The CROMACLEAR color display tube has been developed as a display that offers attractive icon quality and highly legible characters. The color display tube is composed of a striped superfine pitch phosphor screen with slot-type shadow mask. We explain the character legibility by Fourier transform. Moreover, the electron beam shape is improved. As a result, the CROMACLEAR color display tube has achieved higher legibility and lower moire phenomenon. This CROMACLEAR color display tube is already mounted in new monitor series.

When moving images are displayed on color PDPs, motional artifacts such as disturbances of gray scales and colors are often observed. Reduction of the disturbances is essential in achieving PDPs with acceptable picture quality for TV use. The moving picture quality has been improved by using a modified-binary-coded light-emission-period scheme and a 3dimensional (2D in space and 1D in time) scattering technique. In the 10-sub-field modified-binary-code scheme for 256 gray level expression, sub-field B (of period equivalent to 64) and C (128) of conventional 8-sub-field binary-coded scheme are added and then re-distributed into four sub-fields D (48). The modifiedbinary-coded scheme therefore has the light-emitting-period ratio 1:2:4:8:16:32:48:48:48:48. The maximum period, 128 of the conventional, is reduced to 48. By using the modified-binary-coded scheme, the motional artifacts are reduced significantly, but still perceptible because they appear in forms of continuous lines. In order to make the disturbance less conspicuous, a 3D scattering technique is introduced. The technique has been made possible because of the redundancies of the modified-binary-coded scheme: namely, (1) the position of sub-field-block A (63) can be placed at one of the five positions among four sub-fields D (48), (2) there are various choices when newly assigning one of the four sub-fields D, (3) one can arbitrarily choose whether or not to assign a new sub-field D between the gray levels 48-63, 96-111, 144-160, and 192-207. By randomly selecting one of these emission patterns, the disturbances change their forms from continuous lines to scattered dots. The randomization can be performed at each horizontal line of the display, at each vertical line, at each pixel, of at each TV field. An appreciable improvement of moving picture quality has been realized without influencing the still image.

The cell structure of surface discharge ACPDPs with a long gap between the sustaining electrodes achieves high luminous efficiency. However, the long gap cell structure causes high firing voltage and thus makes driving more difficult than with the conventional gap cell structure. The rise in firing voltage in the long gap cell structure could not be explained by Paschen's scaling law. We derived a new governing equation for firing voltage, involving the influence of a non-uniform electric field, to investigate this deviation from Paschen's law. From the calculated results we found that changing the gap length corresponds to the change in the degree of distortion of the electric field between the sustaining electrodes.

In order to improve luminance and luminous efficiency of color ac plasma displays (PDPs), absorption characteristics of ultraviolet rays were investigated for dielectric materials from a viewpoint of protecting layer of ac PDPs. The double protecting layer of MgF₂ and MgO is clarified to be excellent property to improve the optical performance of color ac PDPs. The double protecting layer of MgF₂ and MgO was applied to the barrier-rib electrode color ac PDPs and resulted in high luminance and luminous efficiency of 1030 cd/m² and 1.0lm/W, respectively.

The high resolution CRT displays used for computer monitor and high performance TV often produce a pattern of bright and dark stripes on the screen called a moire pattern. The elimination of the moire is an important consideration in the CRT design. In this paper, we propose a method for evaluating a moire pattern based on the measurement data of the electron beam distribution. (1) We describe a mathematical expression of the process whereby a moire pattern is produced. By applying the electron beam measurement data into the formulae, precise value of the period and the contrast of a moire are calculated from the actual data of the electron beam profile and the distribution of apertures of the shadow mask. (2) The visibility of the moire is evaluated by plotting the calculation results on the contrastperiod plane, which consists of visible and invisible moire pattern regions based on experimental results of the psychological tests. (3) In addition to the analysis by calculation, the visibility of moire patterns can be visually examined by simulating moire patterns using the same data as above calculation. Since not only fundamental design parameters such as a shadow mask pitch and a scanning line pitch but also details of an electron beam profile such as a distortion or an asymmetry can be examined, a newly developed method contributes the efficiency of the CRT design.

Detailed investigations of the microstructural properties of SrGa₂S₄:Ce³⁺ thin films grown by deposition from binary vapors (DBV) were carried out by X-ray diffraction analysis (XRD), energy dispersive X-ray diffraction measurements (EDX), electron probe microanalysis (EPMA), and X-ray photoelectron spectroscopy (XPS) depth profiling. The results indicate uniform distribution of the constituent elements in the nearly stoichiometric structure of the thin films. Photoluminescence (PL) data including absorption and luminescence spectra in the temperature range of 10 to 300 K and decay characteristics show that an increase in Ce concentration from 0.2 to 3 mol% is accompanied with a marked increase in both the intensity of activator absorption and decay time, while the emission and excitation bands remain fixed in position. A mechanism involving the concentration-dependent interactions between different centers in the lattice is proposed, which may explain the experimentally observed behavior.

To improve the emission properties of blue-emitting phosphor layer, SrS:Ce, we evaluated CeN instead of conventional CeCl₃ as a starting material. We evaluated the composition and the crystallinity of the thin films using RBS and XRD methods. We also evaluated luminescent properties of EL devices using SrS:Ce phosphor layer. From the results of RBS and XRD measurements, we found that the concentration of the oxygen impurity in SrS:Ce thin films was decreased and the crystallinity of SrS:Ce thin films was improved when CeN is used. These results mean that the degradation of SrS:Ce thin films can be prevented by the use CeN. The evaluation of luminescent properties, shows that the luminance of SrS:Ce EL device is increased by the use of CeN.

Electroluminescent (EL) devices with mixed single layer that consist of fluorescent dyes, distylylbiphenyl derivative (DPVBi) and triphenylamine derivative (TPD), are studied. Blue light emission was observed from the device with DPVBi and TPD. White emission over 2,500 cd/m2 was observed from the devices with mixed single layer of DPVBi, TPD and dicyanomethylene derivative (DCM).

This paper describes a nondestructive measurement method for complex permittivity of dielectric plates at 2 GHz, using a cylindrical cavity resonator. The resonator is divided into two parts at the center. Two dielectric plates are symmetrically loaded around the center of the cavity. These plates have high permittivity of 45. A dielectric plate specimen is clamped with these halves. The values of relative permittivity ε and loss tangent tanδ of the specimen are obtained from the resonant frequency and unloaded Q-value of TE₀₁₁ mode. Measured results of various materials are compared with those values obtained at 3 and 10 GHz by other cavity resonator method. An edge effect is taken into account by a reference method, using measurement data of a sapphire plate. The errors of the present method are smaller than 1% and 2-310^-5 for ε and tanδ, respectively.

A low voltage dual V_T self-timed CMOS logic in which the subthreshold leakage current path is blocked by a large high-V_T MOS is proposed. An active signal at each node of the self-timed circuit resets its own voltage to its standby state after 4 inverter delays. This pulsed nature speeds up the signal propagation and enables the synchronous DRAM to adopt a fast pipelining scheme.