
- 1997/08/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on Advanced Emissive Displays)
- Category
Authors
Keyword
Latest Issue
Copyrights notice of machine-translated contents
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Cite this
Copy
Oleg DJAZOVSKI, Tomohisa MIKAMI, Koutoku OHMI, Shosaku TANAKA, Hiroshi KOBAYASHI, "Microstructural Characterization and Photoluminescence of SrGa2S4:Ce3+ Thin Films Grown by Deposition from Binary Vapors" in IEICE TRANSACTIONS on Electronics,
vol. E80-C, no. 8, pp. 1101-1108, August 1997, doi: .
Abstract: Detailed investigations of the microstructural properties of SrGa2S4:Ce3+ thin films grown by deposition from binary vapors (DBV) were carried out by X-ray diffraction analysis (XRD), energy dispersive X-ray diffraction measurements (EDX), electron probe microanalysis (EPMA), and X-ray photoelectron spectroscopy (XPS) depth profiling. The results indicate uniform distribution of the constituent elements in the nearly stoichiometric structure of the thin films. Photoluminescence (PL) data including absorption and luminescence spectra in the temperature range of 10 to 300 K and decay characteristics show that an increase in Ce concentration from 0.2 to 3 mol% is accompanied with a marked increase in both the intensity of activator absorption and decay time, while the emission and excitation bands remain fixed in position. A mechanism involving the concentration-dependent interactions between different centers in the lattice is proposed, which may explain the experimentally observed behavior.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e80-c_8_1101/_p
Copy
@ARTICLE{e80-c_8_1101,
author={Oleg DJAZOVSKI, Tomohisa MIKAMI, Koutoku OHMI, Shosaku TANAKA, Hiroshi KOBAYASHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Microstructural Characterization and Photoluminescence of SrGa2S4:Ce3+ Thin Films Grown by Deposition from Binary Vapors},
year={1997},
volume={E80-C},
number={8},
pages={1101-1108},
abstract={Detailed investigations of the microstructural properties of SrGa2S4:Ce3+ thin films grown by deposition from binary vapors (DBV) were carried out by X-ray diffraction analysis (XRD), energy dispersive X-ray diffraction measurements (EDX), electron probe microanalysis (EPMA), and X-ray photoelectron spectroscopy (XPS) depth profiling. The results indicate uniform distribution of the constituent elements in the nearly stoichiometric structure of the thin films. Photoluminescence (PL) data including absorption and luminescence spectra in the temperature range of 10 to 300 K and decay characteristics show that an increase in Ce concentration from 0.2 to 3 mol% is accompanied with a marked increase in both the intensity of activator absorption and decay time, while the emission and excitation bands remain fixed in position. A mechanism involving the concentration-dependent interactions between different centers in the lattice is proposed, which may explain the experimentally observed behavior.},
keywords={},
doi={},
ISSN={},
month={August},}
Copy
TY - JOUR
TI - Microstructural Characterization and Photoluminescence of SrGa2S4:Ce3+ Thin Films Grown by Deposition from Binary Vapors
T2 - IEICE TRANSACTIONS on Electronics
SP - 1101
EP - 1108
AU - Oleg DJAZOVSKI
AU - Tomohisa MIKAMI
AU - Koutoku OHMI
AU - Shosaku TANAKA
AU - Hiroshi KOBAYASHI
PY - 1997
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E80-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 1997
AB - Detailed investigations of the microstructural properties of SrGa2S4:Ce3+ thin films grown by deposition from binary vapors (DBV) were carried out by X-ray diffraction analysis (XRD), energy dispersive X-ray diffraction measurements (EDX), electron probe microanalysis (EPMA), and X-ray photoelectron spectroscopy (XPS) depth profiling. The results indicate uniform distribution of the constituent elements in the nearly stoichiometric structure of the thin films. Photoluminescence (PL) data including absorption and luminescence spectra in the temperature range of 10 to 300 K and decay characteristics show that an increase in Ce concentration from 0.2 to 3 mol% is accompanied with a marked increase in both the intensity of activator absorption and decay time, while the emission and excitation bands remain fixed in position. A mechanism involving the concentration-dependent interactions between different centers in the lattice is proposed, which may explain the experimentally observed behavior.
ER -
English
